发明授权
- 专利标题: Memory
- 专利标题(中): 记忆
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申请号: US11090660申请日: 2005-03-28
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公开(公告)号: US07319606B2公开(公告)日: 2008-01-15
- 发明人: Hideaki Miyamoto
- 申请人: Hideaki Miyamoto
- 申请人地址: JP Moriguchi
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JP Moriguchi
- 代理机构: Arent Fox LLP
- 优先权: JP2004-095392 20040329
- 主分类号: G11C11/22
- IPC分类号: G11C11/22
摘要:
A memory capable of effectively reducing the chip size not only by sharing a read/write circuit but also by reducing a memory cell size is provided. This memory comprises a first memory cell array having a plurality of first memory cells, a second memory cell array having a plurality of second memory cells different in type from the first memory cells and a selection control circuit provided separately from the first memory cell array and the second memory cell array for controlling selection of either the first memory cell array or the second memory cell array.
公开/授权文献
- US20050213419A1 Memory 公开/授权日:2005-09-29
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