公开(公告)号：US07960033B2

公开(公告)日：2011-06-14

申请号：US12558857

申请日：2009-09-14

申请人： Tokuyuki Nakayama ,  Yoshiyuki Abe

发明人： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC分类号： H01B1/08

CPC分类号： C23C14/086 ,  C04B35/01 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/3414 ,  Y10T428/12618 ,  Y10T428/24975 ,  Y10T428/24992 ,  Y10T428/26 ,  Y10T428/269

摘要： A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10−3 Ω·cm to 8.0×10−3 Ω·cm a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.

摘要翻译： 提供了非晶体的透明导电膜，其在短波长的可见光区域具有高的透光率，并且相对于弯曲而言难以喙。 透明导电膜是由Ga，In和O组成的非晶氧化物膜，其中Ga含量范围为35at。 ％至45 at。 相对于所有金属原子，电阻率范围为1.2×10-3＆OHgr·cm〜8.0×10-3＆OHgr·cm，膜厚为500nm以下，波长380nm的光的透射率 是45％以上。

公开(公告)号：US20100164896A1

公开(公告)日：2010-07-01

申请号：US12654571

申请日：2009-12-23

申请人： Tokuyuki Nakayama ,  Yoshiyuki Abe

发明人： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC分类号： G06F3/041 ,  B32B37/00

CPC分类号： G06F3/044 ,  B32B2037/246 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2457/202 ,  Y10T156/10

摘要： A capacitive touch panel, which is capable of providing high quality display, without a problem of position detection, even in the case where a production process with lower cost and higher heat load is adopted, by application of a transparent conductive film with high heat resistance; a manufacturing method therefor, and a liquid crystal display apparatus.A capacitive touch panel having a structure where at least a transparent conductive film and a dielectric layer are laminated onto a transparent substrate, and a member for position detection comprising at least a wiring portion for position detection along with a electrodes for position detection is arranged at said substrate frame portion, characterized in that the transparent conductive film is composed of an oxide having indium oxide as a main component and containing gallium and tin; and this is provided by a method for producing a capacitive touch panel, characterized in that after forming an amorphous transparent conductive film composed of an oxide having indium oxide as a main component and containing gallium and tin onto the transparent substrate or the like.

摘要翻译： 即使在采用具有较低成本和较高热负荷的生产工艺的情况下，通过使用具有高耐热性的透明导电膜，也能够提供高质量的显示，能够提供高质量的显示，而不存在位置检测的问题 ; 其制造方法和液晶显示装置。 具有将至少透明导电膜和电介质层层叠在透明基板上的结构的电容式触摸面板，以及用于位置检测的构件至少包括用于位置检测的布线部分以及用于位置检测的电极，布置在 所述基板框架部分的特征在于，所述透明导电膜由具有氧化铟作为主要成分并含有镓和锡的氧化物构成; 这是通过一种用于制造电容式触摸屏的方法提供的，其特征在于在形成由氧化铟作为主要成分并且含有镓和锡的氧化物构成的非晶形透明导电膜形成在透明基板上等上。

公开(公告)号：US20100129660A1

公开(公告)日：2010-05-27

申请号：US12452063

申请日：2008-07-02

申请人： Tokuyuki Nakayama ,  Yoshiyuki Abe

发明人： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC分类号： H01B1/08 ,  C23C14/34 ,  B32B17/06 ,  B32B27/06

CPC分类号： C23C14/3414 ,  C03C17/245 ,  C04B35/01 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3407 ,  H01B1/08 ,  Y10T428/24355 ,  Y10T428/268 ,  Y10T428/30 ,  Y10T428/31507 ,  Y10T428/31786 ,  Y10T428/31935

摘要： A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same.It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a β-Ga2O3-type structure, or GaInO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 μm, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.

