公开(公告)号：US06847516B2

公开(公告)日：2005-01-25

申请号：US10234695

申请日：2002-09-04

Applicant: Gi-Chung Kwon ,  Hong-Sik Byun ,  Sung-Weon Lee ,  Hong-Seub Kim ,  Sun-Seok Han ,  Bu-Jin Ko ,  Joung-Sik Kim

Inventor： Gi-Chung Kwon ,  Hong-Sik Byun ,  Sung-Weon Lee ,  Hong-Seub Kim ,  Sun-Seok Han ,  Bu-Jin Ko ,  Joung-Sik Kim

IPC: H01L21/3065 ,  H01L21/683 ,  H01T23/00

CPC classification number: H01L21/6833

Abstract: An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.

Abstract translation: 静电卡盘包括：金属板; 金属板上的电介质层，电介质层和金属板具有提升销孔和冷却气体的注入孔; 升降销通过升降销孔上下移动; 第一保护绝缘子在提升销孔的内表面上; 和在注入孔的内表面上的第二保护绝缘体。

公开(公告)号：US06653988B2

公开(公告)日：2003-11-25

申请号：US10185676

申请日：2002-06-27

Applicant: Gi Chung Kwon ,  Hong Sik Byun ,  Sung Weon Lee ,  Hong Seub Kim ,  Sun Seok Han ,  Bu Jin Ko ,  Joung Sik Kim

Inventor： Gi Chung Kwon ,  Hong Sik Byun ,  Sung Weon Lee ,  Hong Seub Kim ,  Sun Seok Han ,  Bu Jin Ko ,  Joung Sik Kim

IPC: H01Q136

CPC classification number: H01Q21/24 ,  H01Q1/38 ,  H01Q9/27 ,  H01Q21/20

Abstract: Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate. According to a parallel resonance antenna, the geometrical structure enables to obtain a uniform plasma. Since the antenna has a small inductance, impedance matching is easy even at the VHF band. Also, at the resonance point, since the potential of the inner portions (Z1, Z2, Z3 and Z4) of the ground points of the antenna units is low, it becomes possible to decrease a non-desired sputtering phenomenon.

公开(公告)号：US06685800B2

公开(公告)日：2004-02-03

申请号：US10003195

申请日：2001-11-14

Applicant: Hong Seub Kim ,  Gi Chung Kwon ,  Sun Seok Han ,  Choong Won Lee ,  Sung Weon Lee ,  Hong Sik Byun

Inventor： Hong Seub Kim ,  Gi Chung Kwon ,  Sun Seok Han ,  Choong Won Lee ,  Sung Weon Lee ,  Hong Sik Byun

IPC: C23C1600

CPC classification number: H01J37/32522 ,  H01J37/321

Abstract: Disclosed is an apparatus for generating ICP, which has a heater having a hot wire as a heating source for heating elements in a chamber and inner wall of the chamber and also efficiently transfers heat of the heater through a heat transferring gas to the elements in the chamber and the inner wall of the chamber. According to the present invention, the elements in the chamber and the inner wall of the chamber can be heated up to a temperature of about 200° C., thereby reducing the adhesion of the by-product served as the source generating the undesirable particles. In addition, since the hot wire having a longer life span than the halogen lamp is used as heat radiating means, the life span of the apparatus is also increased.

Abstract translation: 公开了一种用于产生ICP的装置，其具有加热器，该加热器具有热丝作为加热室，用于加热腔室中的元件和腔室的内壁，并且还通过传热气体将加热器的热量有效地传递到 室和室的内壁。 根据本发明，室中的元件和室的内壁可被加热至约200℃的温度，从而降低了作为产生不期望的颗粒的源的副产物的粘附。 此外，由于使用寿命比卤素灯长的热丝作为散热装置，因此装置的使用寿命也增加。

公开(公告)号：US06770836B2

公开(公告)日：2004-08-03

申请号：US10100983

申请日：2002-03-19

Applicant: Gi-Chung Kwon ,  Hong-Sik Byun ,  Sung-Weon Lee ,  Hong-Seub Kim ,  Sun-Seok Han ,  Bu-Jin Ko ,  Joung-Sik Kim

Inventor： Gi-Chung Kwon ,  Hong-Sik Byun ,  Sung-Weon Lee ,  Hong-Seub Kim ,  Sun-Seok Han ,  Bu-Jin Ko ,  Joung-Sik Kim

IPC: B23K1000

CPC classification number: H01J37/321 ,  H01J37/32183 ,  H05H1/46

Abstract: An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.

Abstract translation: 一种用于等离子体源的阻抗匹配电路包括：第一网络，包括：第一线圈; 以及向所述第一线圈施加第一电压的RF电源; 和第二网络; 接地的第二线圈具有第二电压，第二电压低于第一电压; 第一和第二无功元件，第一和第二无功元件的一个端部分别连接到第二线圈的每个端部; 以及连接到第一和第二无功元件的另一端部的负载，负载的两个端部处的相位彼此不同。

公开(公告)号：US06530993B2

公开(公告)日：2003-03-11

申请号：US09793949

申请日：2001-02-27

Applicant: Chul Ju Hwang ,  Sung Weon Lee

Inventor： Chul Ju Hwang ,  Sung Weon Lee

IPC: C23C1600

CPC classification number: H01L21/67167 ,  H01L21/67781 ,  Y10S414/135

Abstract: A cluster tool for fabricating a semiconductor device includes: a transfer chamber having a wafer handling robot; a plurality of process chambers installed adjacent to each wall face of the transfer chamber; a loadlock chamber installed adjacent to different wall faces of the transfer chamber, in which a cassette is positioned to bring in and take out a wafer; and a cooling chamber installed at one side of a different wall face of the transfer chamber with an open-and-shut unit therebetween, the cooling chamber being provided with a wafer multiple-mounting unit having a plurality of wafer mounting plates for simultaneously mounting wafers which finishes undergoing processes in the process chamber and cooling them. Since it includes a fresh structure of wafer multiple-mounting unit, even though the plurality of process chambers of the cluster tool simultaneously proceed the fabrication process of a semiconductor device, the process bottle neck phenomenon as in the conventional art would not occur even though the wafer is delayed to be cooled. Consequently, the process time is shortened and thus the production cost of the semiconductor device can be reduced.

Abstract translation: 用于制造半导体器件的簇工具包括：具有晶片处理机器人的传送室; 与传送室的每个壁面相邻设置的多个处理室; 安装在传送室的不同壁面附近的装载室，其中盒被定位成带入和取出晶片; 以及冷却室，其安装在所述转移室的不同壁面的一侧，其间具有打开和关闭单元，所述冷却室设置有具有多个晶片安装板的晶片多重安装单元，所述晶片安装单元同时安装晶片 其完成在处理室中进行处理并冷却它们。 由于它包括晶片多重安装单元的新鲜结构，即使集群工具的多个处理室同时进行半导体器件的制造过程，也不会发生如传统技术中的工艺瓶颈现象，即使 晶片被延迟冷却。 因此，缩短了处理时间，可以降低半导体装置的制造成本。