公开(公告)号：US08867915B1

公开(公告)日：2014-10-21

申请号：US13342784

申请日：2012-01-03

申请人： Amin Vahdat ,  Xiaoxue Zhao ,  Paul Germano ,  Bikash Koley ,  Hong Liu

发明人： Amin Vahdat ,  Xiaoxue Zhao ,  Paul Germano ,  Bikash Koley ,  Hong Liu

IPC分类号： H04J14/00

CPC分类号： H04B10/27 ,  H04Q11/0005 ,  H04Q11/0071 ,  H04Q2011/0052 ,  H04Q2011/0083 ,  H04Q2213/1301

摘要： A system and method of providing a dynamic optical network topology according to topology determinations made by a network control is disclosed. The system and method includes optical ports on an optical circuit switch system operably connected to a plurality of server groups, and optical ports on the optical circuit switch system operably connected to a plurality of packet processing nodes. The system and method also includes at least one memory and at least one processor to execute network control software to receive input comprising a bandwidth request, determine an output comprising a preferred optical link topology for the optical circuit switch system based on the received input, convert the optical link topology for the optical circuit switch system into optical circuit switch port mapping, and send the optical circuit switch port mapping to the optical circuit switch system and to the packet processing nodes.

摘要翻译： 公开了根据由网络控制进行的拓扑确定提供动态光网络拓扑的系统和方法。 该系统和方法包括可操作地连接到多个服务器组的光学电路交换系统上的光学端口和可操作地连接到多个分组处理节点的光学电路交换系统上的光学端口。 该系统和方法还包括至少一个存储器和至少一个处理器，用于执行网络控制软件以接收包括带宽请求的输入，基于所接收的输入确定包括用于光电路交换系统的优选光链路拓扑的输出，转换 将光电开关系统的光链路拓扑转换成光电路交换机端口映射，并将光电路交换机端口映射发送给光电路交换系统和分组处理节点。

公开(公告)号：US06531414B1

公开(公告)日：2003-03-11

申请号：US09563457

申请日：2000-05-02

申请人： Frederick G. Johnson ,  Bikash Koley ,  Linda M. Wasiczko

发明人： Frederick G. Johnson ,  Bikash Koley ,  Linda M. Wasiczko

IPC分类号： H01L2131

CPC分类号： H01L21/31666 ,  B82Y20/00 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02241 ,  H01L21/02255 ,  H01S5/2215 ,  H01S5/34

摘要： A method of forming a native oxide from at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one superlattice includes two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material. The method entails exposing each at least one superlattice to a water-containing environment and a temperature of at least about 425 degrees Celsius to convert at least a portion of said superlattice to a native oxide. The native oxide thus formed is useful in electrical and optoelectrical devices, such as lasers.

摘要翻译： 从III-V族半导体材料的至少一个应变补偿超晶格形成天然氧化物的方法，其中每个至少一个超晶格包括两组III-V族半导体材料的单层和至少两层含铝的单层 III-V族半导体材料。 该方法需要将每个至少一个超晶格暴露于含水环境和至少约425摄氏度的温度以将至少一部分超晶格转化为天然氧化物。 如此形成的自然氧化物可用于诸如激光器的电和光电器件中。

公开(公告)号：US06493366B1

公开(公告)日：2002-12-10

申请号：US09564371

申请日：2000-05-02

申请人： Frederick G. Johnson ,  Bikash Koley ,  Linda M. Wasiczko

发明人： Frederick G. Johnson ,  Bikash Koley ,  Linda M. Wasiczko

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18372 ,  H01S5/3406 ,  H01S5/3425

摘要： A vertical cavity surface emitting laser that includes a Group III-V semiconductor material substrate; a first Distributed Bragg Reflector mirror, where the first Distributed Bragg Reflector mirror includes at least seven pairs of layers, where each layer has a different index of refraction, where one of the layers is a Group III-V semiconductor material, and where the other layer is a completely oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material; a first Group III-V semiconductor material layer; a first contact; a selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice of Group III-V semiconductor material includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material; a second Group III-V semiconductor material layer; a second contact; and a second Distributed Bragg Reflector mirror that is identical to the first Distributed Bragg Reflector mirror.

