公开(公告)号：US20050180749A1

公开(公告)日：2005-08-18

申请号：US10981572

申请日：2004-11-05

Applicant: Bikash Koley ,  Si-Hyung Cho

Inventor： Bikash Koley ,  Si-Hyung Cho

IPC: H04J14/00 ,  H04J14/02 ,  H04Q11/00

CPC classification number: H04J14/0294 ,  H04J14/0227 ,  H04J14/0246 ,  H04J14/025 ,  H04J14/0283 ,  H04J14/0284 ,  H04Q11/0066 ,  H04Q2011/0081

Abstract: A system and method is provided for operating a node in an optical Ethernet network system, comprising: generating optical signals of at least one wavelength corresponding to the node; transmitting the optical signals on each of the first and second optical fiber paths; receiving optical signals of the at least one wavelength, either directly or indirectly, from the first and second optical fiber paths; and selectively choosing signals from, either directly or indirectly, either the first or second optical fiber paths depending on the optical signals received from the first or second optical fiber path.

Abstract translation: 提供了一种用于操作光以太网网络系统中的节点的系统和方法，包括：产生对应于该节点的至少一个波长的光信号; 在所述第一和第二光纤路径中的每一个上传送光信号; 从所述第一和第二光纤路径直接或间接接收所述至少一个波长的光信号; 以及根据从第一或第二光纤路径接收的光信号，直接或间接选择第一或第二光纤路径的信号。

公开(公告)号：US07885117B2

公开(公告)日：2011-02-08

申请号：US12419576

申请日：2009-04-07

Applicant: Chang-Hee Shin ,  Ki-Seok Cho ,  Si-Hyung Cho

Inventor： Chang-Hee Shin ,  Ki-Seok Cho ,  Si-Hyung Cho

IPC: G11C16/04

CPC classification number: G11C17/18 ,  G11C17/16

Abstract: Disclosed is a method for programming a nonvolatile memory device including one time programmable unit cells. The method for programming a nonvolatile memory device including one time programmable (OTP) unit cells, the method comprising applying a pulse type program voltage having a plurality of cycles. The present invention relates to a method for programming a nonvolatile memory device, which can prevent malfunctions by enhancing a data sensing margin in a read operation through the normal dielectric breakdown of an antifuse during a program operation, and thus improve the reliability in the read operation of an OTP unit cell.

Abstract translation: 公开了一种用于编程包括一个可编程单位单元的非易失性存储器件的方法。 一种用于编程包括一次可编程（OTP）单元单元的非易失性存储器件的方法，所述方法包括应用具有多个周期的脉冲型编程电压。 非易失性存储器件的编程方法技术领域本发明涉及一种非易失性存储器件的编程方法，其可以通过在编程操作期间通过反熔丝的正常介质击穿来增强读操作中的数据检测余量来防止故障，从而提高读操作的可靠性 的OTP单元。

公开(公告)号：US20090262565A1

公开(公告)日：2009-10-22

申请号：US12419576

申请日：2009-04-07

Applicant: Chang-Hee Shin ,  Ki-Seok Cho ,  Si-Hyung Cho

Inventor： Chang-Hee Shin ,  Ki-Seok Cho ,  Si-Hyung Cho

IPC: G11C17/00 ,  G11C7/00

CPC classification number: G11C17/18 ,  G11C17/16

Abstract: Disclosed is a method for programming a nonvolatile memory device including one time programmable unit cells. The method for programming a nonvolatile memory device including one time programmable (OTP) unit cells, the method comprising applying a pulse type program voltage having a plurality of cycles. The present invention relates to a method for programming a nonvolatile memory device, which can prevent malfunctions by enhancing a data sensing margin in a read operation through the normal dielectric breakdown of an antifuse during a program operation, and thus improve the reliability in the read operation of an OTP unit cell.

Abstract translation: 公开了一种用于编程包括一个可编程单位单元的非易失性存储器件的方法。 一种用于编程包括一次可编程（OTP）单元单元的非易失性存储器件的方法，所述方法包括应用具有多个周期的脉冲型编程电压。 非易失性存储器件的编程方法技术领域本发明涉及一种非易失性存储器件的编程方法，其可以通过在编程操作期间通过反熔丝的正常介质击穿来增强读操作中的数据检测余量来防止故障，从而提高读操作的可靠性 的OTP单元。