公开(公告)号：US20080301972A1

公开(公告)日：2008-12-11

申请号：US12134604

申请日：2008-06-06

申请人： Jun Yamawaku ,  Tsuyoshi Moriya ,  Hideaki Yakushiji ,  Kazumasa Abe

发明人： Jun Yamawaku ,  Tsuyoshi Moriya ,  Hideaki Yakushiji ,  Kazumasa Abe

IPC分类号： F26B5/04

CPC分类号： H01J37/3244 ,  H01J37/32449

摘要： An evacuation method which can reduce evacuation time without causing moisture-related problems. In a vacuum processing apparatus including a vacuum processing chamber, during the evacuation for the vacuum processing chamber, the pressure in the vacuum processing chamber is maintained at a pressure lower than or equal to the atmospheric pressure but higher than or equal to 6.7×102 Pa (5 Torr).

摘要翻译： 可以减少疏散时间而不引起与潮湿有关的问题的疏散方法。 在包括真空处理室的真空处理设备中，在真空处理室抽真空期间，真空处理室中的压力保持在低于或等于大气压力但高于或等于6.7×102Pa（ 5托）。

公开(公告)号：US07387689B2

公开(公告)日：2008-06-17

申请号：US11750960

申请日：2007-05-18

申请人： John M. de Larios ,  Mike Ravkin ,  Carl Woods ,  Fritz Redeker ,  James P. Garcia

发明人： John M. de Larios ,  Mike Ravkin ,  Carl Woods ,  Fritz Redeker ,  James P. Garcia

IPC分类号： B08B3/00 ,  F26B5/04

CPC分类号： H01L21/67051 ,  B08B3/04 ,  G03F7/30 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

摘要： Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close proximity to the surface of the substrate and removing the first fluid from the surface of the substrate. The removing is processed just as first fluid is applied to the surface of the substrate, and the removing ensures that the applied first fluid is contained between a surface of the head and the surface of the substrate and the first fluid being applied and removed defines a controlled meniscus. The method further includes moving the controlled meniscus over different regions of the surface of the substrate when movement of the head or the substrate is dictated. The moving of the controlled meniscus enables processing of part or all of the surface of the substrate using the first fluid.

摘要翻译： 提供了通过头部处理基板的方法，该头被配置为与基板的表面紧密非接触地放置。 一种方法包括当头部紧邻衬底的表面并从衬底的表面去除第一流体时，将第一流体施加到衬底表面上的管道中。 当第一流体被施加到基板的表面上时，移除被处理，并且移除确保所施加的第一流体被包含在头部的表面和基底的表面之间，并且被施加和移除的第一流体限定了 受控半月板 所述方法还包括当限制头部或基底的运动时，将受控弯液面移动到衬底的表面的不同区域上。 受控弯液面的移动使得能够使用第一流体处理基板的部分或全部表面。

公开(公告)号：US07367139B2

公开(公告)日：2008-05-06

申请号：US11454875

申请日：2006-06-19

申请人： Yasunori Ando ,  Masatoshi Onoda

发明人： Yasunori Ando ,  Masatoshi Onoda

IPC分类号： F26B5/04 ,  F26B19/00

CPC分类号： F26B25/008 ,  F26B5/04 ,  Y10S414/139

摘要： This vacuum processing apparatus has a fixed processing chamber 24 and two movable load lock chambers 28a and 28b. A gate valve 26 is provided on the processing chamber 24, and gate valves 30 are respectively provided on the load lock chambers 28a and 28b. Each of the load lock chambers 28a and 28b is moved in a Y direction by a preparatory chamber moving mechanism 34. A vacuum seal 54, which is expandable and shrinkable so as to vacuum seal a gap G between the gate valves 26 and 30 which are set close to each other during the expansion, is provided around a peripheral edge portion of the processing chamber gate valve 26. Further, a substrate transporting mechanism for transporting a substrate 2 between the processing chamber 24 and each of the load lock chambers 28a and 28b set close thereto.

摘要翻译： 该真空处理装置具有固定的处理室24和两个可移动的装载锁定室28a和28b。 闸阀26设置在处理室24上，闸阀30分别设置在负载锁定室28a和28b上。 每个装载锁定室28a和28b由预备室移动机构34在Y方向上移动。可膨胀和收缩以便真空密封闸阀26和30之间的间隙G的真空密封件54 在处理室闸阀26的周缘部周围设置有膨胀时彼此靠近设置的基板输送机构。另外，基板输送机构用于在处理室24和各负载锁定室28之间输送基板2 a和28 b附近。

