公开(公告)号：US06896927B2

公开(公告)日：2005-05-24

申请号：US10318003

申请日：2002-12-13

申请人： Hisashi Muraoka

发明人： Hisashi Muraoka

IPC分类号： H01L21/304 ,  B08B17/02 ,  H01L21/306 ,  H01L21/316 ,  B05D5/00

CPC分类号： B08B17/02 ,  H01L21/02052

摘要： An electronic device substrate, such as a semiconductor silicon wafer or a liquid crystal glass substrate, with a surface which has just undergone cleaning treatment and which is covered with a clean oxide or nitride film which will readily adsorb organic contaminants is treated with an aqueous solution containing choline, or alternatively a similar substrate which has not been cleaned is treated with a treatment solution comprising a SC-1 solution to which choline has been added. Following drying, a surface concentration of choline of between 5×1010 molecules˜7×1012 molecules/cm2 is adsorbed onto the substrate surface. This treatment suppresses organic contamination of the substrate from the atmosphere. As a result, the surface carbon concentration of an electronic device substrate can be suppressed to a value of no more than approximately 3×1013 atoms/cm2, even for manufacturing processes carried out in typical clean rooms with no chemical filters installed.

摘要翻译： 具有刚刚经过清洗处理并被容易吸附有机污染物的清洁氧化物或氮化物膜覆盖的表面的诸如半导体硅晶片或液晶玻璃基板的电子器件基板用水溶液 或者可替代地，还没有被清洁的类似的基质用包含已加入胆碱的SC-1溶液的处理溶液进行处理。 干燥后，5×10 10分子〜7×10 12分子/ cm 2之间的胆碱的表面浓度被吸附在基材表面上。 这种处理抑制了大气中底物的有机污染。 结果，电子器件衬底的表面碳浓度可以被抑制在不超过约3×10 13原子/ cm 2的值，即使对于所携带的制造工艺 在没有安装化学过滤器的典型洁净室中。

公开(公告)号：US06699330B1

公开(公告)日：2004-03-02

申请号：US09676976

申请日：2000-10-02

申请人： Hisashi Muraoka

发明人： Hisashi Muraoka

IPC分类号： C23G102

CPC分类号： B08B3/08 ,  C11D3/3947 ,  C11D7/265 ,  C11D7/30 ,  C11D11/0023 ,  Y10S134/902

摘要： A method of removing surface-deposited contaminants, comprising bringing an ozone-containing treating solution into contact with the surface of a treating target on which contaminants have deposited. The ozone-containing treating solution comprises an organic solvent having a partition coefficient to ozone in a gas, of 0.6 or more, and ozone having been dissolved in the solvent. Contaminants having deposited on the surfaces of various articles including substrates for electronic devices, such as semiconductor substrates and substrates for liquid crystal display devices can be removed by room-temperature and short-time treatment in a high safety and a good efficiency.

摘要翻译： 一种去除表面沉积的污染物的方法，包括使含臭氧的处理溶液与已经沉积有污染物的处理对象的表面接触。 含臭氧处理溶液包含具有0.6以上臭氧分配系数和臭氧溶解于溶剂中的有机溶剂。 可以通过室温和短时间处理以高安全性和高效率除去沉积在包括诸如半导体衬底的电子器件用基板和液晶显示装置用基板的各种制品的表面上的污染物。

公开(公告)号：US5636256A

公开(公告)日：1997-06-03

申请号：US706363

申请日：1996-08-30

申请人： Tuyoshi Matumura ,  Kunihiro Miyazaki ,  Hisashi Muraoka

发明人： Tuyoshi Matumura ,  Kunihiro Miyazaki ,  Hisashi Muraoka

IPC分类号： G01N23/223 ,  G01R31/26 ,  H01L21/66

CPC分类号： G01N23/223 ,  G01N2223/076

摘要： An apparatus is disclosed which is used for total reflection fluorescent X-ray analysis on a liquid drop-like sample containing very small amounts of impurities. The apparatus comprises a heat-resistant thin sheet containing an element or elements, as a principal component, not detected on total reflection fluorescent X-ray analysis and an x-ray source directing an X-ray as an incident X-ray at a liquid drop-like sample put on the sheet and containing very small amounts of impurities whereby the liquid drop-like sample is evaporated to a dried solid for the total reflection fluorescent X-ray analysis to be performed there.

