公开(公告)号：US06594409B2

公开(公告)日：2003-07-15

申请号：US09838709

申请日：2001-04-18

申请人： Birendra Dutt ,  James Chan

发明人： Birendra Dutt ,  James Chan

IPC分类号： G02B612

CPC分类号： G02B6/12021 ,  G02B6/12014 ,  G02B6/4249

摘要： An optical component is formed on a silicon on insulator (SOI) substrate and has an array waveguide that demultiplexes an input light signal into N channels and provides that light signal to a corresponding set of N waveguide structures formed on a surface of the SOI substrate. The N waveguide structures provide the N channels of light to N optical detectors. Each optical detector is bonded to a surface of a corresponding one of the waveguide structures. The N channels of light pass through the N waveguide structures and are coupled into the N optical detectors so that light from a corresponding channel of the array waveguide is coupled into a corresponding optical detector and converted into an electrical signal.

公开(公告)号：US5867290A

公开(公告)日：1999-02-02

申请号：US752211

申请日：1996-11-19

申请人： Birendra Dutt ,  Manouher Naraghi ,  James Chan

发明人： Birendra Dutt ,  Manouher Naraghi ,  James Chan

IPC分类号： G01J3/28 ,  H04J14/00 ,  H04J14/02

CPC分类号： G01J3/2846 ,  H04J14/005 ,  H04J14/02

摘要： Methods and apparati for spatially encoding and decoding spread spectrum communication signals using broad band light sources are disclosed. The encoding algorithms involve the use of orthogonal spatial wavelets, which are preferably discrete attenuation functions of light from different sources so that the discrete attenuation function is imposed upon the spectrum of the light source. The function may be used either merely for providing an encoded channel or by providing a second mask that may be, for example, the complement of the discrete attenuation function so that the light beam is discrete with the first attenuation function.

摘要翻译： 公开了使用宽带光源对空间编码和解码扩频通信信号的方法和装置。 编码算法涉及使用正交空间小波，其优选地是来自不同源的光的离散衰减函数，使得离散衰减函数被施加在光源的光谱上。 该功能可以仅用于提供编码信道，或者可以通过提供可以是例如离散衰减函数的互补的第二掩模，使得光束与第一衰减函数离散。

公开(公告)号：US08052908B2

公开(公告)日：2011-11-08

申请号：US12114373

申请日：2008-05-02

申请人： Martin C. Peckerar ,  Mario Dagenais ,  Birendra Dutt ,  John D. Barry ,  Michael D. Messina, Jr. ,  Yves Ngu

发明人： Martin C. Peckerar ,  Mario Dagenais ,  Birendra Dutt ,  John D. Barry ,  Michael D. Messina, Jr. ,  Yves Ngu

IPC分类号： B29C33/40

CPC分类号： G03F7/70433 ,  G03F1/50 ,  G03F1/54

摘要： A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam “writing”. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.

摘要翻译： 纳米光刻掩模包括沉积在其上形成有规则的亚波长孔径阵列的掩模基板上的导电光学不透明材料层。 在入射到掩模上的光下，在亚波长孔径阵列穿孔的层中的等离子体激发产生足够强度的高分辨率远场辐射图，以在传播到晶片上时暴露光致抗蚀剂。 掩模的填充因子，即总孔面积与总掩模面积的比率可能导致通过FIB或电子束“写入”的掩模制造通过量的显着增加。 该面具证明了在集成电路设计的晶圆上印刷纳米尺寸和形状的相干清晰特征的缺陷弹性和能力。

公开(公告)号：US09653639B2

公开(公告)日：2017-05-16

申请号：US13368162

申请日：2012-02-07

申请人： Birendra Dutt

发明人： Birendra Dutt

IPC分类号： H01L21/00 ,  H01L31/109 ,  H01L29/165 ,  H01L31/18 ,  H01S5/026 ,  H01S5/10 ,  H01S5/30 ,  H01S5/32 ,  H01S5/227 ,  H01S5/02 ,  H01S5/20

CPC分类号： H01L31/109 ,  H01L29/165 ,  H01L31/1804 ,  H01L31/1812 ,  H01S5/021 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/1071 ,  H01S5/1082 ,  H01S5/2063 ,  H01S5/2272 ,  H01S5/3027 ,  H01S5/3201 ,  Y02E10/547 ,  Y02P70/521

摘要： The subject matter disclosed herein relates to formation of silicon germanium devices with tensile strain. Tensile strain applied to a silicon germanium device in fabrication may improve performance of a silicon germanium laser or light detector.