公开(公告)号：US07347006B2

公开(公告)日：2008-03-25

申请号：US11065359

申请日：2005-02-25

申请人： Tsuyoshi Moriya ,  Hiroshi Nagaike ,  Hiroyuki Nakayama ,  Kikuo Okuyama ,  Manabu Shimada

发明人： Tsuyoshi Moriya ,  Hiroshi Nagaike ,  Hiroyuki Nakayama ,  Kikuo Okuyama ,  Manabu Shimada

IPC分类号： F26B5/04

CPC分类号： H01L21/67248 ,  H01J37/32935 ,  H01J2237/0225

摘要： A processing apparatus includes a first detection unit for detecting a temperature of an inner wall of the vacuum vessel, a second detection unit for detecting a temperature of the processing unit, and a first control unit for controlling a temperature of the gas. The first control unit controls the temperature of the gas based on a temperature gradient between the temperatures of the inner wall and the gas or a temperature gradient between the temperatures of the processing unit and the gas. A method for removing particles from a processing apparatus includes a first detection step for detecting a temperature of an inner wall of the vacuum vessel, a second detection step for detecting a temperature of the processing unit, a first control step for controlling a temperature of the gas, and a gas introduction step for introducing the gas into the inner space of the vacuum vessel.

摘要翻译： 处理装置包括用于检测真空容器的内壁的温度的第一检测单元，用于检测处理单元的温度的第二检测单元和用于控制气体的温度的第一控制单元。 第一控制单元基于内壁和气体的温度之间的温度梯度或处理单元和气体的温度之间的温度梯度来控制气体的温度。 从处理装置中除去颗粒的方法包括：第一检测步骤，用于检测真空容器的内壁的温度;第二检测步骤，用于检测处理单元的温度;第一控制步骤， 气体和气体引入步骤，用于将气体引入真空容器的内部空间。

公开(公告)号：US20070227033A1

公开(公告)日：2007-10-04

申请号：US11692379

申请日：2007-03-28

申请人： Yoshiyuki Kobayashi ,  Itsuko Sakai ,  Tokuhisa Ohiwa

发明人： Yoshiyuki Kobayashi ,  Itsuko Sakai ,  Tokuhisa Ohiwa

IPC分类号： F26B5/04

CPC分类号： H01L21/67748 ,  H01L21/6831 ,  H01L21/6875

摘要： A substrate transferring apparatus capable of suppressing particles from being produced. The substrate processing apparatus (1) includes a processing chamber (12) in which a wafer (W) is housed, a transfer arm (17) for transferring the wafer to the processing chamber, and a susceptor (45) which is disposed in the processing chamber and on which the transferred wafer is mounted. An electrostatic chuck (55) having a plurality of protrusions (55a) is disposed In an upper portion of the susceptor. A transfer fork (25) having a plurality of protrusions (25a) for holding a wafer is disposed on a distal end of the transfer arm. These protrusions (25a) are provided in the transfer fork (25) such that wafer holding portions (81) by the protrusions (25a) are different from wafer holding protrusions (80) by the protrusions (55a) of the electrostatic chuck.

摘要翻译： 能够抑制产生颗粒的基板转印装置。 基板处理装置（1）包括容纳晶片（W）的处理室（12），将晶片传送到处理室的传送臂（17）和设置在该处理室中的基座（45） 处理室，并且在其上安装转移的晶片。 具有多个突起（55a）的静电卡盘（55）设置在基座的上部。 具有用于保持晶片的多个突起（25a）的传送叉（25）设置在传送臂的远端上。 这些突起（25a）设置在传送叉（25）中，使得通过突起（25a）的晶片保持部（81）不同于通过静电卡盘的突起（55a）的晶片保持突起（80） 。

公开(公告)号：USRE39823E1

公开(公告)日：2007-09-11

申请号：US10060304

申请日：2002-02-01

申请人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

发明人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC分类号： F26B5/04

CPC分类号： H01L21/67748 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253

摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dirty-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

摘要翻译： 本发明涉及一种具有真空处理室的真空处理装置，其内部必须是干式清洁的，以及一种操作这种装置的方法。 当真空处理室被清洁脏时，虚设基板通过基板输送装置从虚设基板存储装置转移到真空处理室中，所述虚拟基板存储装置与用于存储待处理基板的存储装置一起设置在空气气氛中， 通过产生等离子体对真空处理室进行干洗。 在完成干洗之后，虚拟衬底返回到虚设衬底存储装置。 因此，仅用于清洁目的的特定机构是不必要的，并且可以使装置的结构简单。 此外，用于干洗的虚拟基板和待加工的基板不共存，可以防止由于灰尘和剩余气体而被处理的基板的污染，并且生产率可以高。

