摘要:
A RF-to-DC converter charges a battery or powers a circuit from the energy of received radio waves. The RF energy received is very small for far-field applications, so the converter is highly sensitive. Four capacitor arrays are arranged in two banks. Buffered RF signals pump bottom plates of the capacitors. A series of L-switches in each bank connect between the two capacitor arrays in that bank. Each L switch has a pre-charge switch that charges that stage's input capacitor, and a stage-transfer switch that shares charge from the input capacitor to an output capacitor for that stage. Switches in the two banks alternately pre-charge and pump, with the left bank pumping while the right bank pre-charges. Switches are transistors with substrates tied to their sources or actively driven by substrate control signals. One bank may use n-channel transistors with the other bank uses p-channel transistors. Gate voltages may be boosted.
摘要:
A Programmable-Gain Amplifier (PGA) has a digital value that programmably adjusts the gain of the analog amplifier. A variable capacitor has several switched sub-capacitors that are enabled by the digital value. Enabled sub-capacitors are switched between a sampled input and a virtual ground on one terminal, and connect to a summing node on the other terminal. The summing node connects to the inverting input of an op amp either through a switch or through a double-sampling capacitor that stores an offset. A feedback capacitor is in parallel with a sampling capacitor during a second clock phase when direct-charge transfer occurs, reducing power consumption of the amplifier. The feedback capacitor samples the sampled input during the first clock phase. The PGA gain is proportional to the sum of capacitances of enabled sub-capacitors. The gain can be adjusted for sensor inputs to an Analog Front-End (AFE), such as for an electro-cardiogram (ECG).
摘要:
An electro-static-discharge (ESD) protection circuit has a vertical NPN transistor with a floating p-type base created by a deep p-type implant under an N+ source region. The deep p-type implant may be an ESD implant in a standard CMOS process. The p-type implant provides a low initial snap-back trigger voltage, but the holding voltage may be too low, creating latch-up problems. The holding voltage is raised by about one volt by connecting the emitter of the vertical NPN transistor to parallel resistor and diode paths. When the vertical NPN transistor is triggered, its current initially flows through the resistor, creating an increasing voltage drop through the resistor as current rises. Once the voltage across the resistor reaches 0.5 volt, the diode in parallel with the resistor becomes forward biased and shunts a higher current than the resistor, raising the holding voltage. A clamp transistor may replace the diode.
摘要:
A bio-sensing processor chip acts as an auto-configurable platform to support a wide variety of bio-sensors. Nano-wires with attached bio-receptors for specific bio-molecules, ECG, and SPO2 bio-sensors drive analog voltages or currents to analog inputs of the bio-sensing processor chip. These analog inputs are divided into three sections. An input sensor detector/decoder detects which analog inputs are active and configures an analog-to-digital converter (ADC) to convert first-section inputs to 12 digital bits, second-section inputs to 16 bits, and third-section inputs to 20 bits. An Analog Front-End (AFE) is bypassed for the first section inputs but amplifies and filters second and third section inputs. A Universal Asynchronous Receiver Transmitter (UART) sends the converted digital values to a nearby external device using NFC or WiFi transmitters. When no battery is detected, energy is harvested from NFC signals from the external device, and one-shot measurements are made.
摘要:
A power converter reduces output ripple without using an electrolytic primary-side capacitor that can reduce product lifetime. Primary-Side Regulation (PSR) using an auxiliary winding provides a regulated secondary voltage with some low-frequency ripple on a secondary winding of a transformer. A smaller secondary capacitor that is not an electrolytic capacitor filters the output of the secondary side. A bang-bang controller controls the secondary side current to reduce current ripple despite voltage ripple. The bang-bang controller has a series resistor and inductor in series with a load such as an LED. A voltage drop across the series resistor increases when a switch turns on. This increasing voltage drop toggles the switch off once an upper limit voltage is reached. The voltage drop then decreases as inductor current is shunted by a diode, until the voltage drop reaches a lower limit voltage and the switch toggles on again.
摘要:
A serial battery charger has a battery matrix with switches that are configured by a microcontroller that reads voltages between batteries to determine if each battery is fully-charged, charging, or absent. A switch configuration allows charging and discharging currents to flow simultaneously, and allows discharging current but blocks charging current from fully-charged batteries to prevent over-charging. The charging current flows through all charging batteries in series while the discharging current flows from all fully-charged and charging batteries in series. Blocking and bypass switches route the charging current to all charging batteries in series, but bypass all fully-charged and absent batteries. The blocking and bypass switches route the discharging current serially through all fully-charged and charging batteries in the battery matrix while avoiding absent batteries. The switches are controlled by the switch configuration from the microcontroller. Larger battery matrixes have row and column lines that are connected by connecting switches.
摘要:
A sine wave generator for a Direct Digital Synthesizer (DDS) converts a digital phase input into a digital sine wave output. Sine values and slopes are stored in read-only memory (ROM) for coarse upper phase bits in a first quadrant. A quadrant folder and phase splitter reflects and inverts values from the first quadrant to generate amplitudes for all four quadrants. Each sine value and slope is stored for a range of lower phase bits. A Delta bit separates upper and lower phase bits. Delta conditionally inverts the lower phase bits, the sine value, and the final polarity. A reduced AND logic array multiplies the slope by the conditionally inverted lower phase bits. A reconstructed ADD logic array then adds the conditionally inverted sine value. The conditionally inverted polarity is added to generate the final sine value. Sine generation logic is streamlined with conditional inversion based on the Delta bit.
摘要:
An envelope detector receives an input that is an Amplitude-Modulated (AM) or Amplitude-Shift-Keying (ASK) coded signal. Each channel has a sample switch and a diode that charge an internal sampling capacitor. A hold switch connects the internal sampling capacitor to a summing output capacitor or to a post-processing circuit. A reset switch discharges the internal sampling capacitor after each sample. Two or more channels may be time multiplexed to sample alternate cycles of the input, and then their outputs combined by the summing output capacitor or by the post-processing circuit. The diodes may be reversed to detect the negative envelope rather than the positive envelope. Clocks for the switches may be generated from the input, or may be from a separate clock source. Since the sampling window is open for a whole input cycle, the clock source is insensitive to phase error.
摘要:
A low-headroom current driver does not use an op amp or resistor. A sensing transistor having its source connected to a drain of an output transistor senses variations in an output current. The gate, source, and drain voltages of the sensing transistor are mirrored to a sense mirror transistor to control a sense current. The sense current is mirrored to a reference source transistor to generate a mirrored sense current. An error between the mirrored sense current and a fixed reference current is stored as charge on an error-storing capacitor. The stored error charge creates a negative-feedback compensation current that adjusts a gate voltage generated by a feedback-driving transistor. The adjusted gate voltage controls the gate of the output transistor to compensate for the sensed variation in output current. The sensing current is also compensated using a sense-mirror tail transistor connected to the sense mirror transistor.
摘要:
A lateral p-n diode in the center of and surrounded by a vertical Silicon-Controlled Rectifier (SCR) forms an Electro-Static-Discharge (ESD) protection structure. The lateral p-n diode has a cross-shaped P+ diode tap with four rectangles of N+ diode regions in each corner of the cross. A P-well under the P+ diode tap is also an anode of a vertical PNPN SCR that has a deep N-well in a P-substrate. The deep N-well surrounds the lateral diode. Triggering MOS transistors are formed just beyond the four ends of the cross shaped P+ diode tap. Each triggering MOS transistor has N+ regions at the edge of the deep N-well and in the P-substrate that act as the cathode terminals. A deep P+ implant region under the N+ region at the edge of the deep N-well decreases a trigger voltage of the vertical SCR.