公开(公告)号：US20240105433A1

公开(公告)日：2024-03-28

申请号：US18536612

申请日：2023-12-12

申请人： APPLIED MATERIALS, INC.

发明人： Jothilingam RAMALINGAM ,  William FRUCHTERMAN

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3441 ,  C23C14/34 ,  H01J37/3447

摘要： Methods and apparatus for reducing burn-in time of a physical vapor deposition shield, including: sputtering a dielectric target having a first dielectric constant to form a dielectric layer upon an inner surface of a shield, wherein the shield includes an aluminum oxide coating having a second dielectric constant in an amount sufficient to reduce the burn-in time, and wherein the first dielectric constant and second dielectric constant are substantially similar.

公开(公告)号：US11842890B2

公开(公告)日：2023-12-12

申请号：US16994616

申请日：2020-08-16

申请人： APPLIED MATERIALS, INC.

发明人： Jothilingam Ramalingam ,  William Fruchterman

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3441 ,  C23C14/34 ,  H01J37/3447

摘要： Methods and apparatus for reducing burn-in time of a physical vapor deposition shield, including: sputtering a dielectric target having a first dielectric constant to form a dielectric layer upon an inner surface of a shield, wherein the shield includes an aluminum oxide coating having a second dielectric constant in an amount sufficient to reduce the burn-in time, and wherein the first dielectric constant and second dielectric constant are substantially similar.

公开(公告)号：US20230282466A1

公开(公告)日：2023-09-07

申请号：US17687673

申请日：2022-03-06

申请人： LI QIN ZHOU

发明人： LI QIN ZHOU

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35

CPC分类号： H01J37/3405 ,  H01J37/3441 ,  C23C14/3442 ,  H01J37/3461 ,  H01J37/3452 ,  C23C14/351 ,  H01J2237/332

摘要： A sputtering magnetron apparatus is provided. Another aspect employs a set of magnet assembly that forms a magnetic field over the target surface to confine electrons. A further aspect of a sputtering magnetron includes a side dark space shield that is made of magnetic metal which shunts the magnetic flux leaking from the side to prevent the formation of a secondary plasma around the dark space shield when it operates simultaneously with another plasma source.

公开(公告)号：US11658016B2

公开(公告)日：2023-05-23

申请号：US16409757

申请日：2019-05-10

申请人： Applied Materials, Inc.

发明人： Kathleen Scheible ,  Michael Allen Flanigan ,  Goichi Yoshidome ,  Adolph Miller Allen ,  Cristopher Pavloff

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/50 ,  H01L21/687

CPC分类号： H01J37/3488 ,  C23C14/3407 ,  C23C14/50 ,  H01J37/34 ,  H01J37/3441 ,  H01J37/3447 ,  H01L21/68735

摘要： A shield encircles a sputtering target that faces a substrate support in a substrate processing chamber. The shield comprises an outer band having a diameter sized to encircle the sputtering target, the outer band having upper and bottom ends, and the upper end having a tapered surface extending radially outwardly and adjacent to the sputtering target. A base plate extends radially inward from the bottom end of the outer band. An inner band joined to the base plate at least partially surrounds a peripheral edge of a substrate support. The shield can also have a heat exchanger comprising a conduit with an inlet and outlet to flow heat exchange fluid therethrough.

公开(公告)号：US20180358212A1

公开(公告)日：2018-12-13

申请号：US15771803

申请日：2015-12-09

申请人： Applied Materials, Inc.

发明人： Thomas Werner ZILBAUER ,  Uwe HENKEL ,  Johannes THIEL ,  Kamal EL ZAAR ,  Stefan KELLER

IPC分类号： H01J37/34

CPC分类号： H01J37/3441 ,  C23C14/3471 ,  H01J37/32477 ,  H01J37/32605 ,  H01J37/32651

摘要： The present disclosure provides a system configured for sputter deposition on a substrate. The system includes a sputter deposition chamber having a processing zone, one or more sputter deposition sources arranged at a first side of the processing zone, and a shielding device arranged at a second side of the processing zone, wherein the shielding device includes a frame assembly mounted to the sputter deposition chamber and one or more conductive sheets detachably mounted on the frame assembly, wherein the one or more conductive sheets provide a surface arranged along the processing zone.

公开(公告)号：US20180240655A1

公开(公告)日：2018-08-23

申请号：US15890694

申请日：2018-02-07

申请人： APPLIED MATERIALS, INC.

发明人： HANBING WU ,  ANANTHA K. SUBRAMANI ,  ASHISH GOEL ,  XIAODONG WANG ,  WEI W. WANG ,  RONGJUN WANG ,  CHI HONG CHING

IPC分类号： H01J37/34 ,  H01L43/12

CPC分类号： H01J37/3441 ,  H01J37/3429 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.

公开(公告)号：US09905401B2

公开(公告)日：2018-02-27

申请号：US14676031

申请日：2015-04-01

申请人： CANON ANELVA CORPORATION

发明人： Nobuo Yamaguchi ,  Kazuaki Matsuo ,  Susumu Akiyama ,  Satoshi Uchino ,  Yoshimitsu Shimane

IPC分类号： C23C14/00 ,  H01J37/32 ,  H01J37/34

CPC分类号： H01J37/3244 ,  C23C14/0063 ,  C23C14/0068 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3447 ,  H01J2237/3328

摘要： A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.