摘要翻译： 用于溅射的靶或用于离子镀的片，其能够获得高速成膜和无结节，适于获得其的氧化物烧结体及其制造方法，以及具有低吸收率的透明导电膜 蓝光和低比电阻，通过使用它们获得。 由具有铟和镓作为氧化物的氧化物烧结体提供，其特征在于具有双晶型结构的In 2 O 3相形成主晶相，并且具有Ga 2 O 3型结构的GaInO 3相或GaInO 3 相和（Ga，In）2 O 3相精细分散在其中，作为平均粒径等于或小于5μm的晶粒，并且镓的含量等于或高于10原子％以下 35原子数为原子数比Ga /（In + Ga）等。

公开(公告)号：US20100078192A1

公开(公告)日：2010-04-01

申请号：US12579016

申请日：2009-10-14

申请人： Tokuyuki NAKAYAMA ,  Yoshiyuki ABE

发明人： Tokuyuki NAKAYAMA ,  Yoshiyuki ABE

IPC分类号： H02G3/04 ,  B32B5/00

CPC分类号： C23C14/086 ,  C04B35/01 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/3414 ,  Y10T428/12618 ,  Y10T428/24975 ,  Y10T428/24992 ,  Y10T428/26 ,  Y10T428/269

摘要： A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10−3Ω·cm to 8.0×10−3Ω·cm, a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.

摘要翻译： 提供了非晶体的透明导电膜，其在短波长的可见光区域具有高的透光率，并且相对于弯曲而言难以喙。 透明导电膜是由Ga，In和O组成的非晶氧化物膜，其中Ga含量范围为35at。 ％至45 at。 相对于所有金属原子，电阻率范围为1.2×10 -3＆OHgr·cm〜8.0×10 -3＆OHgr·cm，膜厚为500nm以下，波长380nm的光的透射率为 45％以上。

公开(公告)号：US07476343B2

公开(公告)日：2009-01-13

申请号：US11624309

申请日：2007-01-18

申请人： Tokuyuki Nakayama ,  Yoshiyuki Abe

发明人： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC分类号： H01B1/08

CPC分类号： H01B1/12 ,  C04B35/01 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/77 ,  C04B2235/80

摘要： A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a β-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400)/β-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.

摘要翻译： 用于透明导电膜制造的烧结体靶主要由Ga，In和O组成; Ga含量范围从49.1英尺。 至65岁。 相对于所有金属原子的％; 主要由β-GaInO 3相和In 2 O 3相构成; 提供45％以下的In2O3相（400）/β-GaInO3相（111）X射线衍射峰强度比; 并且具有5.8g / cm 3以上的密度。 通过使用溅射技术获得的透明导电膜是主要由Ga，In和O组成的非晶氧化物透明导电膜，使得Ga含量范围为49.1at。 至65岁。 相对于所有金属原子，功函数为5.1eV以上，波长633nm的光的折射率为1.65〜1.85。

公开(公告)号：US07153453B2

公开(公告)日：2006-12-26

申请号：US11115971

申请日：2005-04-27

申请人： Yoshiyuki Abe ,  Tokuyuki Nakayama ,  Go Ohara ,  Riichiro Wake

发明人： Yoshiyuki Abe ,  Tokuyuki Nakayama ,  Go Ohara ,  Riichiro Wake

IPC分类号： H01B1/08 ,  B32B15/04 ,  C23C14/00

CPC分类号： C23C14/08 ,  C04B35/01 ,  C04B35/6261 ,  C04B35/62625 ,  C04B35/62655 ,  C04B35/64 ,  C04B37/026 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/408 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6584 ,  C04B2235/6586 ,  C04B2235/664 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/96 ,  C04B2237/12 ,  C04B2237/124 ,  C04B2237/34 ,  C04B2237/403 ,  C23C14/3414 ,  Y10S428/918

摘要： There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 μm so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 μm; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C. for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of the sinter furnace at a rate of 50 to 250 liters/min per 0.1 m3 furnace volume.

