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1.发明授权公开(公告)号：US08446086B2
公开(公告)日：2013-05-21
申请号：US13000295
申请日：2009-05-29
IPC分类号： H01J63/04
CPC分类号： H01J61/0675 , H01J61/70
摘要： Provided is a fluorescent lamp electrode, having excellent sputtering resistance and able to retain excellent dark-start characteristics over a long period of time when used as an electrode in a cold cathode fluorescent lamp, and which can be produced inexpensively. A fluorescent lamp of this invention has a prolonged life resulting from the use of said electrode. Said electrode is made by dispersing in a nickel or nickel alloy base one or more rare earth metals selected from among lanthanum, cerium, yttrium, samarium, praseodymium, niobium, europium and gadolinium in the form of a precipitated boride phase.
摘要翻译： 提供一种荧光灯电极，具有优异的溅射电阻，并且能够在用作冷阴极荧光灯中的电极的同时保持优异的暗启动特性，并且可以廉价地制造。 本发明的荧光灯由于使用所述电极而具有延长的寿命。 所述电极通过在镍或镍合金基体中以沉淀硼化物相的形式分散在镧，铈，钇，钐，镨，铌，铕和钆中的一种或多种稀土金属制成。
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公开(公告)号：US20130187170A1
公开(公告)日：2013-07-25
申请号：US13809261
申请日：2011-07-14
CPC分类号： C30B19/12 , C30B9/06 , C30B9/10 , C30B19/04 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/007 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.
摘要翻译： 提供了一种制造廉价且高品质的氮化铝晶体的方法。 含有N原子的气体被引入Ga-Al合金的熔体中，由此使氮化铝晶体在Ga-Al合金的熔体中的晶种基板上外延生长。 氮化铝晶体的生长温度设定为1000℃以上且1500℃以下，从而使GaN分解为Ga金属和氮气。
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3.发明授权公开(公告)号：US09045821B2
公开(公告)日：2015-06-02
申请号：US13582571
申请日：2011-03-01
IPC分类号： H01L31/042 , H01L31/0687 , H01L31/0216 , H01L31/0236 , H01L31/054 , H01L33/42 , B32B15/00 , B32B33/00 , C23C14/08 , H01L31/0224 , C23C14/02 , C23C14/06 , C23C14/34
CPC分类号： C23C14/083 , C23C14/024 , C23C14/0676 , C23C14/08 , C23C14/086 , C23C14/34 , C23C14/3471 , H01L31/022466 , H01L31/022483 , H01L33/42 , Y02E10/52 , Y10T428/265
摘要： Provided is a laminate which includes a transparent conductive film layer that is composed of an oxide thin film mainly composed of titanium oxide and contains an additional element such as niobium, and also contains an anatase phase having more excellent crystallinity and further has high refractive index and low resistivity by forming an optimal buffer layer on the substrate. Also provided are: a semiconductor light emitting element which comprises the laminate; and a functional element such as a solar cell, which includes the laminate.
摘要翻译： 本发明提供一种层叠体，其具有透明导电膜层，该透明导电膜层由主要由氧化钛构成的氧化物薄膜构成，并含有铌等附加元素，并且还含有具有更优异的结晶性的锐钛矿相，并且还具有高折射率， 通过在衬底上形成最佳缓冲层来实现低电阻率。 还提供：包括层压体的半导体发光元件; 以及包括层压体的诸如太阳能电池的功能元件。
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4.发明申请公开(公告)号：US20110181177A1
公开(公告)日：2011-07-28
申请号：US13000295
申请日：2009-05-29
CPC分类号： H01J61/0675 , H01J61/70
摘要： Provided is a fluorescent lamp electrode, having excellent sputtering resistance and able to retain excellent dark-start characteristics over a long period of time when used as an electrode in a cold cathode fluorescent lamp, and which can be produced inexpensively. A fluorescent lamp of this invention has a prolonged life resulting from the use of said electrode. Said electrode is made by dispersing in a nickel or nickel alloy base one or more rare earth metals selected from among lanthanum, cerium, yttrium, samarium, praseodymium, niobium, europium and gadolinium in the form of a precipitated boride phase.
摘要翻译： 提供一种荧光灯电极，具有优异的溅射电阻，并且能够在用作冷阴极荧光灯中的电极的同时保持优异的暗启动特性，并且可以廉价地制造。 本发明的荧光灯由于使用所述电极而具有延长的寿命。 所述电极通过在镍或镍合金基体中以沉淀硼化物相的形式分散在镧，铈，钇，钐，镨，铌，铕和钆中的一种或多种稀土金属制成。
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公开(公告)号：US08735905B2
公开(公告)日：2014-05-27
申请号：US13809261
申请日：2011-07-14
IPC分类号： H01L29/15 , H01L31/0256
CPC分类号： C30B19/12 , C30B9/06 , C30B9/10 , C30B19/04 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/007 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.
摘要翻译： 提供了一种制造廉价且高品质的氮化铝晶体的方法。 含有N原子的气体被引入Ga-Al合金的熔体中，由此使氮化铝晶体在Ga-Al合金的熔体中的晶种基板上外延生长。 氮化铝晶体的生长温度设定为1000℃以上且1500℃以下，从而使GaN分解为Ga金属和氮气。
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6.发明申请公开(公告)号：US20120325310A1
公开(公告)日：2012-12-27
申请号：US13582571
申请日：2011-03-01
CPC分类号： C23C14/083 , C23C14/024 , C23C14/0676 , C23C14/08 , C23C14/086 , C23C14/34 , C23C14/3471 , H01L31/022466 , H01L31/022483 , H01L33/42 , Y02E10/52 , Y10T428/265
摘要： Provided is a laminate which includes a transparent conductive film layer that is composed of an oxide thin film mainly composed of titanium oxide and contains an additional element such as niobium, and also contains an anatase phase having more excellent crystallinity and further has high refractive index and low resistivity by forming an optimal buffer layer on the substrate. Also provided are: a semiconductor light emitting element which comprises the laminate; and a functional element such as a solar cell, which includes the laminate.
摘要翻译： 本发明提供一种层叠体，其具有透明导电膜层，该透明导电膜层由主要由氧化钛构成的氧化物薄膜构成，并含有铌等附加元素，并且还含有具有更优异的结晶性的锐钛矿相，并且还具有高折射率， 通过在衬底上形成最佳缓冲层来实现低电阻率。 还提供：包括层压体的半导体发光元件; 以及包括层压体的诸如太阳能电池的功能元件。
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