公开(公告)号：US20210180183A1

公开(公告)日：2021-06-17

申请号：US17184085

申请日：2021-02-24

申请人： Applied Materials, Inc.

发明人： Jinrui GUO ,  Ludovic GODET ,  Rutger MEYER TIMMERMAN THIJSSEN

IPC分类号： C23C16/04 ,  C23C16/30 ,  C23C16/34 ,  C23C16/32 ,  C23C16/40 ,  C23C16/24 ,  C23C16/455

摘要： Embodiments of the present disclosure generally relate to processing an optical workpiece containing grating structures on a substrate by deposition processes, such as atomic layer deposition (ALD). In one or more embodiments, a method for processing an optical workpiece includes positioning a substrate containing a first layer within a processing chamber, where the first layer contains grating structures separated by trenches formed in the first layer, and each of the grating structures has an initial critical dimension, and depositing a second layer on at least the sidewalls of the grating structures by ALD to produce corrected grating structures separated by the trenches, where each of the corrected grating structures has a corrected critical dimension greater than the initial critical dimension.

公开(公告)号：US11037823B2

公开(公告)日：2021-06-15

申请号：US15965457

申请日：2018-04-27

申请人： KOKUSAI ELECTRIC CORPORATION

发明人： Tsuyoshi Takeda ,  Naofumi Ohashi ,  Toshiyuki Kikuchi

IPC分类号： H01L21/768 ,  C23C16/32 ,  H01L21/02 ,  C23C16/455 ,  H01L23/532 ,  H01L23/522

摘要： Described herein is a technique capable of providing a semiconductor device having good characteristics. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) loading a substrate into a process chamber; and (b) forming a stacked etch stopper film by performing: (b-1) forming a first etch stopper film containing a first element and a second element by supplying a first element-containing gas and a second element-containing gas onto the substrate; and (b-2) forming a second etch stopper film containing the first element, the second element and a third element by supplying the first element-containing gas, the second element-containing gas and a third element-containing gas onto the first etch stopper film.

公开(公告)号：US20210166964A1

公开(公告)日：2021-06-03

申请号：US16770674

申请日：2018-11-29

申请人： Tokyo Electron Limited

发明人： Masayuki HARASHIMA ,  Michikazu NAKAMURA

IPC分类号： H01L21/683 ,  C23C16/32 ,  C23C16/458 ,  H01L21/02

摘要： There is provided a film forming apparatus for heating a target substrate on a stage, supplying a processing gas to the target substrate, and performing a film forming process on the target substrate, including: an accommodation part having an internal space for accommodating the stage, wherein the processing gas is supplied to the internal space and is inductively heated; a rotary shaft part configured to rotatably support the stage; and an elevating part configured to raise and lower the target substrate to deliver the target substrate between an external substrate transfer device and the stage, wherein at least one of the rotary shaft part and the elevating part is formed of a material having a thermal conductivity of 15 W/m·K or less and a melting point of 1,800 degrees C. or higher.

公开(公告)号：US20210140067A1

公开(公告)日：2021-05-13

申请号：US17149733

申请日：2021-01-15

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Chikara MORI ,  Waichi YAMAMURA ,  Shoji KANO ,  Akihiro HIRATE

IPC分类号： C30B29/36 ,  C04B41/00 ,  C30B25/08 ,  C04B41/87 ,  C30B23/00 ,  C30B25/12 ,  C04B41/50 ,  C23C16/32 ,  C23C16/56

摘要： A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

公开(公告)号：US10995404B2

公开(公告)日：2021-05-04

申请号：US16437690

申请日：2019-06-11

申请人： CORNING INCORPORATED

发明人： Kaveh Adib ,  Robert Alan Bellman ,  Charles Andrew Paulson ,  James Joseph Price

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/32 ,  C23C16/40

摘要： A coating material includes silicon and/or aluminum, hydrogen and any two or more of oxygen, nitrogen, carbon, and fluorine. The coating material exhibits a hardness of about 17 GPa or greater and an optical band gap of about 3.5 eV or greater. The coating material includes, in atomic %, silicon and/or aluminum in an amount of about 40 or greater, hydrogen in an amount in the range from about 1 to about 25, nitrogen in an amount of about 30 or greater, oxygen in an amount in the range from about 0 to about 7.5, carbon in an amount in the range from about 0 to about 10, and optionally, fluorine and/or boron. Articles including the coating material may exhibit an average transmittance of about 85% or greater over an optical wavelength regime in the range from about 380 nm to about 720 nm and colorlessness.

