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    Transparent hard coats for optical elements
    1.
    发明授权
    Transparent hard coats for optical elements 失效
    用于光学元件的透明硬涂层

    公开(公告)号：US07695776B2

    公开(公告)日：2010-04-13

    申请号：US12154568

    申请日：2008-05-23

    申请人： Jeffrey Curtis Hedrick ,  David Andrew Lewis ,  Stanley Joseph Whitehair

    发明人： Jeffrey Curtis Hedrick ,  David Andrew Lewis ,  Stanley Joseph Whitehair

    IPC分类号： H05H1/24

    CPC分类号： C23C16/308 ,  Y10S428/911 ,  Y10T428/24975 ,  Y10T428/24983 ,  Y10T428/265

    摘要： The present invention related to an improved structure of an optically transparent element that can be used in optical scanners, supermarket scanners, lenses for eyeglasses, etc. The application of oxynitride PECVD films provide good hardness and optical transparency. Such films displaying these physical properties are extremely useful as a scratch resistant coatings in lenses and systems in which an article contacts a transparent surface, such as in scanners and in environments in which intermittent, environmental contact occurs such as in displays for computers and suchlike and in liquid crystal displays, touch displays and compact disks.

    摘要翻译： 本发明涉及可用于光学扫描仪，超市扫描仪，眼镜镜片等的光学透明元件的改进结构。氮氧化物PECVD膜的应用提供了良好的硬度和光学透明度。 显示这些物理性质的这样的薄膜作为防透光涂料在透镜和系统中是非常有用的，所述透镜和系统中的物品接触透明表面，例如在扫描仪中以及在诸如计算机等的显示器中发生间歇性环境接触的环境中， 在液晶显示器，触摸显示器和光盘中。

    Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics
    2.
    发明授权
    Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics 有权
    低k互连结构由多层旋涂多孔电介质组成

    公开(公告)号：US06716742B2

    公开(公告)日：2004-04-06

    申请号：US10292205

    申请日：2002-11-12

    申请人： Stephen McConnell Gates ,  Jeffrey Curtis Hedrick ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Cristy Sensenich Tyberg

    发明人： Stephen McConnell Gates ,  Jeffrey Curtis Hedrick ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Cristy Sensenich Tyberg

    IPC分类号： H01L214763

    CPC分类号： H01L21/76835 ,  H01L21/76811 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A low-k dielectric metal conductor interconnect structure having no micro-trenches present therein and a method of forming such a structure are provided. Specifically, the above structure is achieved by providing an interconnect structure which includes at least a multilayer of dielectric materials which are applied sequentially in a single spin apply tool and then cured in a single step and a plurality of patterned metal conductors within the multilayer of spun-on dielectrics. The control over the conductor resistance is obtained using a buried etch stop layer having a second atomic composition located between the line and via dielectric layers of porous low-k dielectrics having a first atomic composition. The inventive interconnect structure also includes a hard mask which assists in forming the interconnect structure of the dual damascene-type. The first and second composition are selected to obtain etch selectivity of at least 10 to 1 or higher, and are selected from specific groups of porous low-k organic or inorganic materials with specific atomic compositions and other discoverable quantities.

    摘要翻译： 提供了其中不存在微沟槽的低k电介质金属导体互连结构以及形成这种结构的方法。 具体地说，上述结构是通过提供一种互连结构来实现的，所述互连结构至少包括多层电介质材料，所述多层电介质材料依次应用于单个旋涂工具中，然后在单个步骤中固化，并且多个图案化的金属导体在多层纺丝 - 电介质。 使用具有位于具有第一原子组成的多孔低k电介质的线路和通孔电介质层之间的第二原子组成的掩埋蚀刻停止层来获得对导体电阻的控制。 本发明的互连结构还包括有助于形成双镶嵌型互连结构的硬掩模。 选择第一和第二组合物以获得至少10至1或更高的蚀刻选择性，并且选自具有特定原子组成和其它可发现量的多孔低k有机或无机材料的特定组。

    Transparent hard coats for optical elements
    5.
    发明申请
    Transparent hard coats for optical elements 失效
    用于光学元件的透明硬涂层

    公开(公告)号：US20080286493A1

    公开(公告)日：2008-11-20

    申请号：US12154568

    申请日：2008-05-23

    申请人： Jeffrey Curtis Hedrick ,  David Andrew Lewis ,  Stanley Joseph Whitehair

    发明人： Jeffrey Curtis Hedrick ,  David Andrew Lewis ,  Stanley Joseph Whitehair

    IPC分类号： H05H1/24

    CPC分类号： C23C16/308 ,  Y10S428/911 ,  Y10T428/24975 ,  Y10T428/24983 ,  Y10T428/265

    摘要： The present invention related to an improved structure of an optically transparent element that can be used in optical scanners, supermarket scanners, lenses for eyeglasses, etc. The application of oxynitride PECVD films provide good hardness and optical transparency. Such films displaying these physical properties are extremely useful as a scratch resistant coatings in lenses and systems in which an article contacts a transparent surface, such as in scanners and in environments in which intermitent, environmental contact occurs such as in displays for computers and suchlike and in liquid crystal displays, touch displays and compact disks.

