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1.发明申请METHOD FOR DEPOSITING MICROCRYSTALLINE SILICON AND MONITOR DEVICE OF PLASMA ENHANCED DEPOSITION 有权沉积微晶硅的方法和等离子体增强沉积的监测装置公开(公告)号：US20110136269A1
公开(公告)日：2011-06-09
申请号：US12758698
申请日：2010-04-12
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/02532 , H01L21/0262
摘要： A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Hα and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Hα within an allowed range of a target value for improving film depositing rate.
摘要翻译： 公开了一种用于沉积微晶硅膜的方法，包括分别执行开路和闭环等离子体增强沉积工艺，而不需要和调制工艺参数。 通过开环等离子体增强沉积工艺沉积膜直到所需的膜结晶度，然后执行监测物质等离子体光谱强度SiH *和Hα的闭环等离子体增强沉积过程，并调制等离子体增强沉积过程的工艺参数，从而导致 物质浓度稳定化，其控制在目标值的允许范围内的SiH *和Hα的强度变化，以提高成膜速率。
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公开(公告)号：US20090283042A1
公开(公告)日：2009-11-19
申请号：US12194173
申请日：2008-08-19
申请人： Chen-Chung DU , Muh-Wang Liang , Ching-Huei Wu , Ming-Tung Chiang
发明人： Chen-Chung DU , Muh-Wang Liang , Ching-Huei Wu , Ming-Tung Chiang
IPC分类号： C23C16/00
CPC分类号： C23C16/4586 , H01L21/68785 , H01L21/68792
摘要： A susceptor positioning and supporting device of a vacuum apparatus for carrying and elevating a substrate in a vacuum apparatus chamber is provided. The device has a lateral positioning and supporting mechanism to perform clamping and positioning at a side of a susceptor, preventing the susceptor from slanting inside the vacuum apparatus chamber. The lateral positioning and supporting mechanism and the susceptor thereby forms a closed beam support mechanism capable of reducing load suspension deformation at the ends of the large susceptor. The device improves planarity of the large susceptor and the substrate, and in turn improves uniformity of a thin film deposited on the substrate.
摘要翻译： 提供了一种用于在真空设备室中承载和升高基板的真空装置的基座定位和支撑装置。 该装置具有横向定位和支撑机构，以在基座的一侧执行夹持和定位，从而防止基座在真空装置室内倾斜。 横向定位和支撑机构和基座由此形成能够减小大型基座端部的载荷悬挂变形的闭合梁支撑机构。 该装置提高了大基座和基板的平面度，进而改善了沉积在基板上的薄膜的均匀性。
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公开(公告)号：US07449091B2
公开(公告)日：2008-11-11
申请号：US11073655
申请日：2005-03-08
申请人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
发明人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
CPC分类号： C25D21/04 , C25D5/003 , C25D5/08 , C25D7/123 , C25D17/001
摘要： A wafer electroplating apparatus with a function of bubble removal includes an electroplating bath main body and a fixing device. The electroplating bath main body has an inlet device, a first de-bubble tank and at least an air hole. The fixing device has a second de-bubble tank and an outer shell. The air hole guides gathering bubbles to an outside of the electroplating bath main body so as to remove bubbles. The fixing device can be put into the first de-bubble tank within the electroplating bath main body to form a de-bubble area and is separated easily therefrom to clean the wafer electroplating apparatus. The electroplating bath main body further includes a baffle for rectifying electroplating solution flow before entering the inlet device.
摘要翻译： 具有除泡功能的晶片电镀装置包括电镀浴主体和定影装置。 电镀浴主体具有入口装置，第一去泡箱和至少一个空气孔。 定影装置具有第二去泡箱和外壳。 气孔将聚集气泡引导到电镀浴主体的外部，以便除去气泡。 定影装置可以放入电镀槽主体内的第一个脱泡槽中，形成去气泡区域，并容易地分离，以清洁晶片电镀装置。 电镀浴主体还包括用于在进入入口装置之前对电镀液流进行整流的挡板。
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公开(公告)号：US20060137974A1
公开(公告)日：2006-06-29
申请号：US11073655
申请日：2005-03-08
申请人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
发明人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
IPC分类号： C25B15/08
CPC分类号： C25D21/04 , C25D5/003 , C25D5/08 , C25D7/123 , C25D17/001
摘要： A wafer electroplating apparatus with a function of bubble removal includes an electroplating bath main body and a fixing device. The electroplating bath main body has an inlet device, a first de-bubble tank and at least an air hole. The fixing device has a second de-bubble tank and an outer shell. The air hole guides gathering bubbles to an outside of the electroplating bath main body so as to remove bubbles. The fixing device can be put into the first de-bubble tank within the electroplating bath main body to form a de-bubble area and is separated easily therefrom to clean the wafer electroplating apparatus. The electroplating bath main body further includes a baffle for rectifying electroplating solution flow before entering the inlet device.
