Disk device
    1.
    发明授权

    公开(公告)号:US11948607B2

    公开(公告)日:2024-04-02

    申请号:US18117603

    申请日:2023-03-06

    发明人: Hirofumi Kuribara

    摘要: According to one embodiment, a disk device includes rotatable magnetic disks, a first actuator assembly rotatably supported on a pivot through a first bearing unit, a second actuator assembly rotatably supported on the pivot through a second bearing unit and provided side by side with the first actuator assembly in an axial direction of the pivot, and a filter unit provided between the magnetic disks and the first and second actuator assemblies. The filter unit includes a holder including a shielding portion facing a boundary portion between the first actuator assembly and the second actuator assembly and a ventilation opening provided at a position spaced apart from the boundary portion in the axial direction, and a filter held by the holder and facing the ventilation opening.

    Memory system and controller
    2.
    发明授权

    公开(公告)号:US11947400B2

    公开(公告)日:2024-04-02

    申请号:US18200453

    申请日:2023-05-22

    IPC分类号: G06F1/00 G06F1/26 G06F12/02

    摘要: In a memory system in an embodiment, in a case of normal operation, a control unit returns a write completion response upon completion of reception of write data from a host, and writes the write data into nonvolatile memory in a multiple values. In a case of unordinary power-off, changeover to operation using a backup battery is conducted and the control unit writes dirty data that is not completed in writing into the nonvolatile memory, into the nonvolatile memory with two values. When next boot, the control unit reads the dirty data from the nonvolatile memory into the volatile memory, and thereafter writes the dirty data into the nonvolatile memory in a multiple values.

    Semiconductor device
    4.
    发明授权

    公开(公告)号:US11923443B2

    公开(公告)日:2024-03-05

    申请号:US17469239

    申请日:2021-09-08

    发明人: Shoko Hanagata

    摘要: A semiconductor device in which IGBT regions and diode regions are alternately set along a first direction, includes first to third electrodes, and a semiconductor portion. The semiconductor portion includes a collector layer, a low-concentration cathode layer, a high-concentration cathode layer, a drift layer, anode layers, base layers, and an emitter layer. The low-concentration cathode layer and the high-concentration cathode layer are in contact with the first electrode. When the diode region on a lower surface of the semiconductor portion is divided into three equal regions of a first peripheral region, a central region, and a second peripheral region along the first direction, an area ratio of the low-concentration cathode layer in the central region is higher than the area ratio of the low-concentration cathode layer in the first peripheral region and the second peripheral region.

    Isolator
    6.
    发明授权
    Isolator 有权

    公开(公告)号:US11916027B2

    公开(公告)日:2024-02-27

    申请号:US17016631

    申请日:2020-09-10

    IPC分类号: H01L23/64 H01F27/28 H01L49/02

    摘要: According to one embodiment, an isolator includes first and second electrodes, first and second insulating portions, and a first dielectric portion. The first insulating portion is provided on the first electrode. The second electrode is provided on the first insulating portion. The second insulating portion is provided around the second electrode along a first plane perpendicular to a first direction. The second insulating portion contacts the second electrode. The first dielectric portion is provided between the first and second insulating portions. At least a portion of the first dielectric portion contacts the second electrode and is positioned around the second electrode along the first plane. A distance between a lower end of the second electrode and a first interface between the first dielectric portion and the second insulating portion is less than a distance between the first interface and an upper end of the second electrode.

    Memory system and method of controlling semiconductor memory device

    公开(公告)号:US11908526B2

    公开(公告)日:2024-02-20

    申请号:US17589365

    申请日:2022-01-31

    摘要: According to one embodiment, a memory system includes first and second memory cells and a controller. The controller obtains first and second data based on a first read operation from the first and second memory cells, respectively. The controller obtains third and fourth data based on a second read from the first and second memory cells, respectively. The second read operation is different from the first read operation in a read voltage. The controller sets first and second values indicating likelihood of data stored in the first and second memory cells, respectively, based on information indicating locations of the first and second memory cells. The controller performs error correction on data read from the first and second memory cells using at least the third data and the first value, and using at least fourth data and the second value, respectively.

    Memory system adjusting packet size and method

    公开(公告)号:US11880592B2

    公开(公告)日:2024-01-23

    申请号:US17549440

    申请日:2021-12-13

    发明人: Takeshi Kikuchi

    IPC分类号: G06F3/06

    摘要: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller communicates with a host. The host includes a host memory and a circuit. The circuit accesses the host memory in a unit of first size. When an address designated as a first location of the host memory where data read from the nonvolatile memory is to be stored is not aligned with a boundary in the host memory defined in a unit of the first size, the controller transmits a first packet which has a size from the first location to the boundary and includes the read data to be stored from the first location, and transmits a second packet which has the first size and includes the read data to be stored from the boundary thereafter.