公开(公告)号：US20120007258A1

公开(公告)日：2012-01-12

申请号：US12939677

申请日：2010-11-04

申请人： Jae-Geun Oh ,  Seung-Joon Jeon ,  Jin-Ku Lee ,  Mi-Ri Lee ,  Bong-Seok Jeon

发明人： Jae-Geun Oh ,  Seung-Joon Jeon ,  Jin-Ku Lee ,  Mi-Ri Lee ,  Bong-Seok Jeon

IPC分类号： H01L23/522 ,  H01L21/3205

CPC分类号： H01L29/7813 ,  H01L21/743 ,  H01L27/10876 ,  H01L27/10885 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/41741 ,  H01L29/66666 ,  H01L29/7827

摘要： A method for fabricating a semiconductor device includes forming a plurality of bodies that are each isolated from another by a trench and each include a diffusion barrier region with a sidewall exposed to the trench, forming a doped layer gap-filling the trench, forming a sidewall junction at the exposed sidewall of the diffusion barrier region by annealing the doped layer, and forming a conductive line coupled with the sidewall junction to fill the trench.

摘要翻译： 一种制造半导体器件的方法包括：形成多个通过沟槽与另一个隔离的主体，并且每个都包括具有暴露于沟槽的侧壁的扩散阻挡区域，形成填充沟槽的掺杂层间隙，形成侧壁 通过退火掺杂层而在扩散阻挡区域的暴露的侧壁处形成连接，并且形成与侧壁接合部连接以填充沟槽的导电线。

公开(公告)号：US08748265B2

公开(公告)日：2014-06-10

申请号：US13463108

申请日：2012-05-03

申请人： Heung-Jae Cho ,  Bong-Seok Jeon

发明人： Heung-Jae Cho ,  Bong-Seok Jeon

IPC分类号： H01L21/336

CPC分类号： H01L23/481 ,  H01L21/743 ,  H01L27/108 ,  H01L27/10885 ,  H01L29/66666 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a punch stop region formed in a substrate; a plurality of buried bit lines formed over the substrate; a plurality of pillar structures formed over the buried bit lines; a plurality of word lines extending to intersect the buried bit lines and being in contact with the pillar structures; and an isolation layer isolating the word lines from the buried bit lines.

摘要翻译： 半导体器件包括：形成在衬底中的冲压停止区域; 形成在所述基板上的多个掩埋位线; 形成在所述掩埋位线之上的多个柱结构; 多个字线延伸以与埋置的位线相交并与柱结构接触; 以及将字线与掩埋位线隔离的隔离层。

公开(公告)号：US20130161832A1

公开(公告)日：2013-06-27

申请号：US13463108

申请日：2012-05-03

申请人： Heung-Jae CHO ,  Bong-Seok Jeon

发明人： Heung-Jae CHO ,  Bong-Seok Jeon

IPC分类号： H01L23/535 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/743 ,  H01L27/108 ,  H01L27/10885 ,  H01L29/66666 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a punch stop region formed in a substrate; a plurality of buried bit lines formed over the substrate; a plurality of pillar structures formed over the buried bit lines; a plurality of word lines extending to intersect the buried bit lines and being in contact with the pillar structures; and an isolation layer isolating the word lines from the buried bit lines.

摘要翻译： 半导体器件包括：形成在衬底中的冲压停止区域; 形成在所述基板上的多个掩埋位线; 形成在所述掩埋位线之上的多个柱结构; 多个字线延伸以与埋置的位线相交并与柱结构接触; 以及将字线与掩埋位线隔离的隔离层。

公开(公告)号：US20120302047A1

公开(公告)日：2012-11-29

申请号：US13230931

申请日：2011-09-13

申请人： Mi-Ri LEE ,  Jae-Geun Oh ,  Seung-Joon Jeon ,  Jin-Ku Lee ,  Bong-Seok Jeon

发明人： Mi-Ri LEE ,  Jae-Geun Oh ,  Seung-Joon Jeon ,  Jin-Ku Lee ,  Bong-Seok Jeon

IPC分类号： H01L21/265

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L29/66666 ,  H01L29/7827

摘要： A method for fabricating a semiconductor device includes forming a structure having first surfaces at a height above a second surface, which is provided between the first surfaces, forming a first silicon layer on the structure, performing a tilt ion implantation process on the first silicon layer to form a crystalline region and an amorphous region, forming a second silicon layer on the amorphous region, removing the second silicon layer and the first silicon layer until a part of the second surface is exposed, thereby forming an etch barrier, and etching using the etch barrier to form an open part that exposes a part of a sidewall of the structure.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在所述第一面之间形成具有位于第二面以上的高度的第一表面的结构，在所述结构上形成第一硅层，对所述第一硅层进行倾斜离子注入工序 以形成晶体区域和非晶区域，在非晶区域上形成第二硅层，去除第二硅层和第一硅层，直到第二表面的一部分露出，从而形成蚀刻阻挡层，并使用 蚀刻阻挡层以形成暴露结构的侧壁的一部分的开放部分。

