Abstract:
According to one embodiment of the present invention, a MOS transistor includes a semiconductor layer including a source region, a drain region, and a channel region disposed between the source region and the drain region. A gate structure is arranged above the channel regions. A source wiring structure is arranged above the source region and is connected to the source region. A drain wiring structure is arranged above the drain region and is connected to the drain region. The width of the source wiring structure is larger than the width of the drain wiring structure, and the height of the source wiring structure is smaller than the height of the drain wiring structure, or vice versa.
Abstract:
An integrated multiplexer circuit arrangement and an integrated latch circuit arrangement is disclosed. In one embodiment, a transformer is set up and connected up in such a way that it electrically decouples a data signal circuit and a clock signal circuit, and that it makes a clock signal of the clock signal circuit available as a control signal for the data signal circuit. The transformer includes two secondary-side end terminals directly coupled to the data signal circuit and a secondary-side center terminal coupled to a bias current source.
Abstract:
In accordance with an embodiment, a radio-frequency (RF) front-end for a radio configured to receive an RF signal at a first frequency includes an antenna port configured to be coupled to an antenna, and a notch filter having an input coupled to the antenna port. The notch filter is configured to reject one or more frequencies, such that the first frequency is a harmonic or intermodulation distortion product of the one or more frequencies. The RF front-end also includes a piezoelectric filter having an input coupled to an output of the notch filter and an output configured to be coupled to an RF amplifier. The piezoelectric filter has a pass band comprising the first frequency.
Abstract:
Embodiments of the invention relate to an integrated circuit comprising at least one functional unit configured to operate at a first clock frequency. The integrated circuit also comprises at least one first interconnect originating from a contact pad and leading to at least one frequency divider configured to receive a clock signal having a second frequency and generate one or more clock signals to operate the functional unit at the first frequency. The integrated circuit further comprises at least one second interconnect coupling an output of the frequency divider and an input of the functional unit, wherein a total length of the second wired interconnect is less than a total length of the first wired interconnects.
Abstract:
Embodiments of the invention relate to an integrated circuit comprising at least one functional unit configured to operate at a first clock frequency. The integrated circuit also comprises at least one first interconnect originating from a contact pad and leading to at least one frequency divider configured to receive a clock signal having a second frequency and generate one or more clock signals to operate the functional unit at the first frequency. The integrated circuit further comprises at least one second interconnect coupling an output of the frequency divider and an input of the functional unit, wherein a total length of the second wired interconnect is less than a total length of the first wired interconnects.
Abstract:
An integrated circuit having a filter apparatus for filtering a first symbol sequence is disclosed. The first symbol sequence has a predetermined symbol duration. The apparatus includes at least one delay device which is clocked in accordance with a clock, and configured to delay the first symbol sequence by a delay time. A relationship between the delay time of the delay device and a clock duration of the clocked delay device has a predetermined value which is not equal to the one.
Abstract:
An integrated circuit arrangement is disclosed. In one embodiment, the integrated circuit arrangement includes an output circuit having at least one first output connection which can provide a data signal, at least one first data output connection; and at least one first inductance connected between the at least one first output connection and the at least one data output connection.
Abstract:
A module and a method for manufacturing a module are disclosed. An embodiment of a module comprises a first semiconductor device, a frame arranged on the first semiconductor device, the frame comprising a cavity, and a second semiconductor device arranged on the frame wherein the second semiconductor device seals the cavity.
Abstract:
Embodiments of the invention relate to integrated circuits comprising inputs for receiving an input signal and a plurality of clock signals having a predetermined phase relationship. The integrated circuit may include a plurality of track-and-hold devices and a plurality of slicer devices. Signal outputs of two track-and-hold devices may be coupled to signal inputs of one slicer device, one of the two track-and-hold devices and the slicer device being coupled to a first input configured to receive a first clock signal and the other track-and-hold device being coupled to a second input being configured to receive a second clock signal.
Abstract:
According to one embodiment of the present invention, a MOS transistor includes a semiconductor layer including a source region, a drain region, and a channel region disposed between the source region and the drain region. A gate structure is arranged above the channel regions. A source wiring structure is arranged above the source region and is connected to the source region. A drain wiring structure is arranged above the drain region and is connected to the drain region. The width of the source wiring structure is larger than the width of the drain wiring structure, and the height of the source wiring structure is smaller than the height of the drain wiring structure, or vice versa.