摘要翻译： 一种垂直腔表面发射激光器，包括III-V族半导体材料衬底; 第一分布布拉格反射镜，其中第一分布布拉格反射镜包括至少七对层，其中每层具有不同的折射率，其中一层是III-V族半导体材料，其中另一层 层是III-V族半导体材料的完全氧化的至少一个应变补偿超晶格，其中每个至少一个应变补偿超晶格包括至少两个III-V族半导体材料的单层和至少两个铝单层 - Ⅲ-Ⅴ族半导体材料; 第一III-V族半导体材料层; 第一次接触 选择性氧化的至少一种III-V族半导体材料的应变补偿超晶格，其中每个至少一个III-V族半导体材料的应变补偿超晶格包括至少两个III-V族半导体材料的单层，并且至少 两个含铝的III-V族半导体材料的单层; 第二组III-V族半导体材料层; 第二次接触 和与第一个分布式布拉格反射镜相同的第二个分布式布拉格反射镜。

公开(公告)号：US20130129350A1

公开(公告)日：2013-05-23

申请号：US13298796

申请日：2011-11-17

申请人： Bikash Koley ,  Vijayanand Vusirikala ,  Hong Liu

发明人： Bikash Koley ,  Vijayanand Vusirikala ,  Hong Liu

IPC分类号： H04J14/00

CPC分类号： H04J14/026 ,  H04L5/0008 ,  H04L5/0028 ,  H04L25/0262 ,  H04L27/0008 ,  H04L41/5022 ,  H04L47/2425 ,  H04L47/2475 ,  H04Q11/0003 ,  H04Q11/0066 ,  H04Q2011/0084

摘要： Apparatus and methods are provided for application layer optimization in a modern data network. The optimization incorporates variable rate transmission across one or more optical data channels. Data throughput is maximized by enabling quality of service profiles on a per transmission channel basis. According to one aspect, a system is provided in which the application layer is aware of and controls the underlying transmission rate and quality of the transmission. This enables the system to fully utilize the transmission capacity of the channel. The application layer may map different applications to different transmission classes of service. The services can be classified based on data throughput rate, guaranteed error rates, latency and cost, among other criteria. This provides flexibility to the application layer to map some loss tolerant applications to a lower cost (per bit) transmission class.

摘要翻译： 为现代数据网络中的应用层优化提供了设备和方法。 优化结合了一个或多个光数据通道的可变速率传输。 通过在每个传输通道的基础上实现服务质量的质量来最大化数据吞吐量。 根据一个方面，提供了一种系统，其中应用层知道并控制传输的底层传输速率和质量。 这使得系统能够充分利用信道的传输容量。 应用层可以将不同的应用映射到不同的传输级别的服务。 服务可以根据数据吞吐率，保证的错误率，延迟和成本以及其他标准进行分类。 这为应用层提供了灵活性，将一些容错应用映射到较低成本（每位）传输类。

公开(公告)号：US20120269512A1

公开(公告)日：2012-10-25

申请号：US13089437

申请日：2011-04-19

申请人： Bikash Koley ,  Vijayanand Vusirikala ,  Hong Liu

发明人： Bikash Koley ,  Vijayanand Vusirikala ,  Hong Liu

IPC分类号： H04J14/00 ,  H04B10/06 ,  H04J14/08 ,  H04B10/04 ,  H04J14/06

CPC分类号： H04Q11/0005 ,  H04B10/5051 ,  H04B10/5053 ,  H04B10/5161 ,  H04B10/541 ,  H04B10/5561 ,  H04J3/04 ,  H04J3/0602 ,  H04J3/0685 ,  H04J14/0279 ,  H04J14/0298 ,  H04J14/06 ,  H04L27/34 ,  H04L27/36 ,  H04Q2011/0045 ,  H04Q2213/13361

摘要： Aspects of the invention provide transmitters and receivers for managing multiple optical signals. High order modulation, such as phase and/or amplitude modulation, is used to achieve multiple bits per symbol by transporting multiple asynchronous data streams in an optical transport system. One or more supplemental multiplexing techniques such as time division multiplexing, polarization multiplexing and sub-carrier multiplexing may be used in conjunction with the high order modulation processing. This may be done in various combinations to realize a highly spectrally efficient multi-data stream transport mechanism. The system receives a number of asynchronous signals which are unframed and synchronized, and then reframed and tagged prior to the high order modulation. Differential encoding may also be performed. Upon reception of the multiplexed optical signal, the receiver circuitry may employ either direct detection without a local oscillator or coherent detection with a local oscillator.