公开(公告)号：USRE39776E1

公开(公告)日：2007-08-21

申请号：US10062618

申请日：2002-02-05

申请人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

发明人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC分类号： F26B5/04

CPC分类号： H01L21/67748 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253

摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used to dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

摘要翻译： 本发明涉及一种具有真空处理室的真空处理装置，其内部必须是干式清洁的，以及一种操作这种装置的方法。 当真空处理室被干洗时，虚设基板通过基板传送装置从设置在空气气氛中的虚设基板存储装置与用于存储待处理基板的存储装置一起转移到真空处理室中， 通过产生等离子体对真空处理室进行干洗。 在完成干洗之后，虚拟衬底返回到虚设衬底存储装置。 因此，仅用于清洁目的的特定机构是不必要的，并且可以使装置的结构简单。 此外，用于干燥的虚拟基板和待加工的基板不共存，可以防止由于灰尘和剩余气体而被处理的基板的污染，并且生产率可以高。

公开(公告)号：US07210246B2

公开(公告)日：2007-05-01

申请号：US10985727

申请日：2004-11-10

申请人： Peter van der Meulen

发明人： Peter van der Meulen

IPC分类号： F26B5/04

CPC分类号： H01L21/67167 ,  B25J9/042 ,  H01L21/67126 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67253 ,  H01L21/67259 ,  H01L21/67706 ,  H01L21/67727 ,  H01L21/67733 ,  H01L21/67736 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/67757 ,  H01L21/67781 ,  H01L21/68 ,  H01L21/68707 ,  H01L21/68735 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139 ,  Y10T74/20305

摘要： Methods and systems are provided for handling an item in a vacuum-based handling system for semiconductor manufacturing. The methods include providing a heater or dryer for the load lock of the handling system that dries a semiconductor wafer during the pumping down of the load lock.

摘要翻译： 提供了用于处理用于半导体制造的基于真空的处理系统中的物品的方法和系统。 所述方法包括提供用于处理系统的装载锁定的加热器或干燥器，其在加载锁定的下降期间干燥半导体晶片。

公开(公告)号：US07118764B2

公开(公告)日：2006-10-10

申请号：US10105661

申请日：2002-03-25

申请人： Domenico Carbone ,  Claude Quettier ,  Giovanni Semino ,  Ernesto Fossati

发明人： Domenico Carbone ,  Claude Quettier ,  Giovanni Semino ,  Ernesto Fossati

IPC分类号： A61K9/14 ,  F26B3/08 ,  F26B5/04

CPC分类号： C08B30/14 ,  A23B7/16 ,  A23G3/346 ,  A23G2200/06 ,  A23L27/79 ,  A61K9/286 ,  A61K9/4816

摘要： The subject of the present invention is a process for preparing pregelatinized high amylose starch, comprising the steps consisting of: forming a suspension comprising a high amylose starch and water; subjecting the said suspension to steam jet cooking at a temperature of between 125 and 135° C. so as to obtain a pregelatinized high amylose starch paste; cooking and drying the said pregelatinized starch paste on a drum dryer at a pressure of between 2 and 10 bar, so as to obtain a pregelatinized high amylose starch. Its subject is also a pregelatinized high amylose starch, having an apparent density of less than 0.4 g/ml for a mean particle size of 100 micrometers. Its subject is in addition the use of such a starch for the manufacture of soft gelatin capsules or of hard gelatin capsules and the film-coating of pharmaceutical, dietary or agricultural solid forms.

公开(公告)号：US20060168839A1

公开(公告)日：2006-08-03

申请号：US11327361

申请日：2006-01-09

申请人： Ju-Won Lee ,  Jae-Hyun Sung ,  Nak-Hee Seong

发明人： Ju-Won Lee ,  Jae-Hyun Sung ,  Nak-Hee Seong

IPC分类号： F26B13/30 ,  F26B5/04

CPC分类号： H01L21/67109

摘要： A layer on a semiconductor substrate is scanned with a stream of heated gas to bake the layer. A baking apparatus includes a stage that supports the semiconductor substrate and a gas injector that expels the stream of the heated gas. The stage and the gas injector are moved relative to one another to scan the substrate with the stream of heated gas and thus, bake the layer that is disposed thereon. Fumes emanating from the layer are removed while the layer is scanned. To this end, the apparatus also includes a vacuum head that is fixed in position relative to the gas injector.

摘要翻译： 用加热气体流扫描半导体衬底上的层以烘烤该层。 烘烤装置包括支撑半导体衬底的台和排出加热气体流的气体注射器。 阶段和气体注入器相对于彼此移动，以加热气体流扫描衬底，从而烘烤设置在其上的层。 在扫描层时，从层中发出的烟雾被去除。 为此，该装置还包括相对于气体喷射器固定在适当位置的真空头。