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33 条记录 (耗时 0.018 秒)

    Precursor source mixtures
    2.
    发明授权
    Precursor source mixtures 有权
    前体源混合物

    公开(公告)号：US06984591B1

    公开(公告)日：2006-01-10

    申请号：US09553997

    申请日：2000-04-20

    申请人： Douglas A. Buchanan ,  Deborah Ann Neumayer

    发明人： Douglas A. Buchanan ,  Deborah Ann Neumayer

    IPC分类号： H01L21/31 ,  H01L21/44 ,  H01L23/48

    CPC分类号： H01L21/3142 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/42 ,  C23C16/4485 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/28194 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/823462 ,  H01L21/823828 ,  H01L21/823857 ,  H01L27/0805 ,  H01L28/65 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66181 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A precursor source mixture useful for CVD or ALD of a film comprising: at least one precursor composed of an element selected from the group consisting of Li, Na, K, Rb, Cs, Fr, Be, Mg, Ti, Zr, Hf, Sc, Y, La, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, P, Sb and Bi, to which is bound at least one ligand selected from the group consisting of hydride, alkyl, alkenyl, cycloalkenyl, aryl, alkyne, carbonyl, amido, imido, hydrazido, phosphido, nitrosyl, nitryl, nitrate, nitrile, halide, azide, alkoxy, siloxy, silyl, and halogenated, sulfonated or silyated derivatives thereof, which is dissolved, emulsified or suspended in an inert liquid selected from the group consisting of aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, ethers, aldehydes, ketones, acids, phenols, esters, amines, alkylnitrile, halogenated hydrocarbons, silyated hydrocarbons, thioethers, amines, cyanates, isocyanates, thiocyanates, silicone oils, nitroalkyl, alkylnitrate, and mixtures thereof. The precursor source mixture may be a solution, emulsion or suspension and may consist of a mixture of solid, liquid and gas phases which are distributed throughout the mixture.

    摘要翻译： 一种可用于CVD或ALD的膜的前体源混合物，其包含：至少一种由选自Li，Na，K，Rb，Cs，Fr，Be，Mg，Ti，Zr，Hf， Sc，Y，La，V，Nb，Ta，Cr，Mo，W，Mn，Re，Fe，Ru，Os，Co，Rh，Ir，Ni，Pd，Pt，Cu，Ag，Au，Zn，Cd， Hg，B，Al，Ga，In，Tl，Si，Ge，Sn，Pb，As，P，Sb和Bi中的至少一种配体，其结合至少一种选自氢化物，烷基，烯基，环烯基， 芳基，炔，羰基，酰胺基，亚氨基，酰基，硝基，硝基，腈，卤化物，叠氮化物，烷氧基，甲硅烷氧基，甲硅烷基和卤化的磺化或甲硅烷基化的衍生物，其溶解，乳化或悬浮于 惰性液体，选自脂族烃，芳族烃，醇，醚，醛，酮，酸，酚，酯，胺，烷腈，卤代烃，巯基烃，硫醚，胺，氰酸酯，异氰酸酯，硫氰酸酯， 硅油，硝基烷基，硝酸烷基酯及其混合物。 前体源混合物可以是溶液，乳液或悬浮液，并且可以由分布在整个混合物中的固体，液体和气相的混合物组成。

    Semiconductor surface treatment for epitaxial growth
    7.
    发明授权
    Semiconductor surface treatment for epitaxial growth 失效
    用于外延生长的半导体表面处理

    公开(公告)号：US07790566B2

    公开(公告)日：2010-09-07

    申请号：US12051366

    申请日：2008-03-19

    申请人： Jack Oon Chu ,  Deborah Ann Neumayer

    发明人： Jack Oon Chu ,  Deborah Ann Neumayer

    IPC分类号： H01L21/76

    CPC分类号： C30B25/18 ,  C30B29/08 ,  Y10S438/933

    摘要： A method is disclosed for preparing a surface of a Group III-Group V compound semiconductor for epitaxial deposition. The III-V semiconductor surface is treated with boron (B) at a temperature of between about 250° C. and about 350° C. A suitable form for supplying B for the surface treatment is diborane. The B treatment can be followed by epitaxial growth, for instance by a Group IV semiconductor, at temperatures similar to those of the B treatment. The method yields high quality heterojunction, suitable for fabricating a large variety of device structures.

    摘要翻译： 公开了制备用于外延沉积的III-V族化合物半导体的表面的方法。 III-V族半导体表面在约250℃至约350℃的温度下用硼（B）处理。用于供应B用于表面处理的合适形式是乙硼烷。 B处理可以在与B处理类似的温度下进行外延生长，例如通过IV族半导体。 该方法产生高质量异质结，适用于制造各种器件结构。