摘要翻译： 具有除泡功能的晶片电镀装置包括电镀浴主体和定影装置。 电镀浴主体具有入口装置，第一去泡箱和至少一个空气孔。 定影装置具有第二去泡箱和外壳。 气孔将聚集气泡引导到电镀浴主体的外部，以便除去气泡。 定影装置可以放入电镀槽主体内的第一个脱泡槽中，形成去气泡区域，并容易地分离，以清洁晶片电镀装置。 电镀浴主体还包括用于在进入入口装置之前对电镀液流进行整流的挡板。
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公开(公告)号：US20050051023A1
公开(公告)日：2005-03-10
申请号：US10764586
申请日：2004-01-27
CPC分类号： B30B1/38 , B30B15/068
摘要： The present invention relates to a compress and position apparatus with positioning, orientating functions and providing more uniform pressing force compliantly. The compress and position apparatus comprises a guiding column, a base, a housing, a seat, a annular portion and a pressing plate. The base has a cylinder, a plurality of locating pins and a convex portion. The annular portion has a through hole and a plurality of locating holes. The guiding column and the cylinder are disposed in the housing provided with an opening for the guiding column passing therethrough. The housing is mounted on the base and passed through a through hole of the annular portion and disposed in a cavity of the seat. A plane on the housing abuts a plane on the cavity to prevent the rotation of the housing. The guiding column is combined with the seat. The locating pin is inserted into the locating hole. The pressing plate engages the annular portion. Thus the guiding column is moved up and down by the gas supply device. The convex portion biases the pressing plate to exert force on the substrate.
摘要翻译： 本发明涉及具有定位，定向功能并且提供更均匀的按压力的压缩和定位装置。 压缩和定位装置包括导向柱，基座，壳体，座椅，环形部分和压板。 基座具有圆柱体，多个定位销和凸起部分。 环形部分具有通孔和多个定位孔。 引导柱和圆柱体设置在壳体中，该壳体设置有用于引导柱通过的开口。 壳体安装在基座上并穿过环形部分的通孔并设置在座椅的空腔中。 壳体上的平面与空腔上的平面抵接以防止壳体旋转。 引导柱与座椅结合。 定位销插入定位孔。 压板与环形部分接合。 因此，引导塔由气体供给装置上下移动。 凸起部分偏压压板以在基底上施加力。
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公开(公告)号：US06302626B1
公开(公告)日：2001-10-16
申请号：US09488277
申请日：2000-01-20
申请人： Chen-Chung Du , Szu-Han Hu , Te-Hui Yang , Chun-Hsien Liu
发明人： Chen-Chung Du , Szu-Han Hu , Te-Hui Yang , Chun-Hsien Liu
IPC分类号： H02K4100
CPC分类号： H02K41/0358
摘要： A fixed support for voice coil motor comprises a coil, hollow plate, opening, structural reinforcement beam, and a plurality of pins. The pins extruding from the hollow plate allows the coil to wind around them. The opening, which locates on the center of the hollow plate, distributes stress concentration around the center. The structural reinforcement beam, which extrudes from an edge of the hollow plate, improves stiffness of the fixed support, thereby allowing the hollow plate to be made thinner.
摘要翻译： 音圈电机的固定支架包括线圈，中空板，开口，结构加强梁和多个销。 从中空板挤出的销允许线圈缠绕在它们周围。 位于中空板中心的开口分布在中心周围的应力集中。 从中空板的边缘挤出的结构加强梁提高固定支撑件的刚度，从而使中空板制成更薄。
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公开(公告)号：US5098253A
公开(公告)日：1992-03-24
申请号：US587984
申请日：1990-09-25
申请人： Chen-Chung Du , Jinn-Fa Wu
发明人： Chen-Chung Du , Jinn-Fa Wu
IPC分类号： B25J15/04
CPC分类号： B25J15/04 , Y10T403/30 , Y10T403/7009
摘要： An automatic tool-exchanging device can be set on a robot for exchanging tools. It mainly comprises an upper and lower assemblies, and an engaging mechanism. The engaging mechanism includes a cam, which is to be driven with a double-acting pneumatic cylinder assembly. When the double-acting pneumatic cylinder is turned on, the upper and lower assemblies will be engaged together and generate a self-lock effect for safety; when the double-acting pneumatic cylinder is turned off, the two assemblies will be disengaged from each other.
