公开(公告)号：US09653472B2

公开(公告)日：2017-05-16

申请号：US14657663

申请日：2015-03-13

申请人： Woong Lee ,  Chae Ho Kim ,  Kyong Won An ,  Joon Suk Lee ,  Woo Sung Lee ,  Hun Hyeong Lim

发明人： Woong Lee ,  Chae Ho Kim ,  Kyong Won An ,  Joon Suk Lee ,  Woo Sung Lee ,  Hun Hyeong Lim

IPC分类号： H01L27/115 ,  H01L27/11582 ,  H01L29/792 ,  H01L27/11578 ,  H01L27/105 ,  H01L27/11565 ,  H01L27/11556 ,  H01L27/11519

CPC分类号： H01L27/11582 ,  H01L27/1052 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11578 ,  H01L29/7926

摘要： According to example embodiments, a method of fabricating a semiconductor device includes alternately stacking interlayer insulating layers and intermediate layers on a substrate, forming openings passing through the interlayer insulating layers and the intermediate layers to form recessed regions in the substrate, forming first epitaxial layers on recessed surfaces in the recessed regions, and forming second epitaxial layers using the first epitaxial layers as seed layers. The second epitaxial layers fill the recessed regions and extend above the substrate.

公开(公告)号：US20090186959A1

公开(公告)日：2009-07-23

申请号：US12073725

申请日：2008-03-10

申请人： Chae-Ho Kim

发明人： Chae-Ho Kim

IPC分类号： C08K3/36

CPC分类号： C09D7/70 ,  C08K3/041 ,  C09D4/06 ,  C09D5/24 ,  Y10S977/778 ,  Y10S977/779

摘要： A water soluble photo-curable antistatic resin compound has developed to improve the wear resistance and high transparency comprising: 5˜15 wt % of fine conductive particles containing carbon nanotubes, 0.1˜5 wt % of fumed silica, 10˜20 wt % of water soluble acrylate based oligomer, 20˜75 wt % of mono-functional monomer or multi-functional monomer, 0.1˜5 wt % of photo-polymerization initiator, 0.1˜5 wt % of additive including at least one selected from a group consisting of adhesion enhancer, dispersing agent, defoaming agent, leveling agent; and 50˜150 parts by weight of pure water relative to the total 100 weight of the above ingredients. The water soluble photo-curable antistatic resin compound is coated to the conductive hard tile having double-layer lamination, such as a general rubber or PVC to improve the wear resistance. The antistatic resin compound has properties sufficient to overcome the restrictions of conventionally available conductive tile flooring, and express at least 80% of the original colors of the flooring.

摘要翻译： 开发了水溶性光固化抗静电树脂化合物，以提高耐磨性和高透明度，包括：5〜15重量％的含有碳纳米管的细导电颗粒，0.1〜5重量％的热解法二氧化硅，10〜20重量％的水 可溶于丙烯酸酯的低聚物，20〜75重量％的单官能单体或多官能单体，0.1〜5重量％的光聚合引发剂，0.1〜5重量％的添加剂，包括选自粘合剂 增强剂，分散剂，消泡剂，流平剂; 和50〜150重量份的纯水相对于上述成分的100重量份。 将水溶性光固化抗静电树脂化合物涂覆到具有双层层压的导电性硬质瓦，如普通橡胶或PVC，以提高耐磨性。 抗静电树脂化合物具有足以克服传统可用的导电瓷砖地板的限制的性能，并且表现出地板原始颜色的至少80％。

公开(公告)号：US07816417B2

公开(公告)日：2010-10-19

申请号：US12073725

申请日：2008-03-10

申请人： Chae-Ho Kim

发明人： Chae-Ho Kim

IPC分类号： C08K3/04 ,  C08K3/36

CPC分类号： C09D7/70 ,  C08K3/041 ,  C09D4/06 ,  C09D5/24 ,  Y10S977/778 ,  Y10S977/779

摘要： A water soluble photo-curable antistatic resin compound has developed to improve the wear resistance and high transparency comprising: 5˜15 wt % of fine conductive particles containing carbon nanotubes, 0.1˜5 wt % of fumed silica, 10˜20 wt % of water soluble acrylate based oligomer, 20˜75 wt % of mono-functional monomer or multi-functional monomer, 0.1˜5 wt % of photo-polymerization initiator, 0.1˜5 wt % of additive including at least one selected from a group consisting of adhesion enhancer, dispersing agent, defoaming agent, leveling agent; and 50˜150 parts by weight of pure water relative to the total 100 weight of the above ingredients. The water soluble photo-curable antistatic resin compound is coated to the conductive hard tile having double-layer lamination, such as a general rubber or PVC to improve the wear resistance. The antistatic resin compound has properties sufficient to overcome the restrictions of conventionally available conductive tile flooring, and express at least 80% of the original colors of the flooring.

