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    Method for fabricating epitaxial cobalt-disilicide layers using cobalt-nitride thin film
    1.
    发明授权
    Method for fabricating epitaxial cobalt-disilicide layers using cobalt-nitride thin film 失效
    使用氮化钴薄膜制造外延二硫化钴层的方法

    公开(公告)号：US07105443B2

    公开(公告)日：2006-09-12

    申请号：US11008671

    申请日：2004-12-10

    申请人： Byung-Tae Ahn ,  Sun-Il Kim ,  Seung-Ryul Lee ,  Jong-Ho Park

    发明人： Byung-Tae Ahn ,  Sun-Il Kim ,  Seung-Ryul Lee ,  Jong-Ho Park

    IPC分类号： H01L21/44

    CPC分类号： H01L29/665 ,  H01L21/28518

    摘要： A method for fabricating epitaxial cobalt disilicide layers uses a cobalt-nitride thin film. Epitaxial cobalt disilicide (CoSi2) layers are fabricated using a cobalt-nitride thin film in a salicide process, wherein a silicide is formed on source/drain regions and a polysilicon gate electrode of a nanoscale MOS transistor. Epitaxial CoSi2 layers can be fabricated on source/drain regions and a gate electrode of a silicon substrate using a cobalt-nitride thin film, without the formation of an interlayer between a cobalt layer and the silicon substrate.

    摘要翻译： 用于制造外延二硫化钴层的方法使用氮化钴薄膜。 在硅化物工艺中使用氮化钴薄膜制造外延二硅化钴（CoSi 2 N）层，其中硅化物形成在纳米级MOS晶体管的源极/漏极区域和多晶硅栅极电极上。 可以在源极/漏极区域和使用氮化钴薄膜的硅衬底的栅电极上制造外延CoSi 2层，而不在钴层和硅衬底之间形成中间层。

    Method for fabricating epitaxial cobalt-disilicide layers using cobalt-nitride thin film
    2.
    发明申请
    Method for fabricating epitaxial cobalt-disilicide layers using cobalt-nitride thin film 失效
    使用氮化钴薄膜制造外延二硫化钴层的方法

    公开(公告)号：US20050130417A1

    公开(公告)日：2005-06-16

    申请号：US11008671

    申请日：2004-12-10

    申请人： Byung-Tae Ahn ,  Sun-Il Kim ,  Seung-Ryul Lee ,  Jong-Ho Park

    发明人： Byung-Tae Ahn ,  Sun-Il Kim ,  Seung-Ryul Lee ,  Jong-Ho Park

    IPC分类号： H01L21/24 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/44 ,  H01L21/4763

    CPC分类号： H01L29/665 ,  H01L21/28518

    摘要： A method for fabricating epitaxial cobalt disilicide layers uses a cobalt-nitride thin film. Epitaxial cobalt disilicide (CoSi2) layers are fabricated using a cobalt-nitride thin film in a salicide process, wherein a silicide is formed on source/drain regions and a polysilicon gate electrode of a nanoscale MOS transistor. Epitaxial CoSi2 layers can be fabricated on source/drain regions and a gate electrode of a silicon substrate using a cobalt-nitride thin film, without the formation of an interlayer between a cobalt layer and the silicon substrate.

    摘要翻译： 用于制造外延二硫化钴层的方法使用氮化钴薄膜。 在硅化物工艺中使用氮化钴薄膜制造外延二硅化钴（CoSi 2 N）层，其中硅化物形成在纳米级MOS晶体管的源极/漏极区域和多晶硅栅极电极上。 可以在源极/漏极区域和使用氮化钴薄膜的硅衬底的栅电极上制造外延CoSi 2层，而不在钴层和硅衬底之间形成中间层。

    Bioflavonoids as plasma high density lipoprotein level increasing agent
    3.
    发明授权
    Bioflavonoids as plasma high density lipoprotein level increasing agent 有权
    生物类黄酮作为血浆高密度脂蛋白增高剂