公开(公告)号：US20210108309A1

公开(公告)日：2021-04-15

申请号：US16960277

申请日：2019-01-03

申请人： Applied Materials, Inc.

发明人： Vivek Bharat SHAH ,  Anup Kumar SINGH ,  Bhaskar KUMAR ,  Ganesh BALASUBRAMANIAN

IPC分类号： C23C16/02 ,  C23C16/32 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52

摘要： Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.

公开(公告)号：US10941491B2

公开(公告)日：2021-03-09

申请号：US15713758

申请日：2017-09-25

申请人： UNITED TECHNOLOGIES CORPORATION

发明人： Ying She ,  John E. Holowczak

IPC分类号： C23C16/54 ,  C04B35/628 ,  D02J1/18 ,  B65H57/16 ,  B65H57/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/455

摘要： A tow coating reactor system includes a reactor for receiving fiber tow, a wedge situated adjacent the reactor and configured to receive the tow at a tip end, such that as the tow moves across the wedge, the wedge spreads the tow into a plurality of sub-tows.

公开(公告)号：US10910165B2

公开(公告)日：2021-02-02

申请号：US15556242

申请日：2016-03-04

申请人： University of Technology Sydney

发明人： Mohsin Ahmed ,  Francesca Iacopi

IPC分类号： H01G11/36 ,  H01G11/26 ,  H01G11/56 ,  C01B32/184 ,  C23C14/18 ,  C23C14/58 ,  C23C16/32 ,  H01G11/86 ,  H01G11/28 ,  H01G11/68 ,  H01G11/32 ,  C23C14/34 ,  C23C28/00 ,  C23F1/30 ,  C30B25/18 ,  C30B29/36 ,  H01G11/34 ,  B82Y30/00 ,  B82Y40/00

摘要： A process for forming high surface area graphene structures includes: depositing at least one metal on a surface of silicon carbide; heating the at least one metal and the silicon carbide to cause at least one of the metals to react with a portion of the silicon carbide to form silicide regions extending into an unreacted portion of the silicon carbide and graphene disposed between the silicide regions and the unreacted portion of the silicon carbide; and removing the silicide regions to provide a silicon carbide structure having a highly irregular surface and a surface layer of graphene.

公开(公告)号：US20210017632A1

公开(公告)日：2021-01-21

申请号：US17042983

申请日：2019-03-29

申请人： KYOCERA CORPORATION

发明人： Hirotoshi ITO ,  Kou RI ,  Tadashi KATSUMA

IPC分类号： C22C29/08 ,  B23B27/14 ,  C23C28/04 ,  C23C16/32 ,  C23C16/34 ,  B23C5/16

摘要： A cemented carbide may include a hard phase that may include W and C, a first solid solution phase and a second solid solution phase, each of which may include W, C, Ti and Zr, and a binder phase that may include an iron group metal. The cemented carbide may include 1.0-3.0 mass % of the Ti in terms of TiC, and 0.75-2.0 mass % of the Zr in terms of ZrC. An amount of the Ti in terms of TiC may be more than 1 time and less than three times an amount of the Zr in terms of ZrC. The first solid solution phase may satisfy a relationship of 0.1≤Ti/(Ti+Zr)

公开(公告)号：US20210005469A1

公开(公告)日：2021-01-07

申请号：US16498209

申请日：2019-08-28

申请人： ADMAP INC.

发明人： Satoshi KAWAMOTO

IPC分类号： H01L21/673 ,  B28B1/30 ,  C23C16/32

摘要： A SiC Freestanding Film Structure capable of preventing a functional surface of a SiC Freestanding Film Structure from being affected by a film thickness and improving strength by increasing the film thickness, the SiC Freestanding Film Structure is formed by depositing a SiC layer through a vapor deposition type film formation method. The SiC layer is deposited with respect to a first SiC layer serving as a functional surface in the SiC Freestanding Film Structure. Focusing on the functional surface and a non-functional surface positioned on front and back sides of any particular portion, the functional surface has smoothness higher than that of the non-functional surface.