摘要翻译： 提供一种具有低电阻率，薄膜内应力绝对值低，可见光范围高透射率的非晶透明导电薄膜，用于制造非晶透明导电薄膜的氧化物烧结体，以及 从其获得的溅射靶。 通过以下方法获得氧化物烧结体：制备In 2 N 3 O 3粉末WO 3 N 3粉末和平均晶粒尺寸较小的ZnO粉末 使得钨的W / In原子数比为0.004〜0.023，锌的Zn / In原子数比为0.004〜0.100; 将制备的粉末混合10至30小时; 将得到的混合粉末造粒直至平均粒径为20〜150μm; 通过2〜5吨/平方厘米压力的冷等静压机成型所获得的造粒粉末，并将所得成形体烧结在1200〜1500℃。 在每0.1m 3炉体积以50至250升/分的速率将氧气引入烧结炉的气氛中的气氛中进行10至40小时。

公开(公告)号：US08757902B2

公开(公告)日：2014-06-24

申请号：US13503504

申请日：2010-11-02

申请人： Katsushi Ono ,  Tokuyuki Nakayama

发明人： Katsushi Ono ,  Tokuyuki Nakayama

IPC分类号： G03B9/02

CPC分类号： G02B5/003 ,  G03B9/02 ,  G03B9/10 ,  G03B9/36 ,  Y10T428/24355

摘要： A black heat resistant light shading film usable as a shutter blade or a fixed diaphragm, a diaphragm blade for a diaphragm device for a light intensity adjusting module. The black heat resistant light shading film is formed with fine unevennesses at the both surfaces of a resin film having a heat resistance of 155° C. or higher. The resin film is a black film containing a black pigment and an inorganic filler and thickness of the black heat resistant light shading film is 25 μm or less. Surface roughness (arithmetic average height Ra) of the both surfaces is 0.2 to 2.2 μm and an average optical density, which is an index of light shading performance of light in a wavelength region of 380 to 780 nm, is 3.5 or higher.

摘要翻译： 可用作快门叶片或固定隔膜的黑色耐热遮光膜，用于光强度调节模块的光圈装置的光圈叶片。 黑色耐热遮光膜在耐热性为155℃以上的树脂膜的两面形成微细的凹凸。 树脂膜是含有黑色颜料和无机填料的黑色膜，黑色耐热遮光膜的厚度为25μm以下。 两面的表面粗糙度（算术平均高度Ra）为0.2〜2.2μm，作为380〜780nm的波长区域的光的遮光性的指标的平均光密度为3.5以上。

公开(公告)号：US08389135B2

公开(公告)日：2013-03-05

申请号：US12226874

申请日：2007-05-11

申请人： Tokuyuki Nakayama ,  Yoshiyuki Abe

发明人： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC分类号： B32B15/04 ,  C04B35/04 ,  C04B35/10 ,  C04B35/453

CPC分类号： C23C14/3407 ,  C04B35/453 ,  C04B35/62695 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/661 ,  C04B2235/767 ,  C04B2235/77 ,  C04B2235/81 ,  C23C14/086 ,  C23C14/3414 ,  H01B1/08 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/12618 ,  Y10T428/268 ,  Y10T428/30 ,  Y10T428/31507 ,  Y10T428/31678

摘要： An oxide sintered body having zinc oxide as a main component and containing magnesium, and a transparent conductive substrate are provided, and an oxide sintered body having zinc oxide and magnesium, wherein content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+Al)/(Zn+Ga+Al), and content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target.

摘要翻译： 提供具有氧化锌作为主要成分并含有镁的氧化物烧结体和透明导电性基体，以及具有氧化锌和镁的氧化物烧结体，其中Mg的含量为0.02〜0.30，以Mg / （Zn + Mg）; 具有氧化锌，镁，镓和/或铝的氧化物烧结体，其中镓和/或铝的含量超过0且等于或低于0.09，原子数比（Ga + Al）/（Zn + Ga + Al），Mg /（Zn + Ga + Al + Mg）的原子数比为0.02〜0.30。 通过处理这些氧化物烧结体获得的靶; 以及通过溅射法或离子镀法在基板上形成的透明导电膜。

公开(公告)号：US20130001080A1

公开(公告)日：2013-01-03

申请号：US13613595

申请日：2012-09-13

申请人： Yoshiyuki Abe ,  Tokuyuki Nakayama ,  Go Ohara ,  Riichiro Wake

发明人： Yoshiyuki Abe ,  Tokuyuki Nakayama ,  Go Ohara ,  Riichiro Wake

IPC分类号： C23C14/08

CPC分类号： H01B1/08 ,  C04B35/453 ,  C04B35/457 ,  C04B35/6261 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/664 ,  C04B2235/80

摘要： An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation and subsequently compacting by charging the granule into a mold followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.

