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1.发明申请PLASMA ENHANCED ATOMIC LAYER DEPOSITION APPARATUS AND THE CONTROLLING METHOD THEREOF 审中-公开等离子体增强原子层沉积装置及其控制方法公开(公告)号：US20120070590A1
公开(公告)日：2012-03-22
申请号：US12970403
申请日：2010-12-16
申请人： Jen-Rong Huang , Tean-Mu Shen , Kang-Feng Lee , Chin-Chong Chiang , Sheng-Lang Lee , Jung-Chen Ho , Ching-Chiun Wang
发明人： Jen-Rong Huang , Tean-Mu Shen , Kang-Feng Lee , Chin-Chong Chiang , Sheng-Lang Lee , Jung-Chen Ho , Ching-Chiun Wang
IPC分类号： C23C16/448 , C23C16/02
CPC分类号： C23C16/45536 , C23C16/45551
摘要： This prevent disclosure provides a plasma enhanced atomic layer deposition apparatus and the controlling method thereof. The plasma enhanced atomic layer deposition apparatus includes: a plurality of reaction chambers, each of the reaction chambers having a first reaction space and a second reaction space; an adjustable partition unit controlled to separate or communicate the first and the second reaction spaces; and a plurality of heating carriers respectively disposed in the plurality of reaction chambers. The method manipulates the movement of the partition plate, leading to separation or communication between the first and second reaction spaces, so as to avoid the interference or inter-reaction between process gases and the resultant particles contaminating the substrates.
摘要翻译： 这种防止公开提供等离子体增强原子层沉积装置及其控制方法。 等离子体增强原子层沉积装置包括：多个反应室，每个反应室具有第一反应空间和第二反应空间; 被调节以分离或通信第一和第二反应空间的可调分隔单元; 以及分别设置在多个反应室中的多个加热载体。 该方法操纵分隔板的运动，导致第一和第二反应空间之间的分离或连通，以避免处理气体和所得颗粒污染基板之间的干扰或相互作用。
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2.发明授权公开(公告)号：US06382945B1
公开(公告)日：2002-05-07
申请号：US09321543
申请日：1999-05-28
申请人： Li-Wei Chen , Muh-Wang Liang , Sheng-Lang Lee , Kuang-Yuan Hung
发明人： Li-Wei Chen , Muh-Wang Liang , Sheng-Lang Lee , Kuang-Yuan Hung
IPC分类号： B29C4502
CPC分类号： B29C45/021 , Y10S425/228
摘要： A resin plunging apparatus for molding resin to seal an electronic device, in which a ball screw is rotated to move a movable base plate and two load elements at the movable base plate, enabling a plunger holder which is supported on the load elements to be moved with the movable base plate along guide bars, so that plungers which are securely mounted on the plunger holder are positively smoothly forced into cavities in upper and lower molds to plunge resin tablets.
摘要翻译： 一种用于模制树脂以密封电子装置的树脂插入装置，其中滚珠丝杠被旋转以使可移动基板和两个负载元件移动在可移动基板处，使得支撑在负载元件上的柱塞保持器能够移动 使可动基板沿着导杆移动，使得牢固地安装在柱塞保持器上的柱塞能够被积极平滑地压入上模具和下模具中的空腔中以插入树脂片。
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3.发明授权Method for depositing microcrystalline silicon and monitor device of plasma enhanced deposition 有权沉积微晶硅的方法和等离子体增强沉积监测装置公开(公告)号：US08435803B2
公开(公告)日：2013-05-07
申请号：US12758698
申请日：2010-04-12
IPC分类号： H01L21/00
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/02532 , H01L21/0262
摘要： A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Hα and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Hα within an allowed range of a target value for improving film depositing rate.
摘要翻译： 公开了一种用于沉积微晶硅膜的方法，包括分别执行开路和闭环等离子体增强沉积工艺，而不需要和调制工艺参数。 通过开环等离子体增强沉积工艺沉积膜直到所需的膜结晶度，然后执行监测物质等离子体光谱强度SiH *和Halpha的闭环等离子体增强沉积工艺，并调制等离子体增强沉积过程的工艺参数， 物质浓度稳定化，其控制SiH *和Halpha在目标值的允许范围内的强度变化，以提高成膜速率。
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4.发明申请Electroplating apparatus with functions of voltage detection and flow rectification 有权具有电压检测和流量整流功能的电镀设备公开(公告)号：US20050051425A1
公开(公告)日：2005-03-10
申请号：US10743496
申请日：2003-12-23
申请人： Chih-Cheng Wang , Chih-Yuan Tseng , Jen-Rong Huang , Sheng-Lang Lee , Chia-Ming Chen , Pang-Ming Chiang
发明人： Chih-Cheng Wang , Chih-Yuan Tseng , Jen-Rong Huang , Sheng-Lang Lee , Chia-Ming Chen , Pang-Ming Chiang
CPC分类号： C25D5/08 , C25D17/001 , C25D17/008 , C25D21/10
摘要： The present invention provides a fountain-type electroplating apparatus with functions of voltage detection and flow rectification, comprising: an electroplating tank, a rectification device, and an overflow tank, wherein the electroplating tank is positioned inside the overflow tank, and the rectification device is arranged under the electroplating tank, in addition, the electroplating tank is composed of a shell, a cathode electrode, and an mesh shaped anode. The apparatus of the present invention further comprises: a power supplier, a switcher, a plurality of detection circuits, and a plurality of connecting line, which is used for monitoring the same.
