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1.发明申请公开(公告)号：US20120325310A1
公开(公告)日：2012-12-27
申请号：US13582571
申请日：2011-03-01
CPC分类号： C23C14/083 , C23C14/024 , C23C14/0676 , C23C14/08 , C23C14/086 , C23C14/34 , C23C14/3471 , H01L31/022466 , H01L31/022483 , H01L33/42 , Y02E10/52 , Y10T428/265
摘要： Provided is a laminate which includes a transparent conductive film layer that is composed of an oxide thin film mainly composed of titanium oxide and contains an additional element such as niobium, and also contains an anatase phase having more excellent crystallinity and further has high refractive index and low resistivity by forming an optimal buffer layer on the substrate. Also provided are: a semiconductor light emitting element which comprises the laminate; and a functional element such as a solar cell, which includes the laminate.
摘要翻译： 本发明提供一种层叠体，其具有透明导电膜层，该透明导电膜层由主要由氧化钛构成的氧化物薄膜构成，并含有铌等附加元素，并且还含有具有更优异的结晶性的锐钛矿相，并且还具有高折射率， 通过在衬底上形成最佳缓冲层来实现低电阻率。 还提供：包括层压体的半导体发光元件; 以及包括层压体的诸如太阳能电池的功能元件。
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2.发明授权公开(公告)号：US09045821B2
公开(公告)日：2015-06-02
申请号：US13582571
申请日：2011-03-01
IPC分类号： H01L31/042 , H01L31/0687 , H01L31/0216 , H01L31/0236 , H01L31/054 , H01L33/42 , B32B15/00 , B32B33/00 , C23C14/08 , H01L31/0224 , C23C14/02 , C23C14/06 , C23C14/34
CPC分类号： C23C14/083 , C23C14/024 , C23C14/0676 , C23C14/08 , C23C14/086 , C23C14/34 , C23C14/3471 , H01L31/022466 , H01L31/022483 , H01L33/42 , Y02E10/52 , Y10T428/265
摘要： Provided is a laminate which includes a transparent conductive film layer that is composed of an oxide thin film mainly composed of titanium oxide and contains an additional element such as niobium, and also contains an anatase phase having more excellent crystallinity and further has high refractive index and low resistivity by forming an optimal buffer layer on the substrate. Also provided are: a semiconductor light emitting element which comprises the laminate; and a functional element such as a solar cell, which includes the laminate.
摘要翻译： 本发明提供一种层叠体，其具有透明导电膜层，该透明导电膜层由主要由氧化钛构成的氧化物薄膜构成，并含有铌等附加元素，并且还含有具有更优异的结晶性的锐钛矿相，并且还具有高折射率， 通过在衬底上形成最佳缓冲层来实现低电阻率。 还提供：包括层压体的半导体发光元件; 以及包括层压体的诸如太阳能电池的功能元件。
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3.发明授权Nitride semiconductor device with a vertical channel and method for producing the nitride semiconductor device 有权具有垂直沟道的氮化物半导体器件和用于制造氮化物半导体器件的方法公开(公告)号：US08134180B2
公开(公告)日：2012-03-13
申请号：US12222462
申请日：2008-08-08
申请人： Hirotaka Otake , Shigefusa Chichibu
发明人： Hirotaka Otake , Shigefusa Chichibu
IPC分类号： H01L29/66 , H01L21/02 , H01L21/338
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/66462 , H01L29/7788 , H01L29/7789
摘要： A nitride semiconductor device includes: a semiconductor base layer made of a conductive group III nitride semiconductor having a principal plane defined by a nonpolar plane or a semipolar plane; an insulating layer formed on the principal plane of the semiconductor base layer with an aperture partially exposing the principal plane; a nitride semiconductor multilayer structure portion, formed on a region extending onto the insulating layer from the aperture, having a parallel surface parallel to the principal plane of the semiconductor base layer as well as a +c-axis side first inclined surface and a −c-axis side second inclined surface inclined with respect to the principal plane of the semiconductor base layer and including two types of group III nitride semiconductor layers at least having different lattice constants; a gate electrode formed to be opposed to the second inclined surface; a source electrode arranged to be electrically connected with the group III nitride semiconductor layers; and a drain electrode formed on a back surface of the semiconductor base layer opposite to the principal plane.
摘要翻译： 氮化物半导体器件包括：由具有由非极性平面或半极性面限定的主面的导电III族氮化物半导体制成的半导体基底层; 绝缘层，形成在所述半导体基底层的主平面上，所述绝缘层具有部分地暴露所述主平面的孔; 氮化物半导体多层结构部分，形成在从所述孔延伸到绝缘层上的区域上，具有平行于半导体基底层的主平面的平行表面以及+ c轴侧第一倾斜面和-c 轴侧第二倾斜面相对于半导体基底层的主面倾斜，并且包括至少具有不同晶格常数的两种III族氮化物半导体层; 形成为与所述第二倾斜面相对的栅电极; 源极，被配置为与所述III族氮化物半导体层电连接; 以及形成在与主平面相反的半导体基底层的背面上的漏电极。
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4.发明申请公开(公告)号：US20090057684A1
公开(公告)日：2009-03-05
申请号：US12222462
申请日：2008-08-08
申请人： Hirotaka Otake , Shigefusa Chichibu
发明人： Hirotaka Otake , Shigefusa Chichibu
IPC分类号： H01L29/778 , H01L21/338
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/66462 , H01L29/7788 , H01L29/7789
摘要： A nitride semiconductor device includes: a semiconductor base layer made of a conductive group III nitride semiconductor having a principal plane defined by a nonpolar plane or a semipolar plane; an insulating layer formed on the principal plane of the semiconductor base layer with an aperture partially exposing the principal plane; a nitride semiconductor multilayer structure portion, formed on a region extending onto the insulating layer from the aperture, having a parallel surface parallel to the principal plane of the semiconductor base layer as well as a +c-axis side first inclined surface and a −c-axis side second inclined surface inclined with respect to the principal plane of the semiconductor base layer and including two types of group III nitride semiconductor layers at least having different lattice constants; a gate electrode formed to be opposed to the second inclined surface; a source electrode arranged to be electrically connected with the group III nitride semiconductor layers; and a drain electrode formed on a back surface of the semiconductor base layer opposite to the principal plane.
摘要翻译： 氮化物半导体器件包括：由具有由非极性平面或半极性面限定的主面的导电III族氮化物半导体制成的半导体基底层; 绝缘层，形成在所述半导体基底层的主平面上，所述绝缘层具有部分地暴露所述主平面的孔; 氮化物半导体多层结构部分，形成在从所述孔延伸到绝缘层上的区域上，具有平行于半导体基底层的主平面的平行表面以及+ c轴侧第一倾斜面和-c 轴侧第二倾斜面相对于半导体基底层的主面倾斜，并且包括至少具有不同晶格常数的两种III族氮化物半导体层; 形成为与所述第二倾斜面相对的栅电极; 源极，被配置为与所述III族氮化物半导体层电连接; 以及形成在与主平面相反的半导体基底层的背面上的漏电极。
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