- 专利标题： Method of efficient controllable and repeatable wet oxidation in a phosphorous-rich III-V material system
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申请号： US10012352申请日： 2001-12-12
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公开(公告)号： US06610612B2公开(公告)日： 2003-08-26
- 发明人: Mario Dagenais , Bikash Koley , Frederick G. Johnson
- 申请人： Mario Dagenais , Bikash Koley , Frederick G. Johnson
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A method of selectively oxidizing III-V semiconductor material is provided. There is provided a III-V semiconductor system comprising a short-period super lattice (SSL) of N periods of alternating layers of an aluminum-bearing III-V compound semiconductor material and a second III-V semiconductor material where N≧2, at least one phosphorous-rich III-V semiconductor layer, and at least one substantially phosphorous-free III-V semiconductor layer between each of the at least one phosphorous-rich layers and the SSL. The III-V semiconductor system is exposed to oxidizing atmosphere to selectively oxidize at least a portion of the SSL.
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