公开(公告)号：US20090201475A1

公开(公告)日：2009-08-13

申请号：US12114409

申请日：2008-05-02

申请人： MARTIN C. PECKERAR ,  MARIO DAGENAIS ,  BIRENDRA DUTT ,  JOHN D. BARRY ,  MICHAEL D. MESSINA, JR. ,  YVES NGU

发明人： MARTIN C. PECKERAR ,  MARIO DAGENAIS ,  BIRENDRA DUTT ,  JOHN D. BARRY ,  MICHAEL D. MESSINA, JR. ,  YVES NGU

IPC分类号： G03B27/42 ,  G03B27/32

CPC分类号： G03F7/70433 ,  G03F1/50 ,  G03F1/54

摘要： A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.

摘要翻译： 用于超高分辨率纳米光刻的步进系统采用光刻掩模，其包括其中形成有周期性的亚波长孔径阵列的导电光学不透明材料层。 暴露于波长在197nm-248nm范围内的光的光刻掩膜中的等离激元激发产生足够强度的高分辨率远场辐射图，以使晶片上的光刻胶曝光。 步进系统显示了对于掩模缺陷的弹性和在纳米尺寸（45nm-500nm））和用于集成电路设计的晶片上的各种形状的相干清晰特征的印记能力。 可以调整步进系统以对离开掩模的最高等离子体场的平面进行成像。

公开(公告)号：US20090068570A1

公开(公告)日：2009-03-12

申请号：US12114373

申请日：2008-05-02

申请人： MARTIN C. PECKERAR ,  MARIO DAGENAIS ,  BIRENDRA DUTT ,  JOHN D. BARRY ,  MICHAEL D. MESSINA, JR. ,  YVES NGU

发明人： MARTIN C. PECKERAR ,  MARIO DAGENAIS ,  BIRENDRA DUTT ,  JOHN D. BARRY ,  MICHAEL D. MESSINA, JR. ,  YVES NGU

IPC分类号： G03F1/00 ,  B29C35/02

CPC分类号： G03F7/70433 ,  G03F1/50 ,  G03F1/54

摘要： A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam “writing”. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.

摘要翻译： 纳米光刻掩模包括沉积在其上形成有规则的亚波长孔径阵列的掩模基板上的导电光学不透明材料层。 在入射到掩模上的光下，在亚波长孔径阵列穿孔的层中的等离子体激发产生足够强度的高分辨率远场辐射图，以在传播到晶片上时暴露光致抗蚀剂。 掩模的填充因子，即总孔面积与总掩模面积的比率可能导致通过FIB或电子束“写入”的掩模制造通过量的显着增加。 该面具证明了在集成电路设计的晶圆上印刷纳米尺寸和形状的相干清晰特征的缺陷弹性和能力。

公开(公告)号：US07215845B1

公开(公告)日：2007-05-08

申请号：US11336441

申请日：2006-01-20

申请人： James K. Chan ,  Birendra Dutt

发明人： James K. Chan ,  Birendra Dutt

IPC分类号： G02B6/293 ,  G02B6/36

CPC分类号： G02B6/43 ,  G02B6/12002 ,  G02B6/28

摘要： An optical interconnect architecture provides three dimensional optical interconnects, with the optical interconnects provided along a plane such as a wafer or a substrate. One or more integrated circuits is provided on a second “electronic” plane that is spaced from the optical interconnect plane. Signals from the circuit on the electronic plane are coupled to the optical interconnect plane using various strategies, including metal or optical interlayer interconnects extending perpendicular to the optical plane. Once on the optical interconnect plane, the signals from the circuits on the electronic plane are propagated optically.

摘要翻译： 光学互连架构提供三维光学互连，其中沿着诸如晶片或基板的平面提供的光学互连。 在与光学互连平面间隔开的第二“电子”平面上提供一个或多个集成电路。 来自电子平面上的电路的信号使用各种策略耦合到光学互连平面，包括垂直于光学平面延伸的金属或光学层间互连。 一旦在光学互连平面上，来自电子平面上的电路的信号被光学地传播。