摘要翻译： 可以在机器人上设置自动换刀装置来进行交换工具。 它主要包括上下组件和接合机构。 接合机构包括用双作用气动缸组件驱动的凸轮。 当双作用气动缸打开时，上下组件将被接合在一起，并产生自锁效果以达到安全; 当双作用气动缸关闭时，两个组件将彼此分离。
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8.发明授权Method for depositing microcrystalline silicon and monitor device of plasma enhanced deposition 有权沉积微晶硅的方法和等离子体增强沉积监测装置公开(公告)号：US08435803B2
公开(公告)日：2013-05-07
申请号：US12758698
申请日：2010-04-12
IPC分类号： H01L21/00
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/02532 , H01L21/0262
摘要： A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Hα and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Hα within an allowed range of a target value for improving film depositing rate.
摘要翻译： 公开了一种用于沉积微晶硅膜的方法，包括分别执行开路和闭环等离子体增强沉积工艺，而不需要和调制工艺参数。 通过开环等离子体增强沉积工艺沉积膜直到所需的膜结晶度，然后执行监测物质等离子体光谱强度SiH *和Halpha的闭环等离子体增强沉积工艺，并调制等离子体增强沉积过程的工艺参数， 物质浓度稳定化，其控制SiH *和Halpha在目标值的允许范围内的强度变化，以提高成膜速率。
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公开(公告)号：US07721673B2
公开(公告)日：2010-05-25
申请号：US11700023
申请日：2007-01-31
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/3244 , H01J37/32009 , H01J37/32596
摘要： The present invention provides a hollow cathode discharging apparatus including a hollow anode electrode, a hollow cathode electrode insulatedly fixed in the hollow anode electrode, a gas distribution pipe fixed in the hollow cathode electrode. The hollow anode electrode and the hollow cathode electrode are formed with anode openings and cathode openings respectively. Defined by the gas distribution pipe and the hollow cathode electrode and along the axis thereof is a spiral pathway winding through the cathode openings, so as to form a plurality of continuous and communicated reaction chambers. The gas distribution pipe is disposed with gas separation apertures communicated and adapted to introduce a reactive gas into the reaction chambers. The communicated reaction chambers enable uniform distribution of the reactive gas and thereby facilitate scale-up of the apparatus in axial. Accordingly, the present invention overcomes drawbacks of the prior art.
摘要翻译： 本发明提供一种中空阴极喷射装置，其包括中空阳极电极，绝缘地固定在中空阳极电极中的中空阴极电极，固定在中空阴极电极中的气体分配管。 中空阳极电极和中空阴极电极分别形成有阳极开口和阴极开口。 由气体分配管和空心阴极电极及其轴线限定为通过阴极开口卷绕的螺旋路径，以形成多个连续且连通的反应室。 气体分配管设置有连通并适于将反应性气体引入反应室的气体分离孔。 所传送的反应室能够均匀分布反应气体，从而有助于装置在轴向上放大。 因此，本发明克服了现有技术的缺陷。
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公开(公告)号：US20090090616A1
公开(公告)日：2009-04-09
申请号：US12015999
申请日：2008-01-17
申请人： CHEN-CHUNG DU , JEN-RONG HUANG , MUH-WANG LIANG , CHIH-CHEN CHANG , SHENG-LANG LEE , CHING-HUEI WU , CHAN-HSING LO
发明人： CHEN-CHUNG DU , JEN-RONG HUANG , MUH-WANG LIANG , CHIH-CHEN CHANG , SHENG-LANG LEE , CHING-HUEI WU , CHAN-HSING LO
IPC分类号： C23C14/32
摘要： A system and a method for plasma enhanced thin film deposition are disclosed, in which the system comprises a plasma enhanced thin film deposition apparatus and a plasma process monitoring device. The plasma enhanced thin film deposition apparatus receives pulsed power and a reactive gas, whereby plasma discharging occurs to ionize the reactive gas into a plurality of radicals for thin film deposition. The plasma process monitoring device comprises an optical emission spectroscopy (OES) and a pulsed plasma modulation device, in which the OES detects spectrum intensities of the radicals and the pulsed plasma modulation device calculates a spectrum intensity ratio of the radicals so as to modulate the plasma duty time of pulsed power, thereby high deposition rate as well as real-time monitoring on thin film deposition quality can be achieved.
摘要翻译： 公开了一种用于等离子体增强薄膜沉积的系统和方法，其中该系统包括等离子体增强薄膜沉积装置和等离子体处理监测装置。 等离子体增强薄膜沉积装置接收脉冲功率和反应性气体，由此发生等离子体放电，以将反应气体电离成多个自由基用于薄膜沉积。 等离子体处理监测装置包括光发射光谱（OES）和脉冲等离子体调制装置，其中OES检测自由基的光谱强度，并且脉冲等离子体调制装置计算自由基的光谱强度比以调制等离子体 可以实现脉冲功率的占空比，从而实现高沉积速率以及对薄膜沉积质量的实时监测。
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