公开(公告)号：US06492212B1

公开(公告)日：2002-12-10

申请号：US09972172

申请日：2001-10-05

申请人： MeiKei Ieong ,  Edward J. Nowak

发明人： MeiKei Ieong ,  Edward J. Nowak

IPC分类号： H01L210084

CPC分类号： H01L29/7831 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66484 ,  H01L29/66795 ,  H01L29/785

摘要： The present invention provides a double gate transistor and a method for forming the same that facilitates the formation of different transistors having different threshold voltages. The embodiments of the present invention form transistors having different body widths. By forming double gate transistors with different body widths, the preferred embodiment forms double gate transistors that have different threshold voltages, without adding excessive process complexity. The preferred embodiment of the present invention is implemented using a fin type double gated structure. In a fin type structure, the double gates are formed on each side of the body, with the body being disposed horizontally between the gates.

摘要翻译： 本发明提供一种双栅极晶体管及其形成方法，其有助于形成具有不同阈值电压的不同晶体管。 本发明的实施例形成具有不同体宽的晶体管。 通过形成具有不同体宽度的双栅极晶体管，优选实施例形成具有不同阈值电压的双栅晶体管，而不增加过多的工艺复杂性。 本发明的优选实施例使用翅片式双门控结构来实现。 在翅片型结构中，双门形成在主体的每一侧上，其中主体被水平地设置在门之间。

公开(公告)号：US06528361B1

公开(公告)日：2003-03-04

申请号：US09639212

申请日：2000-08-14

申请人： Byung-Tae Ahn ,  Do-Kyung Kim ,  Jong-Hee Kim ,  Jeong-No Lee ,  Yoon-Chang Kim

发明人： Byung-Tae Ahn ,  Do-Kyung Kim ,  Jong-Hee Kim ,  Jeong-No Lee ,  Yoon-Chang Kim

IPC分类号： H01L210084

CPC分类号： H01L21/02667 ,  C23C16/56 ,  H01L21/2022

摘要： The present invention relates to a process for preparing a polycrystalline silicon thin film comprising a step of microwave annealing and crystallization of an amorphous thin film of silicon semiconductor, silicon semiconductor added with impurities, IV family semiconductor comprising Si alloy such as Si1−xGex, III-V family and II-VI family semiconductor. The process for preparing polycrystalline silicon thin film of the present invention comprises the steps of: immersing a washed substrate into a deposition equipment and heating the substrate; depositing an amorphous or microcrystalline silicon thin film on the substrate; and, annealing the deposited thin film employing microwave for crystallization.

摘要翻译： 本发明涉及一种制备多晶硅薄膜的方法，该方法包括微硅退火和结晶硅半导体非晶薄膜，加入杂质的硅半导体以及包含诸如Si1-xGex，III -V家族和II-VI族半导体。 本发明的多晶硅薄膜的制备方法包括以下步骤：将洗涤的基材浸入沉积设备中并加热基底; 在衬底上沉积非晶或微晶硅薄膜; 并使用微波进行结晶退火沉积的薄膜。