摘要翻译： 基本上含有锌，锡和氧的氧化物烧结体; 以锡原子数比计的锡，（Zn + Sn）为0.23〜0.50，主要由氧化锌相和至少一种锡酸锌化合物相组成，或由至少一种 锡酸锌复合相; 通过将含水溶剂配制成含有锡酸锌化合物的粉末的原料粉末，氧化锡粉末和氧化锌粉末的混合粉末，并将所得到的浆料混合等于长于 15小时，通过将浆料进行固液分离，干燥和造粒，然后通过将颗粒装入模具中随后压实，然后在烧结气氛下在1300至1500℃下烧结所得成形体等于或长于15小时 。

公开(公告)号：US20120175569A1

公开(公告)日：2012-07-12

申请号：US13388887

申请日：2010-07-29

申请人： Tokuyuki Nakayama ,  Yoshiyuki Abe

发明人： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC分类号： H01B1/08 ,  C23C14/08 ,  C04B35/01 ,  C23C14/34

CPC分类号： H01J37/3429 ,  C04B35/01 ,  C04B35/645 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/668 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/95 ,  C04B2235/963 ,  C23C14/08 ,  C23C14/3414 ,  H01B1/08 ,  H01J1/00 ,  H01L31/022466 ,  H01L33/42

摘要： A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation, an oxide sintered body most suitable for obtaining the same, and a production method thereof.A oxide sintered body comprising an indium oxide and a cerium oxide, and further comprising, as an oxide, one or more kinds of an metal element (M element) selected from the metal element group consisting of titanium, zirconium, hafnium, molybdenum and tungsten, wherein the cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce+M) , the M element content is equal to or lower than 1% by atom, as an atomicity ratio of M/(In+Ce+M) , and the total content of cerium and the M element is equal to or lower than 9% by atom, as an atomicity ratio of (Ce+M)/(In+Ce+M) , characterized in that said oxide sintered body has an In2O3 phase of a bixbyite structure as a main crystal phase, has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm, as a second phase; a production method for a oxide sintered body obtained by mixing indium oxide powder and cerium oxide powder, and the raw material powder with average particle diameter of equal to or smaller than 1.5 μm containing oxide powder of M element and then molding the mixed powder, and sintering the molding by a normal pressure sintering method, or molding and sintering the mixed powder by a hot press method, and the like.

摘要翻译： 能够实现适合于蓝色LED或太阳能电池的透明导电膜的高速成膜，无节点成膜，最适合于获得该氧化物烧结体的溅射靶和制造方法 其中。 包含氧化铟和氧化铈的氧化物烧结体，并且还包含作为氧化物的一种或多种选自钛，锆，铪，钼和钨的金属元素组中的一种或多种金属元素（M元素） 其中铈含量为0.3〜9原子％，作为Ce /（In + Ce + M）的原子数比，M元素含量为1原子％以下，原子比为M / （Ce + M）/（In + Ce + M），并且铈和M元素的总含量等于或低于9原子％，原子数比（Ce + M）/（In + Ce + M） 所述氧化物烧结体具有作为主晶相的二氧化硅结构的In 2 O 3相，具有以平均粒径为3μm以下的晶粒微分散的萤石型结构的CeO 2相作为 第二阶段 通过混合氧化铟粉末和氧化铈粉末得到的氧化物烧结体的制造方法以及含有M元素的氧化物粉末的平均粒径等于或小于1.5μm的原料粉末，然后将该混合粉末成型， 通过常压烧结法烧结成型体，或通过热压法成型和烧结混合粉末等。