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    EXPOSURE METHOD
    1.
    发明申请
    EXPOSURE METHOD 有权
    曝光方法

    公开(公告)号：US20100009294A1

    公开(公告)日：2010-01-14

    申请号：US12253235

    申请日：2008-10-16

    Applicant: Chiang-Lin Shih ,  Kuo-Yao Cho

    Inventor： Chiang-Lin Shih ,  Kuo-Yao Cho

    IPC: G03F7/00

    CPC classification number: G03F7/70466 ,  G03F7/70425 ,  G03F7/70558 ,  G03F7/70625

    Abstract: An exposure method is disclosed. A wafer coated with a photoresist layer having an exposure threshold dose is provided. The wafer has at least a central region and a peripheral region. Then, a compensating light beam having a first dose directs on the photoresist layer within the peripheral region. Next, a patterned light beam having a second dose is then projected, in a step-and-scan manner, onto the photoresist layer, thereby exposing the photoresist layer. The total dose of the first energy and the second energy is above than the exposure threshold dose.

    Abstract translation: 公开了曝光方法。 提供涂覆有具有暴露阈值剂量的光致抗蚀剂层的晶片。 晶片至少具有中心区域和周边区域。 然后，具有第一剂量的补偿光束指向周边区域内的光致抗蚀剂层。 接下来，将具有第二剂量的图案化光束以逐步扫描的方式投射到光致抗蚀剂层上，由此曝光光致抗蚀剂层。 第一能量和第二能量的总剂量高于暴露阈值剂量。

    LITHOGRAPHY RESOLUTION IMPROVING METHOD
    2.
    发明申请
    LITHOGRAPHY RESOLUTION IMPROVING METHOD 有权
    LITHOGRAPHY分辨率改进方法

    公开(公告)号：US20090233448A1

    公开(公告)日：2009-09-17

    申请号：US12119275

    申请日：2008-05-12

    Applicant: Kuo-Yao CHO ,  Wen-Bin WU ,  Ya-Chih WANG ,  Chiang-Lin SHIH ,  Chao-Wen LAY ,  Chih-Huang WU

    Inventor： Kuo-Yao CHO ,  Wen-Bin WU ,  Ya-Chih WANG ,  Chiang-Lin SHIH ,  Chao-Wen LAY ,  Chih-Huang WU

    IPC: H01L21/306

    CPC classification number: H01L21/32139 ,  H01L21/0337 ,  H01L21/0338

    Abstract: A method of improving lithography resolution on a semiconductor, including the steps of providing a substrate on which a protecting layer, a first etching layer and a photoresist layer are sequentially formed; patterning the photoresist layer to form an opening so as to partially reveal the first etching layer; implanting a first ion into the revealed first etching layer to form a first doped area; and implanting a second ion into the revealed first etching layer to form a second doped area, wherein the first doped area is independent from the second doped area is provided.

    Abstract translation: 一种改善半导体上的光刻分辨率的方法，包括提供其上依次形成保护层，第一蚀刻层和光致抗蚀剂层的基板的步骤; 图案化光致抗蚀剂层以形成开口，以便部分地露出第一蚀刻层; 将第一离子注入到所揭示的第一蚀刻层中以形成第一掺杂区域; 以及将第二离子注入到所揭示的第一蚀刻层中以形成第二掺杂区域，其中所述第一掺杂区域与所述第二掺杂区域无关。

    Method of forming a trench capacitor
    4.
    发明授权
    Method of forming a trench capacitor 有权
    形成沟槽电容器的方法

    公开(公告)号：US07915133B2

    公开(公告)日：2011-03-29

    申请号：US11953481

    申请日：2007-12-10

    Applicant: Kuo-Yao Cho ,  Wen-Bin Wu ,  Chiang-Lin Shih ,  Jen-Jui Huang

    Inventor： Kuo-Yao Cho ,  Wen-Bin Wu ,  Chiang-Lin Shih ,  Jen-Jui Huang

    IPC: H01L21/20

    CPC classification number: H01L29/945 ,  H01L29/66181

    Abstract: A method of forming a ring-type capacitor is provided. The method includes providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer defining a ring pattern; removing the substrate by using the patterned mask layer as a mask to form a ring-type trench in the substrate; the ring-type trench including an inner wall and an outer wall; and forming a capacitor structure on the inner wall and the outer wall of the ring-type trench.

