公开(公告)号：US08674209B2

公开(公告)日：2014-03-18

申请号：US12809581

申请日：2008-12-19

Applicant: Jin Hong ,  Chang Sil Yang ,  Gi Chung Kwon

Inventor： Jin Hong ,  Chang Sil Yang ,  Gi Chung Kwon

IPC: H01L31/042 ,  H01L31/00 ,  H02N6/00

CPC classification number: H01L31/02366 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/075 ,  Y02E10/548

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, which is capable of improving solar-ray transmittance and dispersion efficiency by the increased effective area for absorbing the solar ray through the use of substrate with a predetermined pattern having protrusions and depressions, wherein the method comprises preparing a substrate with a predetermined pattern having protrusions and depressions on its one surface; forming a front electrode on the substrate; forming a semiconductor layer on the front electrode; and forming a rear electrode on the semiconductor layer.

Abstract translation: 公开了一种薄膜型太阳能电池及其制造方法，其能够通过使用具有突起的预定图案的基板来增加吸收太阳光线的有效面积来提高太阳光线透射率和分散效率， 凹陷，其中所述方法包括在其一个表面上制备具有突起和凹陷的预定图案的基底; 在所述基板上形成前电极; 在前电极上形成半导体层; 以及在所述半导体层上形成后电极。

公开(公告)号：US20090223930A1

公开(公告)日：2009-09-10

申请号：US12395702

申请日：2009-03-01

Applicant: Gi-Chung KWON ,  Joung-Sik Kim ,  Jin Hong

Inventor： Gi-Chung KWON ,  Joung-Sik Kim ,  Jin Hong

IPC: B44C1/22 ,  C23F1/08

CPC classification number: H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: An apparatus for etching a substrate includes: a chamber; a susceptor in the chamber, the susceptor including at least one loading portion corresponding to at least one substrate; a gas supply over the susceptor, the gas supply including a hollow and at least one through hole corresponding to the at least one loading portions; and at least one shielding means interposed into the at least one through holes, the at least one shielding means including a body part and a hanging part on the body part, the body pail having a cross-sectional area smaller than the at least one through holes, and the hanging part outwardly protruding from the body part, wherein the at least one shielding means is suspended on the gas supply by the hanging part, and wherein the body part shields a central portion of the at least one substrate and exposes an edge portion of the at least one substrate.

Abstract translation: 一种用于蚀刻衬底的设备包括：腔室; 所述腔室中的基座，所述基座包括对应于至少一个基板的至少一个装载部分; 在所述基座上的气体供应，所述气体供应包括对应于所述至少一个装载部分的中空和至少一个通孔; 以及至少一个插入所述至少一个通孔中的屏蔽装置，所述至少一个屏蔽装置包括主体部分和主体部分上的悬挂部分，所述主体桶的横截面面积小于至少一个通孔 并且所述悬挂部分从所述主体部分向外突出，其中所述至少一个屏蔽装置通过所述悬挂部分悬挂在所述气体供应器上，并且其中所述主体部分屏蔽所述至少一个基板的中心部分并且暴露出边缘 至少一个基底的部分。

公开(公告)号：US20090183834A1

公开(公告)日：2009-07-23

申请号：US12111903

申请日：2008-04-29

Applicant: Gi-Chung KWON ,  Sang-Won LEE ,  Sae-Hoon UHM ,  Jae-Hyun KIM ,  Bo-Han HONG ,  Yong-Kwan LEE

Inventor： Gi-Chung KWON ,  Sang-Won LEE ,  Sae-Hoon UHM ,  Jae-Hyun KIM ,  Bo-Han HONG ,  Yong-Kwan LEE

IPC: C23F1/08 ,  C23C16/54

CPC classification number: H01J37/32935 ,  H01J37/321 ,  H05H1/46

Abstract: A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

Abstract translation: 等离子体产生装置包括：具有室盖并限定气密反应区域的室; 室内的一个感受器; 向处理室供给处理气体的气体供给装置; 以及相对于所述基座通过所述室盖垂直设置的环形芯，包括：与所述室结合的环形铁磁芯，所述环形铁磁芯具有在所述室外部的第一部分和所述室内的第二部分，所述第二部分具有 开口部; 连接到所述室的射频（RF）电源; 感应线圈，其电连接到所述RF电源，所述感应线圈滚动所述第一部分; 以及与RF电源和感应线圈之间的阻抗匹配的匹配电路。

公开(公告)号：US07465672B2

公开(公告)日：2008-12-16

申请号：US11556127

申请日：2006-11-02

Applicant: Gi-Chung Kwon ,  Nae-Eung Lee ,  Chang-Ki Park ,  Chun-Hee Lee ,  Duck-Ho Kim