摘要翻译： 公开了一种用于对含有非常少量杂质的液滴状样品进行全反射荧光X射线分析的装置。 该装置包括耐热薄片，其包含在全反射荧光X射线分析中未检测到的作为主要成分的元素或X射线源，X射线源作为液体的入射X射线 滴入样品放在片材上并含有非常少量的杂质，由此将液滴样品蒸发至干燥的固体，以进行全反射荧光X射线分析。

公开(公告)号：US5284802A

公开(公告)日：1994-02-08

申请号：US768190

申请日：1991-10-16

申请人： Hisashi Muraoka ,  Takeyoshi Kakizaki

发明人： Hisashi Muraoka ,  Takeyoshi Kakizaki

IPC分类号： G01N1/28 ,  H01L21/304 ,  H01L21/66 ,  H01L21/673 ,  H01L21/00 ,  H01L21/02

CPC分类号： H01L21/67353 ,  H01L21/67366 ,  H01L21/67383

摘要： There is disclosed a container which conveys a semiconductor wafer and in which the face of the wafer is chemically treated. The container comprises a receiving platelike member and a cover made from a transparent or semitransparent plastic. The platelike member is made from a hydrophobic plastic such as a fluorocarbon resin and provides a quite small area in contact with the sample of the wafer to support it. Tonguelike portions extend steeply upwardly around the sample. When the cover is closed, the tonguelike portions are thrown toward the center of the container, bent, and pressed against the side surface of the sample. The container locks the sample without making contact with the face of the sample. The top cover is fitted over the platelike member to maintain the airtightness. To assure the airtightness, the container is equipped with an O ring and a tightening implement.

摘要翻译： PCT No.PCT / JP91 / 00205 Sec。 371日期1991年10月16日 102（e）日期1991年10月16日PCT 1991年2月19日PCT PCT。 出版物WO91 / 12631 日期为1991年8月22日。公开了一种传送半导体晶片的容器，其中晶片的表面经过化学处理。 容器包括接收板状构件和由透明或半透明塑料制成的盖。 板状构件由诸如氟碳树脂的疏水性塑料制成，并提供与晶片样品接触的相当小的面积以支撑它。 Tonguelike部分围绕样品陡峭地向上延伸。 当盖关闭时，将舌状部分朝向容器的中心抛出，弯曲并压靠在样品的侧表面上。 容器锁定样品，而不与样品的表面接触。 顶盖安装在板状构件上以保持气密性。 为了保证气密性，容器配有O形圈和紧固件。

公开(公告)号：US06696228B2

公开(公告)日：2004-02-24

申请号：US10274153

申请日：2002-10-21

申请人： Hisashi Muraoka ,  Rieko Muraoka ,  Asuka Sato ,  Mitsuru Endo

发明人： Hisashi Muraoka ,  Rieko Muraoka ,  Asuka Sato ,  Mitsuru Endo

IPC分类号： G03F742

CPC分类号： G03F7/422 ,  B08B3/02 ,  B08B3/04 ,  B08B2203/005 ,  C09D9/005 ,  C11D7/266 ,  C11D11/0047 ,  G03F7/423

摘要： A method and an apparatus for removing an organic film such as a resist film from a substrate surface are provided. These are very safe even at high temperatures, and use a treatment liquid which can be recycled and reused. A treatment liquid typically formed from liquid ethylene carbonate, propylene carbonate, or a liquid mixture of these two compounds, and in particular such a treatment liquid containing dissolved ozone, is contacted with a substrate with an organic film, and the organic film is removed. Furthermore, an apparatus of the present invention (A) a treatment liquid delivery device for transporting the treatment liquid to a treatment area, (B) a film contact device for bringing the treatment liquid into contacting with the organic film surface of the substrate within the treatment area, (C) a liquid circulation device for recycling treatment liquid discharged from the treatment area and returning the recycled liquid to the treatment area via one or more temporary storage devices, and (D) an ozone dissolution device for bringing ozone containing gas into contact with the treatment liquid either within the treatment area and/or within the temporary storage devices.