    Abstract translation: 提供一种形成环型电容器的方法。 该方法包括提供基板; 在所述衬底上形成图案化掩模层，所述图案化掩模层限定环形图案; 通过使用图案化掩模层作为掩模去除衬底，以在衬底中形成环型沟槽; 所述环形沟槽包括内壁和外壁; 并在环形沟槽的内壁和外壁上形成电容器结构。

    METHOD OF FORMING A TRENCH CAPACITOR
    5.
    发明申请
    METHOD OF FORMING A TRENCH CAPACITOR 有权
    形成TRENCH电容器的方法

    公开(公告)号：US20080286934A1

    公开(公告)日：2008-11-20

    申请号：US11953481

    申请日：2007-12-10

    Applicant: Kuo-Yao CHO ,  Wen-Bin WU ,  Chiang-Lin SHIH ,  Jen-Jui HUANG

    Inventor： Kuo-Yao CHO ,  Wen-Bin WU ,  Chiang-Lin SHIH ,  Jen-Jui HUANG

    IPC: H01L21/02

    CPC classification number: H01L29/945 ,  H01L29/66181

    Abstract: A method of forming a ring-type capacitor is provided. The method includes providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer defining a ring pattern; removing the substrate by using the patterned mask layer as a mask to form a ring-type trench in the substrate; the ring-type trench including an inner wall and an outer wall; and forming a capacitor structure on the inner wall and the outer wall of the ring-type trench.

    Abstract translation: 提供一种形成环型电容器的方法。 该方法包括提供基板; 在所述衬底上形成图案化掩模层，所述图案化掩模层限定环形图案; 通过使用图案化掩模层作为掩模去除衬底，以在衬底中形成环型沟槽; 所述环形沟槽包括内壁和外壁; 并在环形沟槽的内壁和外壁上形成电容器结构。

    Exposure method
    7.
    发明授权
    Exposure method 有权
    曝光方法

    公开(公告)号：US07998660B2

    公开(公告)日：2011-08-16

    申请号：US12253235

    申请日：2008-10-16

    Applicant: Chiang-Lin Shih ,  Kuo-Yao Cho

    Inventor： Chiang-Lin Shih ,  Kuo-Yao Cho

    IPC: G03F7/26

    CPC classification number: G03F7/70466 ,  G03F7/70425 ,  G03F7/70558 ,  G03F7/70625

    Abstract: An exposure method is disclosed. A wafer coated with a photoresist layer having an exposure threshold dose is provided. The wafer has at least a central region and a peripheral region. Then, a compensating light beam having a first dose directs on the photoresist layer within the peripheral region. Next, a patterned light beam having a second dose is then projected, in a step-and-scan manner, onto the photoresist layer, thereby exposing the photoresist layer. The total dose of the first energy and the second energy is above than the exposure threshold dose.

    Abstract translation: 公开了曝光方法。 提供涂覆有具有暴露阈值剂量的光致抗蚀剂层的晶片。 晶片至少具有中心区域和周边区域。 然后，具有第一剂量的补偿光束指向周边区域内的光致抗蚀剂层。 接下来，将具有第二剂量的图案化光束以逐步扫描的方式投射到光致抗蚀剂层上，由此曝光光致抗蚀剂层。 第一能量和第二能量的总剂量高于暴露阈值剂量。

    Method of forming three-dimensional lithographic pattern
    10.
    发明申请
    Method of forming three-dimensional lithographic pattern 审中-公开
    形成三维光刻图案的方法

    公开(公告)号：US20070178410A1

    公开(公告)日：2007-08-02

    申请号：US11453764

    申请日：2006-06-14

    Applicant: Chiang-Lin Shih ,  Chih-Li Chen

    Inventor： Chiang-Lin Shih ,  Chih-Li Chen

    IPC: G03F7/20

    CPC classification number: G03F7/2002 ,  G03F1/50 ,  H01L21/0274 ,  H01L21/76807

    Abstract: A method of forming a three-dimensional lithographic pattern is provided. The method includes providing a substrate. A first photoresist layer is formed on the substrate. The first photoresist layer corresponds to a first exposure removal dose. A second photoresist layer is formed on the first photoresist layer. The second photoresist layer corresponds to a second exposure removal dose, which is different from the first exposure removal dose. A reticle with multiple regions of different light transmittances is provided. Through the reticle, the first and second photoresist layers are exposed to form a first removable region in the first photoresist layer and a second removable region in the second photoresist layer. The second removable region is different from the first removable region. The first and second photoresist layers are then developed to remove the first and second removable regions.

    Abstract translation: 提供了形成三维光刻图案的方法。 该方法包括提供基板。 在基板上形成第一光致抗蚀剂层。 第一光致抗蚀剂层对应于第一曝光去除剂量。 在第一光致抗蚀剂层上形成第二光致抗蚀剂层。 第二光致抗蚀剂层对应于与第一曝光去除剂量不同的第二曝光去除剂量。 提供具有不同透光率的多个区域的掩模版。 通过掩模版，第一和第二光致抗蚀剂层被暴露以在第一光致抗蚀剂层中形成第一可移除区域，并在第二光致抗蚀剂层中形成第二可除去区域。 第二可移除区域与第一可移除区域不同。 然后显影第一和第二光致抗蚀剂层以除去第一和第二可除去区域。

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