摘要:
A target region extracting unit configured to extract a target region used in acquiring feature information from each frame of a moving image includes a plurality of image analyzing units (first and second image analyzing units) configured to execute image analyzing processes in parallel for extraction of the target regions on each frame of the moving image in different manners, and an information transmission processing unit configured to execute a process of transmitting result information of the image analyzing processes among the plurality of image analyzing units.
摘要:
An imaging apparatus includes: a plurality of photoelectric converters each adapted to perform photoelectric conversion in response to receiving light, and output an electrical signal; a holding unit adapted to hold, for each of the plurality of photoelectric converters, a correction value for correcting photoelectric conversion characteristics of the photoelectric converter; and a correction unit adapted to correct each of the electrical signals output by the plurality of photoelectric converters, using the corresponding correction values, wherein the correction unit corrects each of the electrical signals based on the correction values, which have been increased or decreased in accordance with a prescribed pixel arrangement pattern, and the imaging apparatus comprises a determination unit adapted to evaluate correction results that are based on the correction values increased or decreased in accordance with the prescribed pattern, and determine a presence of a correction error in the correction values held in the holding unit.
摘要:
A memory wherein any “disturb effect” can be suppressed in which data in unselected memory cells are lost. This memory has a memory cell array (1) including bit lines, word lines, which are disposed to intersect the bit lines, and memory cells (12) each connected between bit and word lines. In this memory, an access operation, which includes at least one of read, rewrite and write operations, is made to a selected memory cell (12). During this access operation, it is performed to apply to the memory cell (12) a first voltage pulse, which provides an electrical field in a first direction so as to invert a stored data, and a second voltage pulse, which provides as electrical field in the opposite direction to the first one so as not to invert the stored data. In addition, a recovery operation for recovering a residual polarization amount is made to the memory cell (12).
摘要:
A memory includes a first holding circuit holding a first address of first data, a second holding circuit holding at least one of a second address of the first data and the amount of the first data, and an operation control circuit performing an operation rewriting the first address, an operation rewriting the second address or the amount of the first data and an operation continuously holding the first address and the second address or the amount of the first data.
摘要:
An image processing apparatus is provided. The apparatus includes a setting unit configured to set a radiation exposure condition; a radiation generation unit configured to generate a radiation beam according to the radiation exposure condition; a two-dimensional radiation sensor configured to transform the reached radiation beam into a radiation image data and output the radiation image data; a storage unit configured to store the radiation image data; a detecting unit configured to detect a scattered radiation fluctuation in the reached radiation beam based on a comparison of two radiation image data with different radiation exposure condition, where the two radiation image data are selected within the plurality of radiation image data stored in the storage unit; and an image processing unit configured to extract a outline of a region of interest from the radiation image data based on the scattered radiation fluctuation detected by the detecting unit.
摘要:
A memory capable of performing a refresh operation uncompetitively with an internal access operation also when an external access operation is non-cyclically performed is obtained. This memory comprises an external access detection portion detecting an external access operation, an access control portion performing an internal access operation on the basis of the external access operation and a refresh determination portion determining whether or not to perform a refresh operation on the basis of detection of the external access operation by the external access detection portion and the operating state of the access control portion. The access control portion performs the refresh operation before or after the internal access operation on the basis of the result of determination of the refresh determination portion.
摘要:
A flip-flop circuit capable of inhibiting current consumption as well as the circuit scale from increase is provided. This flip-flop circuit comprises a first latch circuit including first and second inverter circuits. A first power supply line capable of switching a supplied potential between a fixing potential supplied for fixing the potentials of output nodes of the first and second inverter circuits and a floating potential supplied for floating the potentials of the output nodes of the first and second inverter circuits is connected to the first latch circuit.
摘要:
A memory allowing reduction of the period of an external access operation is provided. This memory comprises an access control portion performing an internal access operation on the basis of an external access operation, a refresh control portion performing a refresh operation and a refresh division control portion dividing the refresh operation into a read operation RFRD and rewrite operations RFRS1 and RFRS2. The memory performs the read operation RFRD and the rewrite operations RFRS1 and RFRS2 at least either before or after different internal access operations corresponding to different external access operations respectively.
摘要:
A memory capable of effectively reducing the chip size not only by sharing a read/write circuit but also by reducing a memory cell size is provided. This memory comprises a first memory cell array having a plurality of first memory cells, a second memory cell array having a plurality of second memory cells different in type from the first memory cells and a selection control circuit provided separately from the first memory cell array and the second memory cell array for controlling selection of either the first memory cell array or the second memory cell array.
摘要:
A memory allowing reduction of the period of an external access operation is provided. This memory comprises an access control portion performing an internal access operation on the basis of an external access operation, a refresh control portion performing a refresh operation and a refresh division control portion dividing the refresh operation into a read operation RFRD and rewrite operations RFRS1 and RFRS2. The memory performs the read operation RFRD and the rewrite operations RFRS1 and RFRS2 at least either before or after different internal access operations corresponding to different external access operations respectively.