公开(公告)号：US08673754B2

公开(公告)日：2014-03-18

申请号：US13494288

申请日：2012-06-12

申请人： Seung-Mi Lee ,  Yun Hyuck Ji ,  Beom-Yong Kim ,  Bong-Seok Jeon

发明人： Seung-Mi Lee ,  Yun Hyuck Ji ,  Beom-Yong Kim ,  Bong-Seok Jeon

IPC分类号： H01L21/425

CPC分类号： H01L29/78 ,  H01L21/26506 ,  H01L21/823462 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66651 ,  H01L29/7833

摘要： A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the monocrystalline silicon-containing substrate and forming, under the gate oxide layer, a germanium-rich region in which the germanium is concentrated, by performing a plasma oxidation process; and crystallizing the germanium-rich region by performing an annealing process.

摘要翻译： 制造半导体器件的方法包括将锗离子注入到单晶硅的衬底中; 在所述单晶含硅衬底的表面上形成栅极氧化物层，并且在所述栅极氧化物层下，通过进行等离子体氧化处理，形成锗浓缩的锗富集区; 并通过进行退火处理使富锗的区域结晶。

公开(公告)号：US08354342B2

公开(公告)日：2013-01-15

申请号：US12939677

申请日：2010-11-04

申请人： Jae-Geun Oh ,  Seung-Joon Jeon ,  Jin-Ku Lee ,  Mi-Ri Lee ,  Bong-Seok Jeon

发明人： Jae-Geun Oh ,  Seung-Joon Jeon ,  Jin-Ku Lee ,  Mi-Ri Lee ,  Bong-Seok Jeon

IPC分类号： H01L23/522

CPC分类号： H01L29/7813 ,  H01L21/743 ,  H01L27/10876 ,  H01L27/10885 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/41741 ,  H01L29/66666 ,  H01L29/7827

摘要： A method for fabricating a semiconductor device includes forming a plurality of bodies that are each isolated from another by a trench and each include a diffusion barrier region with a sidewall exposed to the trench, forming a doped layer gap-filling the trench, forming a sidewall junction at the exposed sidewall of the diffusion barrier region by annealing the doped layer, and forming a conductive line coupled with the sidewall junction to fill the trench.

摘要翻译： 一种制造半导体器件的方法包括：形成多个通过沟槽与另一个隔离的主体，并且每个都包括具有暴露于沟槽的侧壁的扩散阻挡区域，形成填充沟槽的掺杂层间隙，形成侧壁 通过退火掺杂层而在扩散阻挡区域的暴露的侧壁处形成连接，并且形成与侧壁接合部连接以填充沟槽的导电线。

公开(公告)号：US20130240957A1

公开(公告)日：2013-09-19

申请号：US13494288

申请日：2012-06-12

申请人： Seung-Mi LEE ,  Yun Hyuck JI ,  Beom-Yong KIM ,  Bong-Seok JEON

发明人： Seung-Mi LEE ,  Yun Hyuck JI ,  Beom-Yong KIM ,  Bong-Seok JEON

IPC分类号： H01L21/265 ,  H01L29/78

CPC分类号： H01L29/78 ,  H01L21/26506 ,  H01L21/823462 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66651 ,  H01L29/7833

摘要： A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the monocrystalline silicon-containing substrate and forming, under the gate oxide layer, a germanium-rich region in which the germanium is concentrated, by performing a plasma oxidation process; and crystallizing the germanium-rich region by performing an annealing process.

摘要翻译： 制造半导体器件的方法包括将锗离子注入到单晶硅的衬底中; 在所述单晶含硅衬底的表面上形成栅极氧化物层，并且在所述栅极氧化物层下，通过进行等离子体氧化处理，形成锗浓缩的锗富集区; 并通过进行退火处理使富锗的区域结晶。