Inventor： Gi-Chung Kwon ,  Nae-Eung Lee ,  Chang-Ki Park ,  Chun-Hee Lee ,  Duck-Ho Kim

IPC: H01L21/302

CPC classification number: H01L21/31116 ,  G03F7/11 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Abstract translation: 本发明涉及一种形成蚀刻掩模的方法。 根据本发明，提供一种形成蚀刻掩模的方法，包括以下步骤：在衬底上沉积含有硅的硬掩模膜; 在硬掩模膜上沉积光致抗蚀剂; 图案化光刻胶; 并使用光致抗蚀剂图案作为掩模蚀刻硬掩膜，并使用包括CH x F y（x，y = 1,2,3）气体的蚀刻气体。 此时，在193nm以下的波长下使用的光刻胶图案上刻蚀硬掩模膜时，可以使用包括CH 2 F 2和H 2气体的混合气体来增加硬掩模膜对光致抗蚀剂图案的蚀刻选择性。

公开(公告)号：US20060191880A1

公开(公告)日：2006-08-31

申请号：US11356947

申请日：2006-02-16

Applicant: Gi-Chung Kwon ,  Sang-Won Lee ,  Sae-Hoon Uhm ,  Jae-Hyun Kim ,  Bo-Han Hong ,  Yong-Kwan Lee

Inventor： Gi-Chung Kwon ,  Sang-Won Lee ,  Sae-Hoon Uhm ,  Jae-Hyun Kim ,  Bo-Han Hong ,  Yong-Kwan Lee

IPC: B23K9/00 ,  B23K9/02

CPC classification number: H01J37/32935 ,  H01J37/321 ,  H05H1/46

Abstract: A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

Abstract translation: 等离子体产生装置包括：具有室盖并限定气密反应区域的室; 室内的一个感受器; 向处理室供给处理气体的气体供给装置; 以及相对于所述基座通过所述室盖垂直设置的环形芯，包括：与所述室结合的环形铁磁芯，所述环形铁磁芯具有在所述室外部的第一部分和所述室内的第二部分，所述第二部分具有 开口部; 连接到所述室的射频（RF）电源; 感应线圈，其电连接到所述RF电源，所述感应线圈滚动所述第一部分; 以及与RF电源和感应线圈之间的阻抗匹配的匹配电路。

公开(公告)号：US06770836B2

公开(公告)日：2004-08-03

申请号：US10100983

申请日：2002-03-19

Applicant: Gi-Chung Kwon ,  Hong-Sik Byun ,  Sung-Weon Lee ,  Hong-Seub Kim ,  Sun-Seok Han ,  Bu-Jin Ko ,  Joung-Sik Kim

Inventor： Gi-Chung Kwon ,  Hong-Sik Byun ,  Sung-Weon Lee ,  Hong-Seub Kim ,  Sun-Seok Han ,  Bu-Jin Ko ,  Joung-Sik Kim

IPC: B23K1000

CPC classification number: H01J37/321 ,  H01J37/32183 ,  H05H1/46

Abstract: An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.

Abstract translation: 一种用于等离子体源的阻抗匹配电路包括：第一网络，包括：第一线圈; 以及向所述第一线圈施加第一电压的RF电源; 和第二网络; 接地的第二线圈具有第二电压，第二电压低于第一电压; 第一和第二无功元件，第一和第二无功元件的一个端部分别连接到第二线圈的每个端部; 以及连接到第一和第二无功元件的另一端部的负载，负载的两个端部处的相位彼此不同。

公开(公告)号：US07442273B2

公开(公告)日：2008-10-28

申请号：US10892259

申请日：2004-07-14

Applicant: Gi-Chung Kwon ,  Hong-Young Chang ,  Yong-Kwan Lee

Inventor： Gi-Chung Kwon ,  Hong-Young Chang ,  Yong-Kwan Lee

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32174 ,  H01J37/32082 ,  H01J37/321

Abstract: A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency generator; first and second antennas connected to the impedance matching circuit in parallel, a power of the high frequency generator being supplied to the first and second antennas; an electrode of a plate shape connected to one of the first and second antennas in serial, the power of the high frequency generator being supplied to the electrode; and a power distributor between the high frequency generator and one of the first and second antennas.

