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公开(公告)号：US08865592B2
公开(公告)日：2014-10-21
申请号：US12364804
申请日：2009-02-03
申请人： Jiang Yan , Henning Haffner , Frank Huebinger , SunOo Kim , Richard Lindsay , Klaus Schruefer
发明人： Jiang Yan , Henning Haffner , Frank Huebinger , SunOo Kim , Richard Lindsay , Klaus Schruefer
IPC分类号： H01L21/44 , H01L23/525 , H01L21/28 , H01L29/49
CPC分类号： H01L27/0617 , H01L21/28088 , H01L23/5256 , H01L29/0653 , H01L29/4958 , H01L29/4966 , H01L2924/0002 , H01L2924/00
摘要： A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.
摘要翻译： 优选实施例包括制造熔丝元件的方法，该方法包括在半导体结构上形成多晶硅层，用碳或氮掺杂多晶硅层，在多晶硅层上沉积金属; 以及退火所述金属和多晶硅层以在所述多晶硅层的上部形成硅化物。
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2.发明授权公开(公告)号：US08161421B2
公开(公告)日：2012-04-17
申请号：US12168383
申请日：2008-07-07
IPC分类号： G06F17/50
摘要： A method of training an Optical Proximity Correction (OPC) model comprises symmetrizing a complex design to be a test pattern having orthogonal symmetry. Symmetrizing may comprise establishing a axis of symmetry passing through the design, thereby dividing the design into two portions; deleting one of the two portions; and mirror-imaging the other of the two portions about the axis of symmetry. The design may be centered.
摘要翻译： 训练光学邻近校正（OPC）模型的方法包括将复杂设计对称为具有正交对称性的测试图案。 对称可以包括建立通过设计的对称轴，从而将设计分成两部分; 删除两部分之一; 并且围绕对称轴对两个部分中的另一个进行镜像成像。 设计可能居中。
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公开(公告)号：US08078998B2
公开(公告)日：2011-12-13
申请号：US12839750
申请日：2010-07-20
申请人： Henning Haffner , Manfred Eller , Richard Lindsay
发明人： Henning Haffner , Manfred Eller , Richard Lindsay
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G03F1/00 , G06F2217/12 , H01L21/0334 , H01L21/28123 , H01L21/823425 , H01L21/823437 , H01L27/0207 , H01L27/082 , H01L27/085 , H01L27/088 , H01L29/6659 , H01L29/7833 , Y10T29/41
摘要： Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes using a first mask to pattern a gate material forming a plurality of first and second features. The first features form gate electrodes of the semiconductor devices, whereas the second features are dummy electrodes. Based on the location of these dummy electrodes, selected dummy electrodes are removed using a second mask. The use of the method provides greater flexibility in tailoring individual devices for different objectives.
摘要翻译： 公开了集成电路及其制造和设计方法。 例如，制造方法包括使用第一掩模对形成多个第一和第二特征的栅极材料进行图案化。 第一特征形成半导体器件的栅电极，而第二特征是虚拟电极。 基于这些虚拟电极的位置，使用第二掩模去除所选择的虚拟电极。 该方法的使用提供了更大的灵活性，为不同的目标定制单个设备。
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公开(公告)号：US07975246B2
公开(公告)日：2011-07-05
申请号：US12191493
申请日：2008-08-14
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A method that purposely relaxes OPC algorithm constraints to allow post OPC mask shapes to elongate along one direction (particularly lowering the 1-dimensional MEEF in this direction with the result of an effectively overall lowered MEEF) to produce a pattern on wafer that is circular to within an acceptable tolerance.
摘要翻译： 一种意图放松OPC算法约束以允许OPC掩模形状沿着一个方向伸长的方法（特别是在该方向上降低1维MEEF，结果是有效地降低了MEEF），从而在晶圆上产生一个圆形到 在可接受的容限内。
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公开(公告)号：US07799486B2
公开(公告)日：2010-09-21
申请号：US11602886
申请日：2006-11-21
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , G02B5/3083 , Y10T428/24479
摘要： Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.
摘要翻译： 公开了平版印刷掩模及其制造方法。 优选实施例包括制造光刻掩模的方法。 所述方法包括提供衬底，在所述衬底的第一区域中形成第一图案，以及在所述衬底的第二区域中形成第二图案，所述第二图案包括不同于第一图案特征的图案的图案。 该方法包括在第一区域中比在衬底的第二区域中影响光的偏振旋转。
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6.发明申请Contact Level Mask Layouts By Introducing Anisotropic Sub-Resolution Assist Features 审中-公开通过引入各向异性分解辅助功能的接触层面罩布局公开(公告)号：US20090191468A1
公开(公告)日：2009-07-30
申请号：US12021527
申请日：2008-01-29
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： This disclosure includes a SRAF layout that minimizes the number of SRAFs required to reliably print contact shapes. A method is provided that reduces the number of necessary SRAF features on a mask, placing at least two elongated SRAF shapes on the mask such that the elongated SRAF shapes extend past at least one edge of a mask shape in at least one direction.