摘要翻译： 开发了水溶性光固化抗静电树脂化合物以提高耐磨性和高透明度，包括：5〜15重量％的含有碳纳米管的细导电颗粒，0.1〜5重量％的热解法二氧化硅，10〜20重量％的水 可溶于丙烯酸酯的低聚物，20〜75重量％的单官能单体或多官能单体，0.1〜5重量％的光聚合引发剂，0.1〜5重量％的添加剂，包括选自由粘合剂组成的组中的至少一种 增强剂，分散剂，消泡剂，流平剂; 和相对于100重量份的上述成分为50〜150重量份的纯水。 将水溶性光固化抗静电树脂化合物涂覆到具有双层层压的导电性硬质瓦，如普通橡胶或PVC，以提高耐磨性。 抗静电树脂化合物具有足以克服传统可用的导电瓷砖地板的限制的性能，并且表现出地板原始颜色的至少80％。

公开(公告)号：US20160056169A1

公开(公告)日：2016-02-25

申请号：US14657663

申请日：2015-03-13

申请人： Woong LEE ,  Chae Ho KIM ,  Kyong Won AN ,  Joon Suk LEE ,  Woo Sung LEE ,  Hun Hyeong LIM

发明人： Woong LEE ,  Chae Ho KIM ,  Kyong Won AN ,  Joon Suk LEE ,  Woo Sung LEE ,  Hun Hyeong LIM

IPC分类号： H01L27/115

CPC分类号： H01L27/11582 ,  H01L27/1052 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11578 ,  H01L29/7926

摘要： According to example embodiments, a method of fabricating a semiconductor device includes alternately stacking interlayer insulating layers and intermediate layers on a substrate, forming openings passing through the interlayer insulating layers and the intermediate layers to form recessed regions in the substrate, forming first epitaxial layers on recessed surfaces in the recessed regions, and forming second epitaxial layers using the first epitaxial layers as seed layers. The second epitaxial layers fill the recessed regions and extend above the substrate.

摘要翻译： 根据示例性实施例，制造半导体器件的方法包括在衬底上交替层叠层间绝缘层和中间层，形成穿过层间绝缘层和中间层的开口，以在衬底中形成凹陷区域，形成第一外延层 凹陷区域中的凹陷表面，以及使用第一外延层作为晶种层形成第二外延层。 第二外延层填充凹陷区域并在衬底上方延伸。

公开(公告)号：US20140054675A1

公开(公告)日：2014-02-27

申请号：US13945336

申请日：2013-07-18

申请人： Chae-Ho Kim ,  Sung-Hae Lee ,  Toshiro Nakanishi ,  Dong-Woo Kim

发明人： Sung-Hae LEE ,  Toshiro NAKANISHI ,  Dong-Woo KIM ,  Chae-Ho KIM

IPC分类号： H01L29/792 ,  H01L29/66

CPC分类号： H01L29/7926 ,  H01L27/11582 ,  H01L29/66666 ,  H01L29/66833

摘要： According to example embodiments, a vertical type semiconductor device includes a pillar structure on a substrate. The pillar structure includes a semiconductor pattern and a channel pattern. The semiconductor pattern includes an impurity region. A first word line structure faces the channel pattern and is horizontally extended while surrounding the pillar structure. A second word line structure has one side facing the impurity region of the semiconductor pattern and another side facing the substrate. A common source line is provided at a substrate portion adjacent to a sidewall end portion of the second word line structure.

摘要翻译： 根据示例性实施例，垂直型半导体器件包括在衬底上的柱结构。 柱结构包括半导体图案和沟道图案。 半导体图案包括杂质区域。 第一字线结构面向通道图案，并且在围绕柱结构的同时水平延伸。 第二字线结构具有面向半导体图案的杂质区域和面向衬底的另一侧的一侧。 在与第二字线结构的侧壁端部相邻的衬底部分处提供公共源极线。