    公开(公告)号：US6133241A

    公开(公告)日：2000-10-17

    申请号：US177448

    申请日：1998-10-22

    申请人： Song-Hae Bok ,  Tae-Sook Jeong ,  Surk-Sik Moon ,  Yong-Kook Kwon ,  Byung-Hwa Hyun ,  Chul-Ho Lee ,  Yang-Kyu Choi ,  Myung-Sook Choi ,  Sung-Gyu Kim ,  Og-Sung Moon ,  Sae-Bom Lee ,  Eun-Sook Lee ,  Byung-Tae Ahn

    发明人： Song-Hae Bok ,  Tae-Sook Jeong ,  Surk-Sik Moon ,  Yong-Kook Kwon ,  Byung-Hwa Hyun ,  Chul-Ho Lee ,  Yang-Kyu Choi ,  Myung-Sook Choi ,  Sung-Gyu Kim ,  Og-Sung Moon ,  Sae-Bom Lee ,  Eun-Sook Lee ,  Byung-Tae Ahn

    IPC分类号： A23L1/30 ,  A23L2/00 ,  A61K31/352 ,  A61K31/70

    CPC分类号： A61K31/7048 ,  A23L2/00 ,  A23L33/105 ,  A61K31/352 ,  A23V2002/00

    摘要： A method for increasing the plasma high density lipoprotein(HDL) level in a mammal comprises administering a bioflavonoid of formula(I) or plant extract containing same thereto: ##STR1## wherein, R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5.sub.7 R.sup.6, R.sup.7, R.sup.8 and R.sup.9 are each independently hydrogen; a hydroxy group; a C.sub.1-9 alkoxy group optionally substituted with one or more substituents selected from the group consisting of a hydroxy, C.sub.1-5 alkoxy, aryloxy, and phenyl group substituted with 1 to 3 substituents selected from the group consisting of a hydroxy, alkoxy, aryloxy, halogen, nitro and amido group; a C.sub.5-9 cycloalkyloxy group substituted with 1 to 3 substituents selected from the group consisting of a hydroxy, alkoxy, aryloxy, halogen, nitro and amido group; a C.sub.5-9 cycloalkylcarbonyloxy group substituted with 1 to 3 substituents selected from the group consisting of a hydroxy, alkoxy, aryloxy, halogen, nitro and amido group; a C.sub.2-10 or C.sub.16-18 acyloxy group optionally substituted with one or more substituents selected from the group consisting of a hydroxy, C.sub.1-5 alkoxy, aryloxy, and phenyl group substituted with 1 to 3 substituents selected from the group consisting of a hydroxy, alkoxy, aryloxy, halogen and nitro group; a rutinosyl group; or a rhaminosyl group; andX is a single or double bond.

    摘要翻译： 一种用于增加哺乳动物血浆高密度脂蛋白（HDL）水平的方法包括施用式（I）的生物类黄酮或含有其的植物提取物：其中，R1，R2，R3，R4，R57，R6，R7，R8和R9 各自独立地为氢; 羟基; 任选地被一个或多个选自羟基，C 1-5烷氧基，芳氧基和被1至3个选自羟基，烷氧基，芳氧基的取代基取代的苯基所取代的C1-9烷氧基 ，卤素，硝基和酰氨基; 被1至3个选自羟基，烷氧基，芳氧基，卤素，硝基和酰氨基的取代基取代的C5-9环烷氧基; 被选自羟基，烷氧基，芳氧基，卤素，硝基和酰胺基的1〜3个取代基取代的C5-9环烷基羰基氧基; 任选被一个或多个选自羟基，C 1-5烷氧基，芳氧基和被1至3个取代基取代的取代基取代的C 2-10或C16-18酰氧基，所述取代基选自羟基 ，烷氧基，芳氧基，卤素和硝基; 芸香酰基; 或者一个去甲基团; X是单键或双键。