摘要翻译： 本发明的各方面提供用于管理多个光信号的发射机和接收机。 高阶调制（例如相位和/或幅度调制）用于通过在光学传输系统中传送多个异步数据流来实现每个符号的多个位。 可以结合高阶调制处理使用一个或多个补充复用技术，例如时分复用，偏振复用和副载波复用。 这可以以各种组合来实现，以实现高频谱效率的多数据流传输机制。 系统接收多个异步信号，这些异步信号是非帧和同步的，然后在高阶调制之前被重构和标记。 也可以执行差分编码。 在接收到复用的光信号时，接收机电路可以采用无本地振荡器的直接检测或与本地振荡器的相干检测。

公开(公告)号：US06407407B1

公开(公告)日：2002-06-18

申请号：US09563314

申请日：2000-05-02

申请人： Frederick G. Johnson ,  Bikash Koley ,  Linda M. Wasiczko

发明人： Frederick G. Johnson ,  Bikash Koley ,  Linda M. Wasiczko

IPC分类号： H01L2906

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/3216 ,  H01S5/3406 ,  H01S5/3425

摘要： A ridge laser that includes a Group III-V semiconductor material substrate; a first selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a multiple quantum well active region; a second selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a Group III-V semiconductor material cap layer; and a contact material. Each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material. In the preferred embodiment, the substrate is InP of any type; each selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material is InAs/AlAs, where each at least one superlattice of InAs/AlAs includes at least two monolayers of InAs and at least two monolayers of AlAs; the multiple quantum well active region is InGaAsP lattice matched to the InP substrate, the Group III-V semiconductor material cap layer is InP, and the contact material is gold.

摘要翻译： 包括III-V族半导体材料基板的脊状激光器; 第III-V族半导体材料的第一选择性氧化的至少一个应变补偿超晶格; 多量子阱活性区; 第二种选择性氧化至少一种III-V族半导体材料的应变补偿超晶格; III-V族半导体材料盖层; 和接触材料。 每个至少一个应变补偿超晶格包括至少两个III-V族半导体材料的单层和含铝III-V族半导体材料的至少两个单层。 在优选实施例中，衬底是任何类型的InP; 每个选择性氧化的III-V族半导体材料的至少一个应变补偿超晶格是InAs / AlAs，其中每个至少一个InAs / AlAs的超晶格包括至少两个InAs的单层和至少两个AlAs的单层; 多量子阱有源区是与InP衬底匹配的InGaAsP晶格，III-V族半导体材料盖层是InP，接触材料是金。

公开(公告)号：US09225614B2

公开(公告)日：2015-12-29

申请号：US13298796

申请日：2011-11-17

申请人： Bikash Koley ,  Vijayanand Vusirikala ,  Hong Liu

发明人： Bikash Koley ,  Vijayanand Vusirikala ,  Hong Liu

IPC分类号： H04L12/24 ,  H04J14/02 ,  H04L5/00 ,  H04L25/02 ,  H04L27/00

CPC分类号： H04J14/026 ,  H04L5/0008 ,  H04L5/0028 ,  H04L25/0262 ,  H04L27/0008 ,  H04L41/5022 ,  H04L47/2425 ,  H04L47/2475 ,  H04Q11/0003 ,  H04Q11/0066 ,  H04Q2011/0084

摘要： Apparatus and methods are provided for application layer optimization in a modern data network. The optimization incorporates variable rate transmission across one or more optical data channels. Data throughput is maximized by enabling quality of service profiles on a per transmission channel basis. According to one aspect, a system is provided in which the application layer is aware of and controls the underlying transmission rate and quality of the transmission. This enables the system to fully utilize the transmission capacity of the channel. The application layer may map different applications to different transmission classes of service. The services can be classified based on data throughput rate, guaranteed error rates, latency and cost, among other criteria. This provides flexibility to the application layer to map some loss tolerant applications to a lower cost (per bit) transmission class.