    摘要翻译： 本发明涉及可用于光学扫描仪，超市扫描仪，眼镜镜片等的光学透明元件的改进结构。氮氧化物PECVD膜的应用提供了良好的硬度和光学透明度。 显示这些物理性质的这样的薄膜在透镜和系统中作为防刮涂层是非常有用的，其中物品与透明表面接触，例如在扫描仪中以及在诸如计算机等的显示器中发生间接环境接触的环境中， 在液晶显示器，触摸显示器和光盘中。

    Multilevel interconnect structure containing air gaps and method for making
    6.
    发明授权
    Multilevel interconnect structure containing air gaps and method for making 有权
    包含气隙的多层互连结构和制造方法

    公开(公告)号：US06737725B2

    公开(公告)日：2004-05-18

    申请号：US10144574

    申请日：2002-05-13

    申请人： Alfred Grill ,  Jeffrey Curtis Hedrick ,  Christopher Vincent Jahnes ,  Satyanarayana Venkata Nitta ,  Kevin S. Petrarca ,  Sampath Purushothaman ,  Katherine Lynn Saenger ,  Stanley Joseph Whitehair

    发明人： Alfred Grill ,  Jeffrey Curtis Hedrick ,  Christopher Vincent Jahnes ,  Satyanarayana Venkata Nitta ,  Kevin S. Petrarca ,  Sampath Purushothaman ,  Katherine Lynn Saenger ,  Stanley Joseph Whitehair

    IPC分类号： H01L2900

    CPC分类号： H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76885

    摘要： A method for forming a multilayer interconnect structure on a substrate that include interconnected conductive wiring and vias spaced apart by a combination of solid or gaseous dielectrics. The inventive method includes the steps of: (a) forming a first planar via plus line level pair embedded in a dielectric matrix formed from one or more solid dielectrics and comprising a via level dielectric and a line level dielectric on a substrate, wherein, at least one of said solid dielectrics is at least partially sacrificial; (b) etching back sacrificial portions of said at least partially sacrificial dielectrics are removed to leave cavities extending into and through said via level, while leaving, at least some of the original via level dielectric as a permanent dielectric under said lines; (c) partially filling or overfilling said cavities with a place-holder material which may or may not be sacrificial; (d) planarizing the structure by removing overfill of said place-holder material; (e) repeating, as necessary, steps (a)-(d); (f) forming a dielectric bridge layer over the planar structure; and (g) forming air gaps by at least partially extracting said place-holder material.

    摘要翻译： 一种在衬底上形成多层互连结构的方法，其包括互连的导电布线和通过固体或气体电介质的组合间隔开的通孔。 本发明的方法包括以下步骤：（a）形成嵌入在由一个或多个固体电介质形成的电介质矩阵中并且包括通孔层电介质和衬底上的线路电介质的介电矩阵中的第一平面通孔加线电平对，其中，在 至少一个所述固体电介质至少部分地是牺牲的; （b）蚀刻所述至少部分牺牲电介质的牺牲部分被去除以留下延伸进入并穿过所述通孔级的空腔，同时留下至少一些原始通孔级电介质作为所述线下的永久电介质; （c）用可能牺牲或可能不是牺牲的位置保持材料部分填充或过度填充所述空腔; （d）通过去除所述位置保持器材料的过量填充来平坦化结构; （e）必要时重复步骤（a） - （d）; （f）在所述平面结构上形成电介质桥接层; 和（g）通过至少部分地提取所述放置支架材料形成气隙。

    Interconnect structure with precise conductor resistance and method to form same
    7.
    发明授权
    Interconnect structure with precise conductor resistance and method to form same 有权
    具有精确导体电阻的互连结构和形成相同的方法

    公开(公告)号：US06710450B2

    公开(公告)日：2004-03-23

    申请号：US09795430

    申请日：2001-02-28

    申请人： Stephen McConnell Gates ,  Jeffrey Curtis Hedrick ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Cristy Sensenich Tyberg

    发明人： Stephen McConnell Gates ,  Jeffrey Curtis Hedrick ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Cristy Sensenich Tyberg

    IPC分类号： H01L23532

    CPC分类号： H01L21/76835 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76811 ,  H01L21/7684

    摘要： An interconnect structure including a patterned multilayer of spun-on dielectrics as well as methods for manufacturing the same are provided. The interconnect structure includes a patterned multilayer of spun-on dielectrics formed on a surface of a substrate. The patterned multilayer of spun-on dielectrics is composed of a bottom low-k dielectric, a buried etch stop layer, and a top low-k dielectric, wherein the bottom and top low-k dielectrics have a first composition, the said buried etch stop layer has a second composition which is different from the first composition and the buried etch stop layer is covalently bonded to said top and bottom low-k dielectrics. The interconnect structure further includes a polish stop layer formed on the patterned multilayer of spun-on dielectrics; and metal conductive regions formed within the patterned multilayer of spun-on dielectrics. Covalent bonding is achieved by employing an organosilane having functional groups that are capable of bonding with the top and bottom dielectric layers.

    摘要翻译： 提供了包括旋涂电介质的图案化多层的互连结构及其制造方法。 互连结构包括形成在衬底的表面上的旋涂电介质的图案化多层。 旋涂电介质的图案化多层由底部低k电介质，掩埋蚀刻停止层和顶部低k电介质组成，其中底部和顶部低k电介质具有第一组成，所述掩埋蚀刻 停止层具有与第一组成不同的第二组成，并且掩埋蚀刻停止层共价键合到所述顶部和底部低k电介质。 互连结构还包括形成在旋涂电介质的图案化多层上的抛光停止层; 以及形成在旋涂电介质的图案化多层中的金属导电区域。 通过使用具有能够与顶部和底部电介质层结合的官能团的有机硅烷来实现共价键合。