    Transparent light-emitting conductive layer and electron emission device including transparent light-emitting conductive layer
    5.
    发明申请
    Transparent light-emitting conductive layer and electron emission device including transparent light-emitting conductive layer 审中-公开
    透明的发光导电层和包括透明的发光导电层的电子发射器件

    公开(公告)号：US20060017368A1

    公开(公告)日：2006-01-26

    申请号：US11182788

    申请日：2005-07-18

    申请人： Jae-Woo Bae ,  Do-Hyung Park ,  Byung-Tae Ahn

    发明人： Jae-Woo Bae ,  Do-Hyung Park ,  Byung-Tae Ahn

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： H01J63/04 ,  H01J63/02

    摘要： A transparent light-emitting conductive layer includes a Transparent Conductive Oxide (TCO) and a dopant. An electron emission device having the transparent light-emitting conductive layer includes: a front substrate; a first electrode arranged on the front surface, the first electrode having a transparent light-emitting conductive layer including a Transparent Conductive Oxide (TCO) and a dopant; a fluorescent layer arranged on the first electrode; a rear substrate spaced apart from and facing the front substrate; an electron emission region arranged on the rear substrate; and a second electrode adapted to control electron emission in the electron emission region. The electron emission device can be used as an electron emission display device or a back-light unit. The transparent light-emitting conductive layer induces additional light emission using excess electrons that did not participate in the light emission in a fluorescent layer and thus results in improvements in color purity, reproduction range of colors, brightness, and color rendering properties when used in a device.

    摘要翻译： 透明的发光导电层包括透明导电氧化物（TCO）和掺杂剂。 具有透明发光导电层的电子发射器件包括：前衬底; 布置在前表面上的第一电极，所述第一电极具有包括透明导电氧化物（TCO）和掺杂剂的透明发光导电层; 布置在所述第一电极上的荧光层; 与前基板间隔开并面向前基板的后基板; 布置在后衬底上的电子发射区; 以及适于控制电子发射区域中的电子发射的第二电极。 电子发射装置可以用作电子发射显示装置或背光装置。 透明的发光导电层使用不参与荧光层中的发光的过剩电子引起附加的发光，从而导致色彩纯度的提高，颜色的再现范围，亮度和显色性，当用于 设备。

    Process for preparing a polycrystalline silicon thin film
    6.
    发明授权
    Process for preparing a polycrystalline silicon thin film 有权
    制备多晶硅薄膜的方法

    公开(公告)号：US06528361B1

    公开(公告)日：2003-03-04

    申请号：US09639212

    申请日：2000-08-14

    申请人： Byung-Tae Ahn ,  Do-Kyung Kim ,  Jong-Hee Kim ,  Jeong-No Lee ,  Yoon-Chang Kim

    发明人： Byung-Tae Ahn ,  Do-Kyung Kim ,  Jong-Hee Kim ,  Jeong-No Lee ,  Yoon-Chang Kim

    IPC分类号： H01L210084

    CPC分类号： H01L21/02667 ,  C23C16/56 ,  H01L21/2022

    摘要： The present invention relates to a process for preparing a polycrystalline silicon thin film comprising a step of microwave annealing and crystallization of an amorphous thin film of silicon semiconductor, silicon semiconductor added with impurities, IV family semiconductor comprising Si alloy such as Si1−xGex, III-V family and II-VI family semiconductor. The process for preparing polycrystalline silicon thin film of the present invention comprises the steps of: immersing a washed substrate into a deposition equipment and heating the substrate; depositing an amorphous or microcrystalline silicon thin film on the substrate; and, annealing the deposited thin film employing microwave for crystallization.

    摘要翻译： 本发明涉及一种制备多晶硅薄膜的方法，该方法包括微硅退火和结晶硅半导体非晶薄膜，加入杂质的硅半导体以及包含诸如Si1-xGex，III -V家族和II-VI族半导体。 本发明的多晶硅薄膜的制备方法包括以下步骤：将洗涤的基材浸入沉积设备中并加热基底; 在衬底上沉积非晶或微晶硅薄膜; 并使用微波进行结晶退火沉积的薄膜。