摘要翻译： 本发明提供一种具有电压检测和整流功能的喷泉型电镀设备，包括：电镀槽，整流装置和溢流槽，其中电镀槽位于溢流槽内，整流装置为 另外，电镀槽由电镀槽构成，由电解槽，阴极电极和网状阳极构成。 本发明的装置还包括：电源，切换器，多个检测电路和多个连接线，用于对其进行监视。
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公开(公告)号：US20090090616A1
公开(公告)日：2009-04-09
申请号：US12015999
申请日：2008-01-17
申请人： CHEN-CHUNG DU , JEN-RONG HUANG , MUH-WANG LIANG , CHIH-CHEN CHANG , SHENG-LANG LEE , CHING-HUEI WU , CHAN-HSING LO
发明人： CHEN-CHUNG DU , JEN-RONG HUANG , MUH-WANG LIANG , CHIH-CHEN CHANG , SHENG-LANG LEE , CHING-HUEI WU , CHAN-HSING LO
IPC分类号： C23C14/32
摘要： A system and a method for plasma enhanced thin film deposition are disclosed, in which the system comprises a plasma enhanced thin film deposition apparatus and a plasma process monitoring device. The plasma enhanced thin film deposition apparatus receives pulsed power and a reactive gas, whereby plasma discharging occurs to ionize the reactive gas into a plurality of radicals for thin film deposition. The plasma process monitoring device comprises an optical emission spectroscopy (OES) and a pulsed plasma modulation device, in which the OES detects spectrum intensities of the radicals and the pulsed plasma modulation device calculates a spectrum intensity ratio of the radicals so as to modulate the plasma duty time of pulsed power, thereby high deposition rate as well as real-time monitoring on thin film deposition quality can be achieved.
摘要翻译： 公开了一种用于等离子体增强薄膜沉积的系统和方法，其中该系统包括等离子体增强薄膜沉积装置和等离子体处理监测装置。 等离子体增强薄膜沉积装置接收脉冲功率和反应性气体，由此发生等离子体放电，以将反应气体电离成多个自由基用于薄膜沉积。 等离子体处理监测装置包括光发射光谱（OES）和脉冲等离子体调制装置，其中OES检测自由基的光谱强度，并且脉冲等离子体调制装置计算自由基的光谱强度比以调制等离子体 可以实现脉冲功率的占空比，从而实现高沉积速率以及对薄膜沉积质量的实时监测。
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6.发明授权Electroplating apparatus with functions of voltage detection and flow rectification 有权具有电压检测和流量整流功能的电镀设备公开(公告)号：US07238265B2
公开(公告)日：2007-07-03
申请号：US10743496
申请日：2003-12-23
申请人： Chih-Cheng Wang , Chih-Yuan Tseng , Jen-Rong Huang , Sheng-Lang Lee , Chia-Ming Chen , Pang-Ming Chiang
发明人： Chih-Cheng Wang , Chih-Yuan Tseng , Jen-Rong Huang , Sheng-Lang Lee , Chia-Ming Chen , Pang-Ming Chiang
CPC分类号： C25D5/08 , C25D17/001 , C25D17/008 , C25D21/10
摘要： The present invention provides a fountain-type electroplating apparatus with functions of voltage detection and flow rectification, comprising: an electroplating tank, a rectification device, and an overflow tank, wherein the electroplating tank is positioned inside the overflow tank, and the rectification device is arranged under the electroplating tank, in addition, the electroplating tank is composed of a shell, a cathode electrode, and an mesh shaped anode. The apparatus of the present invention further comprises: a power supplier, a switcher, a plurality of detection circuits, and a plurality of connecting line, which is used for monitoring the same.
摘要翻译： 本发明提供一种具有电压检测和整流功能的喷泉型电镀设备，包括：电镀槽，整流装置和溢流槽，其中电镀槽位于溢流槽内，整流装置为 另外，电镀槽由电镀槽构成，由电解槽，阴极电极和网状阳极构成。 本发明的装置还包括：电源，切换器，多个检测电路和多个连接线，用于对其进行监视。
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7.发明申请METHOD FOR DEPOSITING MICROCRYSTALLINE SILICON AND MONITOR DEVICE OF PLASMA ENHANCED DEPOSITION 有权沉积微晶硅的方法和等离子体增强沉积的监测装置公开(公告)号：US20110136269A1
公开(公告)日：2011-06-09
申请号：US12758698
申请日：2010-04-12
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/02532 , H01L21/0262
摘要： A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Hα and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Hα within an allowed range of a target value for improving film depositing rate.
摘要翻译： 公开了一种用于沉积微晶硅膜的方法，包括分别执行开路和闭环等离子体增强沉积工艺，而不需要和调制工艺参数。 通过开环等离子体增强沉积工艺沉积膜直到所需的膜结晶度，然后执行监测物质等离子体光谱强度SiH *和Hα的闭环等离子体增强沉积过程，并调制等离子体增强沉积过程的工艺参数，从而导致 物质浓度稳定化，其控制在目标值的允许范围内的SiH *和Hα的强度变化，以提高成膜速率。
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