摘要翻译： 提供了从基板表面去除诸如抗蚀剂膜的有机膜的方法和装置。 即使在高温下，这些也是非常安全的，并且使用可被回收和重复使用的处理液。 通常由液体碳酸亚乙酯，碳酸亚丙酯或这两种化合物的液体混合物形成的处理液体，特别是含有溶解臭氧的这种处理液体与有机膜与基材接触，并除去有机膜。 此外，本发明的装置（A）是将处理液输送到处理区域的处理液输送装置，（B）将处理液与基板的有机膜表面接触的膜接触装置， 处理区域，（C）用于再循环处理区域排出的处理液体的液体循环装置，并且经由一个或多个临时存储装置将再循环液体返回到处理区域，以及（D）将含臭氧气体的臭氧溶解装置 在处理区域内和/或临时存储装置内与处理液体接触。

公开(公告)号：US4515755A

公开(公告)日：1985-05-07

申请号：US368440

申请日：1982-04-14

申请人： Shuitsu Matsuo ,  Yasuhiro Imanishi ,  Hideo Nagashima ,  Masaharu Watanabe ,  Toshiro Usami ,  Hisashi Muraoka

发明人： Shuitsu Matsuo ,  Yasuhiro Imanishi ,  Hideo Nagashima ,  Masaharu Watanabe ,  Toshiro Usami ,  Hisashi Muraoka

IPC分类号： C04B35/584 ,  C30B15/10 ,  C30B15/24 ,  C30B15/34

CPC分类号： C04B35/584 ,  C30B15/10 ,  C30B15/24 ,  Y10S117/90 ,  Y10T117/1032

摘要： An apparatus for producing silicon single crystal from melted silicon by the pull-up process using a seed crystal, wherein at least a portion of a device in contact with the melted silicon includes a layer of silicon nitride precipitated from gaseous phase and comprising 20% or above of .beta. phase, or comprising 80% or above of .alpha. phase whose crystal grains have grain diameters of 5 .mu.m or above at a ratio of 10% or more.

摘要翻译： 一种通过使用晶种的上拉工艺从熔融硅生产硅单晶的装置，其中与熔融硅接触的装置的至少一部分包括从气相沉淀的氮化硅层，并且包含20％或 β相以上，或者包含80％以上的α晶相，其晶粒的晶粒直径为5μm以上，比例为10％以上。

公开(公告)号：US4239661A

公开(公告)日：1980-12-16

申请号：US927139

申请日：1978-07-21

申请人： Hisashi Muraoka ,  Masafumi Asano ,  Taizo Ohashi ,  Yuzo Shimazaki

发明人： Hisashi Muraoka ,  Masafumi Asano ,  Taizo Ohashi ,  Yuzo Shimazaki

IPC分类号： C11D3/30 ,  C23G1/14 ,  H01L21/306 ,  C11D3/26 ,  C11D7/32

CPC分类号： H01L21/02052 ,  C11D3/30 ,  C23G1/14

摘要： A surface-treating agent formed of an aqueous solution containing 0.01 to 20% by weight of trialkyl(hydroxyalkyl) ammonium hydroxide. The treating agent is adapted to be used for the effective removal of organic and inorganic contaminants deposited on the surface of intermediate semiconductor products obtained in the respective steps of manufacturing a semiconductor device and the efficient etching of a metal layer used as wiring. Further, it can be used for the elimination of those portions of a positive working photoresist film coated on the surface of the intermediate semiconductor products which are and are not exposed to a light by controlling its concentration.

摘要翻译： 由0.01〜20重量％的三烷基（羟烷基）氢氧化铵的水溶液形成的表面处理剂。 处理剂适于用于有效去除沉积在制造半导体器件的各个步骤中获得的中间半导体产品的表面上的有机和无机污染物以及用作布线的金属层的有效蚀刻。 此外，其可以用于通过控制其浓度来消除涂覆在中间半导体产品的表面上并且不暴露于光的正性光致抗蚀剂膜的那些部分。