摘要翻译： 本公开包括SRAF布局，其最小化可靠地打印接触形状所需的SRAF的数量。 提供了一种减少掩模上必要的SRAF特征的数量的方法，在掩模上放置至少两个细长的SRAF形状，使得细长SRAF形状延伸经过至少一个方向上的掩模形状的至少一个边缘。
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公开(公告)号：US20090092926A1
公开(公告)日：2009-04-09
申请号：US11868374
申请日：2007-10-05
IPC分类号： G03C5/00
CPC分类号： G03F7/70466 , G03F1/26 , G03F1/70 , G03F7/70208 , G03F7/70283
摘要： Multi-beam lithography systems and methods of manufacturing semiconductor devices using the same are disclosed. For example, the method utilizes non-coincidence of boundaries of electrical fields emanating from chrome on glass or phase shifted mask features distributed over two masks for the optimization of lithographic process windows, side lobe suppression, or pattern orientation dependent process window optimization employing one mask with polarization rotating film on the backside.
摘要翻译： 公开了多光束光刻系统和使用其的制造半导体器件的方法。 例如，该方法利用玻璃上镀铬的电场边界的不重合或分布在两个掩模上的相移掩模特征，用于优化光刻工艺窗口，旁瓣抑制或使用一个掩模的图案取向依赖的工艺窗口优化 背面有偏振旋转胶片。
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公开(公告)号：US20090079005A1
公开(公告)日：2009-03-26
申请号：US11860955
申请日：2007-09-25
申请人： Henning Haffner , Manfred Eller , Richard Lindsay
发明人： Henning Haffner , Manfred Eller , Richard Lindsay
IPC分类号： H01L29/76 , B44C1/22 , G06F17/50 , H01L21/3205 , H01L21/76
CPC分类号： G06F17/5072 , G03F1/00 , G06F2217/12 , H01L21/0334 , H01L21/28123 , H01L21/823425 , H01L21/823437 , H01L27/0207 , H01L27/082 , H01L27/085 , H01L27/088 , H01L29/6659 , H01L29/7833 , Y10T29/41
摘要： Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes using a first mask to pattern a gate material forming a plurality of first and second features. The first features form gate electrodes of the semiconductor devices, whereas the second features are dummy electrodes. Based on the location of these dummy electrodes, selected dummy electrodes are removed using a second mask. The use of the method provides greater flexibility in tailoring individual devices for different objectives.
摘要翻译： 公开了集成电路及其制造和设计方法。 例如，制造方法包括使用第一掩模对形成多个第一和第二特征的栅极材料进行图案化。 第一特征形成半导体器件的栅电极，而第二特征是虚拟电极。 基于这些虚拟电极的位置，使用第二掩模去除所选择的虚拟电极。 该方法的使用提供了更大的灵活性，为不同的目标定制单个设备。
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公开(公告)号：US20080076036A1
公开(公告)日：2008-03-27
申请号：US11527075
申请日：2006-09-26
申请人： Henning Haffner
发明人： Henning Haffner
CPC分类号： G03F7/70441 , G03F1/30 , G03F1/36 , G03F7/70433
摘要： A mask and method for patterning a semiconductor wafer is disclosed. A mask set is fabricated on a transparent substrate. A mask layer comprising mask region elements that transmit light is disposed on the substrate, wherein each mask element is segmented into a plurality of segments.
摘要翻译： 公开了用于图案化半导体晶片的掩模和方法。 在透明基板上制作掩模组。 包含透光的掩模区域元件的掩模层设置在基板上，其中每个掩模元件被分割成多个段。
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公开(公告)号：US07304721B2
公开(公告)日：2007-12-04
申请号：US10984797
申请日：2004-11-10
IPC分类号： G01N21/00
CPC分类号： G01N21/95692 , G01N2021/95676 , G03F1/84
摘要： The method of dynamically monitoring a reticle includes preventively macro monitoring and defect inspecting with regard to mechanical loading, including particle deposits or electrostatically induced damage, and energy load, including the associated changes to the reticle material and surface characteristics. Different surface distributions of the absorber layer as well as characteristics of the exposure system, such as N2 purging of the projection lens/reticle area in order to reduce contamination and recrystallization on optically active surfaces are considered.
摘要翻译： 动态监测掩模版的方法包括对机械载荷（包括颗粒沉积物或静电诱发的损伤）以及能量负载（包括对掩模版材料的相关变化和表面特性）的预防性宏观监测和缺陷检查。 考虑吸收层的不同表面分布以及曝光系统的特性，例如投影透镜/掩模版区域的N 2清洗，以减少光学活性表面上的污染和重结晶。
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