公开(公告)号：US06236483B1

公开(公告)日：2001-05-22

申请号：US09126217

申请日：1998-07-30

申请人： Birendra Dutt ,  Manouher Naraghi ,  James K. Chan

发明人： Birendra Dutt ,  Manouher Naraghi ,  James K. Chan

IPC分类号： H04J1408

CPC分类号： H04K1/04 ,  H04J13/10 ,  H04J14/007 ,  H04K1/006

摘要： An optical fiber communications system using spread spectrum code division multiple access techniques to achieve better bandwidth utilization. A transmitting user in the system encodes the optical signal using a first coding mask, and a receiving user decodes the received signal using two decoding masks, all of the masks having lengths N. The first mask is divided into two sections of lengths N/2 each, one of the sections defining a first sub-code of length N/2, while the other section blocks light. Each of the second and third masks is also divided into two sections, which correspond to the two sections of the first mask. The section of the second mask corresponding to the coded section of the first mask has a second code that is identical to the first code, and the section of the second mask corresponding to the blocked section of the first mask is also blocked. The section of the third mask corresponding to coded section of the first mask has a third code that is complementary to the first code, and the section of the third mask corresponding to the blocked section of the first mask is also blocked. Some users on the system have masks in which the first of the two sections are blocked and the second of the two sections are coded, while other users have masks in which the second of the two sections are blocked and the first of the two sections are coded. The first codes used to code the encoding masks are selected from a set of unipolar codes that are derived from a set of balanced bipolar orthogonal codes.

摘要翻译： 一种采用扩频码分多址技术的光纤通信系统，实现更好的带宽利用。 系统中的发送用户使用第一编码掩码对光信号进行编码，并且接收用户使用两个解码掩码对所接收的信号进行解码，所有掩码具有长度N.第一掩码被分成长度为N / 2的两个部分 每个部分中的一个限定长度为N / 2的第一子代码，而另一部分阻挡光。 第二和第三掩模中的每一个也被分成两部分，其对应于第一掩模的两个部分。 对应于第一掩模的编码部分的第二掩码的部分具有与第一代码相同的第二代码，并且与第一掩码的被阻止部分对应的第二掩码的部分也被阻止。 对应于第一掩模的编码部分的第三掩码的部分具有与第一代码互补的第三代码，并且与第一掩码的被阻止部分对应的第三掩码的部分也被阻塞。 系统中的一些用户具有屏蔽，其中两个部分中的第一部分被阻塞，并且两个部分中的第二部分被编码，而其他用户具有掩蔽，其中两个部分中的第二部分被阻塞，并且两个部分中的第一部分是 编码。 用于对编码掩码进行编码的第一代码是从一组平衡双极正交码导出的一组单极性码中选择的。

公开(公告)号：US20130202005A1

公开(公告)日：2013-08-08

申请号：US13368162

申请日：2012-02-07

申请人： Birendra Dutt

发明人： Birendra Dutt

IPC分类号： H01S5/026 ,  H01L21/329

CPC分类号： H01L31/109 ,  H01L29/165 ,  H01L31/1804 ,  H01L31/1812 ,  H01S5/021 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/1071 ,  H01S5/1082 ,  H01S5/2063 ,  H01S5/2272 ,  H01S5/3027 ,  H01S5/3201 ,  Y02E10/547 ,  Y02P70/521

摘要： The subject matter disclosed herein relates to formation of silicon germanium devices with tensile strain. Tensile strain applied to a silicon germanium device in fabrication may improve performance of a silicon germanium laser or light detector.

摘要翻译： 本文公开的主题涉及形成具有拉伸应变的硅锗器件。 在制造中施加到硅锗器件的拉伸应变可以提高硅锗激光器或光检测器的性能。

公开(公告)号：US08054450B2

公开(公告)日：2011-11-08

申请号：US12114409

申请日：2008-05-02

申请人： Martin C. Peckerar ,  Mario Dagenais ,  Birendra Dutt ,  John D. Barry ,  Michael D. Messina, Jr. ,  Yves Ngu

发明人： Martin C. Peckerar ,  Mario Dagenais ,  Birendra Dutt ,  John D. Barry ,  Michael D. Messina, Jr. ,  Yves Ngu

IPC分类号： G03B27/52

CPC分类号： G03F7/70433 ,  G03F1/50 ,  G03F1/54

摘要： A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.

摘要翻译： 用于超高分辨率纳米光刻的步进系统采用光刻掩模，其包括其中形成有周期性的亚波长孔径阵列的导电光学不透明材料层。 暴露于波长在197nm-248nm范围内的光的光刻掩膜中的等离激元激发产生足够强度的高分辨率远场辐射图，以使晶片上的光刻胶曝光。 步进系统显示了对于掩模缺陷的弹性和在纳米尺寸（45nm-500nm））和用于集成电路设计的晶片上的各种形状的相干清晰特征的印记能力。 可以调整步进系统以对离开掩模的最高等离子体场的平面进行成像。