公开(公告)号：US6059887A

公开(公告)日：2000-05-09

申请号：US54511

申请日：1998-04-03

申请人： Hisashi Muraoka ,  Hiroshi Tomita ,  Soichi Nadahara ,  Norio Kobayashi

发明人： Hisashi Muraoka ,  Hiroshi Tomita ,  Soichi Nadahara ,  Norio Kobayashi

IPC分类号： H01L21/304 ,  H01L21/322 ,  C03C23/00

CPC分类号： H01L21/3221

摘要： A process of cleaning the interior of a semiconductor substrate containing metallic impurities therein is provided. The semiconductor substrate is heated, with one side or the both sides thereof being in contact with a melt of a metal or an inorganic salt, at a high temperature such that the melt does not react with these semiconductor and the semiconductor is not melted. By this process, the impurities present inside the substrate are removed out of the substrate and the interior thereof is cleaned.

摘要翻译： 提供了清洗其中含有金属杂质的半导体衬底的内部的工艺。 加热半导体衬底，其一侧或其两侧在高温下与金属或无机盐的熔体接触，使得熔体不与这些半导体反应，并且半导体不熔化。 通过该处理，存在于基板内的杂质从基板中除去，其内部被清洁。

公开(公告)号：US6054373A

公开(公告)日：2000-04-25

申请号：US6996

申请日：1998-01-14

申请人： Hiroshi Tomita ,  Hisashi Muraoka ,  Ryuji Takeda

发明人： Hiroshi Tomita ,  Hisashi Muraoka ,  Ryuji Takeda

IPC分类号： H01L21/304 ,  H01L21/00 ,  H01L21/322

CPC分类号： H01L21/67057 ,  H01L21/3221

摘要： A method of removing metallic impurities diffused in a semiconductor substrate, comprising, the semiconductor-substrate-heating step of heating a semiconductor substrate to at least 200.degree. C. or higher and promoting the release and rediffusion of metallic impurities diffused in the semiconductor substrate, and the metallic-impurity-removing step of dissolving the metallic impurities arrived at the surface of the semiconductor substrate with a chemical agent and removing them from the substrate.

摘要翻译： 一种去除在半导体衬底中扩散的金属杂质的方法，包括将半导体衬底加热到​​至少200℃或更高并促进在半导体衬底中扩散的金属杂质的释放和再扩散的半导体衬底加热步骤， 以及金属杂质去除步骤，用金属杂质去除步骤，用化学试剂将金属杂质溶解到半导体衬底的表面，并将其从衬底上除去。

公开(公告)号：US5681398A

公开(公告)日：1997-10-28

申请号：US405876

申请日：1995-03-17

申请人： Hisashi Muraoka

发明人： Hisashi Muraoka

IPC分类号： C11D1/00 ,  C11D3/02 ,  H01L21/306 ,  C23G1/02 ,  B08B7/00

CPC分类号： H01L21/02052 ,  C11D1/004 ,  C11D3/042 ,  H01L21/02019 ,  H01L21/30604

摘要： The present invention provides a method for cleaning a silicon wafer with a cleaning fluid, comprising 35 to 65% by weight of HNO.sub.3, 0.05 to 0.5% by weight of HF, 0.05 to 0.5% by weight of HCl, 0.002 to 0.1% by weight of a surface-active agent, and water. The silicon wafer cleaning method involves comprising treating the surface of a silicon wafer with said cleaning fluid. According to the present method, etching of the silicon wafer surface can be carried out simply with the amount of the etching being controlled to several tens .ANG., and particularly about 20 to 30 .ANG., and without damage to the smoothness of the surface. In addition, contamination with gold and other heavy metals of the order of 10.sup.12 atoms/cm.sup.2 can be decreased to not more than 1/100.

摘要翻译： 本发明提供了一种用清洗液清洗硅晶片的方法，该方法包括35-65％（重量）的HNO3，0.05-0.5％（重量）的HF，0.05-0.5％（重量）的HCl，0.002-0.1％（重量） 的表面活性剂和水。 硅晶片清洁方法包括包括用所述清洁流体处理硅晶片的表面。 根据本方法，可以简单地进行硅晶片表面的蚀刻，其中蚀刻量被控制到几十个角度，特别是约20-30μm，并且不损害表面的平滑度。 此外，金和其他重金属的污染量为1012原子/ cm2可以降低到不超过+ E，fra 1/100 + EE。