Abstract translation: 混合耦合等离子体型装置包括：具有气体注入单元的室; 腔室中的静电卡盘; 气体注入单元上的绝缘板; 高频发生器; 连接到高频发生器的阻抗匹配电路; 第一和第二天线并联连接到阻抗匹配电路，高频发生器的功率被提供给第一和第二天线; 连接到第一和第二天线中的一个的板状电极，高频发生器的功率被提供给电极; 以及高频发生器与第一和第二天线之一之间的功率分配器。

公开(公告)号：US07411148B2

公开(公告)日：2008-08-12

申请号：US11356947

申请日：2006-02-16

Applicant: Gi-Chung Kwon ,  Sang-Won Lee ,  Sae-Hoon Uhm ,  Jae-Hyun Kim ,  Bo-Han Hong ,  Yong-Kwan Lee

Inventor： Gi-Chung Kwon ,  Sang-Won Lee ,  Sae-Hoon Uhm ,  Jae-Hyun Kim ,  Bo-Han Hong ,  Yong-Kwan Lee

IPC: B23K9/00 ,  B23K9/02

CPC classification number: H01J37/32935 ,  H01J37/321 ,  H05H1/46

Abstract: A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supplier supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, including: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

Abstract translation: 等离子体产生装置包括：具有室盖并限定气密反应区域的室; 室内的一个感受器; 供应处理气体的气体供应器; 以及相对于所述基座通过所述室盖垂直设置的环形芯，包括：与所述室结合的环形铁磁芯，所述环形铁磁芯具有在所述室外部的第一部分和所述室内的第二部分，所述第二部分具有 开口部; 连接到所述室的射频（RF）电源; 感应线圈，其电连接到所述RF电源，所述感应线圈滚动所述第一部分; 以及与RF电源和感应线圈之间的阻抗匹配的匹配电路。

公开(公告)号：US20070114205A1

公开(公告)日：2007-05-24

申请号：US11556127

申请日：2006-11-02

Applicant: Gi-Chung KWON ,  Nae-Eung LEE ,  Chang-Ki PARK ,  Chun-Hee LEE ,  Duck-Ho KIM

Inventor： Gi-Chung KWON ,  Nae-Eung LEE ,  Chang-Ki PARK ,  Chun-Hee LEE ,  Duck-Ho KIM

IPC: C23F1/00 ,  H01L21/461 ,  B44C1/22 ,  H01L21/302

CPC classification number: H01L21/31116 ,  G03F7/11 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Abstract translation: 本发明涉及一种形成蚀刻掩模的方法。 根据本发明，提供一种形成蚀刻掩模的方法，包括以下步骤：在衬底上沉积含有硅的硬掩模膜; 在硬掩模膜上沉积光致抗蚀剂; 图案化光刻胶; 并使用光致抗蚀剂图案作为掩模蚀刻硬掩模膜，并使用包含CH 2 x N x（x，y = 1,2,3）气体的蚀刻气体 。 此时，可以使用包括CH 2 2 H 2 H 2和H 2 O 2的混合气体来增加硬掩模膜对光致抗蚀剂图案的蚀刻选择性， 在193nm以下的波长下使用的光致抗蚀剂图案上刻蚀硬掩模膜时，

公开(公告)号：US06685800B2

公开(公告)日：2004-02-03

申请号：US10003195

申请日：2001-11-14

Applicant: Hong Seub Kim ,  Gi Chung Kwon ,  Sun Seok Han ,  Choong Won Lee ,  Sung Weon Lee ,  Hong Sik Byun

Inventor： Hong Seub Kim ,  Gi Chung Kwon ,  Sun Seok Han ,  Choong Won Lee ,  Sung Weon Lee ,  Hong Sik Byun

IPC: C23C1600

CPC classification number: H01J37/32522 ,  H01J37/321

Abstract: Disclosed is an apparatus for generating ICP, which has a heater having a hot wire as a heating source for heating elements in a chamber and inner wall of the chamber and also efficiently transfers heat of the heater through a heat transferring gas to the elements in the chamber and the inner wall of the chamber. According to the present invention, the elements in the chamber and the inner wall of the chamber can be heated up to a temperature of about 200° C., thereby reducing the adhesion of the by-product served as the source generating the undesirable particles. In addition, since the hot wire having a longer life span than the halogen lamp is used as heat radiating means, the life span of the apparatus is also increased.

Abstract translation: 公开了一种用于产生ICP的装置，其具有加热器，该加热器具有热丝作为加热室，用于加热腔室中的元件和腔室的内壁，并且还通过传热气体将加热器的热量有效地传递到 室和室的内壁。 根据本发明，室中的元件和室的内壁可被加热至约200℃的温度，从而降低了作为产生不期望的颗粒的源的副产物的粘附。 此外，由于使用寿命比卤素灯长的热丝作为散热装置，因此装置的使用寿命也增加。