摘要翻译： 为现代数据网络中的应用层优化提供了设备和方法。 优化结合了一个或多个光数据通道的可变速率传输。 通过在每个传输通道的基础上实现服务质量的质量来最大化数据吞吐量。 根据一个方面，提供了一种系统，其中应用层知道并控制传输的底层传输速率和质量。 这使得系统能够充分利用信道的传输容量。 应用层可以将不同的应用映射到不同的传输级别的服务。 服务可以根据数据吞吐率，保证的错误率，延迟和成本以及其他标准进行分类。 这为应用层提供了灵活性，将一些容错应用映射到较低成本（每位）传输类。

公开(公告)号：US20080050117A1

公开(公告)日：2008-02-28

申请号：US11808781

申请日：2007-06-12

申请人： Bikash Koley

发明人： Bikash Koley

IPC分类号： H04J14/00

CPC分类号： H04J14/0227 ,  H04J14/0201 ,  H04J14/0241 ,  H04J14/0283 ,  H04J14/0294 ,  H04J14/0295 ,  H04L12/437 ,  H04Q11/0062 ,  H04Q11/0066 ,  H04Q2011/0081

摘要： A resilient photonic network includes a plurality of resilient switching nodes, each node comprising a photonic switch and one of a Layer-2/3 switch and router, and a plurality of bi-directional ports, each connected between the photonic switch the one of a Layer-2/3 switch and router, wherein at least one optical signal having a specific wavelength is transmitted through a first network port of a first one of the plurality of resilient switching nodes to an adjacent second one of the plurality of resilient switching nodes and the at least one optical signal is transmitted through a second network port of the first one of the plurality of resilient switching nodes to an adjacent third one of the plurality of resilient switching nodes to establish a bi-directional connectivity between the first, second, and third pluralities of resilient switching nodes.

摘要翻译： 弹性光子网络包括多个弹性交换节点，每个节点包括光子交换机和第2/3层交换机和路由器之一以及多个双向端口，每个双向端口连接在光子交换机之间的一个 第二层/第三层交换机和路由器，其中具有特定波长的至少一个光信号通过多个弹性交换节点中的第一个的第一网络端口传输到多个弹性交换节点中相邻的第二个， 所述至少一个光信号通过所述多个弹性交换节点中的第一个的第二网络端口被发送到所述多个弹性交换节点中的相邻第三个，以建立所述第一，第二和第 第三多个弹性交换节点。

公开(公告)号：US20050180749A1

公开(公告)日：2005-08-18

申请号：US10981572

申请日：2004-11-05

申请人： Bikash Koley ,  Si-Hyung Cho

发明人： Bikash Koley ,  Si-Hyung Cho

IPC分类号： H04J14/00 ,  H04J14/02 ,  H04Q11/00

CPC分类号： H04J14/0294 ,  H04J14/0227 ,  H04J14/0246 ,  H04J14/025 ,  H04J14/0283 ,  H04J14/0284 ,  H04Q11/0066 ,  H04Q2011/0081

摘要： A system and method is provided for operating a node in an optical Ethernet network system, comprising: generating optical signals of at least one wavelength corresponding to the node; transmitting the optical signals on each of the first and second optical fiber paths; receiving optical signals of the at least one wavelength, either directly or indirectly, from the first and second optical fiber paths; and selectively choosing signals from, either directly or indirectly, either the first or second optical fiber paths depending on the optical signals received from the first or second optical fiber path.

摘要翻译： 提供了一种用于操作光以太网网络系统中的节点的系统和方法，包括：产生对应于该节点的至少一个波长的光信号; 在所述第一和第二光纤路径中的每一个上传送光信号; 从所述第一和第二光纤路径直接或间接接收所述至少一个波长的光信号; 以及根据从第一或第二光纤路径接收的光信号，直接或间接选择第一或第二光纤路径的信号。

公开(公告)号：US06610612B2

公开(公告)日：2003-08-26

申请号：US10012352

申请日：2001-12-12

申请人： Mario Dagenais ,  Bikash Koley ,  Frederick G. Johnson

发明人： Mario Dagenais ,  Bikash Koley ,  Frederick G. Johnson

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/2215 ,  H01S5/34306 ,  H01S5/3434

摘要： A method of selectively oxidizing III-V semiconductor material is provided. There is provided a III-V semiconductor system comprising a short-period super lattice (SSL) of N periods of alternating layers of an aluminum-bearing III-V compound semiconductor material and a second III-V semiconductor material where N≧2, at least one phosphorous-rich III-V semiconductor layer, and at least one substantially phosphorous-free III-V semiconductor layer between each of the at least one phosphorous-rich layers and the SSL. The III-V semiconductor system is exposed to oxidizing atmosphere to selectively oxidize at least a portion of the SSL.