Invention Grant
- Patent Title: Semiconductor device, method of fabricating the semiconductor device, and method of forming epitaxial layer
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Application No.: US14657663Application Date: 2015-03-13
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Publication No.: US09653472B2Publication Date: 2017-05-16
- Inventor: Woong Lee , Chae Ho Kim , Kyong Won An , Joon Suk Lee , Woo Sung Lee , Hun Hyeong Lim
- Applicant: Woong Lee , Chae Ho Kim , Kyong Won An , Joon Suk Lee , Woo Sung Lee , Hun Hyeong Lim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pirece, P.L.C.
- Priority: KR10-2014-0109921 20140822
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L27/11582 ; H01L29/792 ; H01L27/11578 ; H01L27/105 ; H01L27/11565 ; H01L27/11556 ; H01L27/11519

Abstract:
According to example embodiments, a method of fabricating a semiconductor device includes alternately stacking interlayer insulating layers and intermediate layers on a substrate, forming openings passing through the interlayer insulating layers and the intermediate layers to form recessed regions in the substrate, forming first epitaxial layers on recessed surfaces in the recessed regions, and forming second epitaxial layers using the first epitaxial layers as seed layers. The second epitaxial layers fill the recessed regions and extend above the substrate.
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