公开(公告)号：US20160348237A1

公开(公告)日：2016-12-01

申请号：US15117603

申请日：2014-02-19

申请人： Sakai Display Products Corporation

发明人： Hirokazu Imahara ,  Yasuhiro Wakamori

IPC分类号： C23C16/44 ,  C23C14/22

CPC分类号： H01J37/3441 ,  C23C14/22 ,  C23C14/564 ,  C23C16/44 ,  C23C16/4404 ,  H01J37/34 ,  H01J37/3411

摘要： A film deposition apparatus, comprising: a deposition preventive plate which is located in a processing chamber performing film deposition processing on a substrate so as to surround a processing region in the processing chamber for processing on the substrate, and which prevents a film deposition material from being attached to an inner wall of the processing chamber, wherein the deposition preventive plate is configured by arranging a plurality of component plates of which respective end portions are overlapped with each other at a gap, such that a thermal expansion generated due to the film deposition processing is absorbed by a relative movement of an overlapped part in two adjacent component plates of the plurality of component plates in a width direction of the overlapped part, and a concave part is provided at the overlapped part to make the gap provided in a side communicating with the processing region be larger than that provided in the other side, thin parts provided in the respective end portions of the two adjacent component plates are overlapped with each other, and a surface facing the processing region in the overlapped part and a surface facing the processing region in non-overlapped part are on the same plane, and a surface facing the inner wall in the overlapped part and a surface facing the inner wall in non-overlapped part are on the same plane.

摘要翻译： 一种成膜装置，包括：防沉积板，位于处理室中，在基板上进行成膜处理，以围绕处理室中的处理区域，以在基板上进行处理，并且防止膜沉积材料 附着在所述处理室的内壁上，其中所述防沉积板通过在间隙处布置相应的端部彼此重叠的多个部件板来构造，使得由于膜沉积产生的热膨胀 处理被重叠部分的宽度方向上的多个部件板的两个相邻部件板中的重叠部分的相对运动吸收，并且在重叠部分处设置有凹部，以使得设置在侧面连通 处理区域大于另一侧所设置的处理区域 两个相邻部件板的相应端部彼此重叠，并且与重叠部分中的处理区域相对的表面和与非重叠部分中的处理区域相对的表面在同一平面上，并且面向内部 重叠部分的壁和面向非重叠部分的内壁的表面在同一平面上。

公开(公告)号：US09425029B2

公开(公告)日：2016-08-23

申请号：US14597523

申请日：2015-01-15

申请人： CANON ANELVA CORPORATION

发明人： Yoshihiro Muto ,  Ryuji Higashisaka ,  Satoshi Yamada

IPC分类号： C23C16/54 ,  C23C14/50 ,  C23C14/54 ,  C23C14/34 ,  C23C14/04 ,  H01J37/34 ,  C23C14/56 ,  H01J37/32 ,  B05C13/02

CPC分类号： H01J37/3441 ,  B05C13/02 ,  C23C14/042 ,  C23C14/34 ,  C23C14/564 ,  C23C14/568 ,  C23C16/54 ,  H01J37/32651 ,  H01J37/3447

摘要： A processing apparatus includes a supply source including a first supply source and a second supply source arranged to respectively face a first surface of a substrate and a second surface on an opposite side of the first surface. The supply source is configured to supply a material to apply a process to the substrate. A shield member includes a first shield provided around the first supply source and a second shield provided around the second supply source, the first shield and the second shield being arranged to sandwich the substrate. A moving device is configured to move the first shield and the second shield to set one of a close state in which the first shield and the second shield are close to each other and a separate state in which the first shield and the second shield are separate from each other.

摘要翻译： 一种处理装置，包括：供给源，包括第一供给源和第二供给源，所述第一供应源和第二供给源分别面对基板的第一表面和与所述第一表面相反的一侧的第二表面。 供应源被配置为提供材料以将过程施加到基板。 屏蔽构件包括围绕第一电源提供的第一屏蔽件和围绕第二电源设置的第二屏蔽件，第一屏蔽件和第二屏蔽件布置成夹持基板。 移动装置被配置为移动第一屏蔽件和第二屏蔽件以将第一屏蔽件和第二屏蔽件彼此靠近的闭合状态中的一个以及第一屏蔽件和第二屏蔽件分离的单独状态 从彼此。

公开(公告)号：US09368331B2

公开(公告)日：2016-06-14

申请号：US14751595

申请日：2015-06-26

申请人： CANON ANELVA CORPORATION

发明人： Masato Shinada ,  Keisuke Ueda

IPC分类号： H01J37/34 ,  C23C14/35 ,  H01J37/32

CPC分类号： H01J37/3441 ,  C23C14/35 ,  H01J37/32651 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3461

摘要： The present invention provides a highly efficient magnetron sputtering apparatus in which a ground shield made of a magnetic material is disposed on the outer circumference of a target, the sputtering apparatus being capable of reducing unintended discharge between a cathode and the ground shield. The sputtering apparatus according to an embodiment includes: a backing plate connected to a power supply and having a target mounting surface; a magnet disposed on the back surface of the backing plate; a grounded shield containing a magnetic material and surrounding the target mounting surface; and a fixation part located between the shield and the backing plate at an outer circumference of the target mounting surface and serving as a magnetic member. This structure reduces magnetic field lines which pass through a space between the shield and the fixation part.

摘要翻译： 本发明提供了一种高效率的磁控管溅射装置，其中由磁性材料制成的接地屏蔽设置在靶的外周上，该溅射装置能够减少阴极和接地屏蔽之间的非预期放电。 根据实施例的溅射装置包括：连接到电源并具有目标安装表面的背板; 设置在背板的后表面上的磁体; 包含磁性材料并围绕目标安装表面的接地屏蔽; 以及位于所述护罩和所述背板之间的固定部件，位于所述目标安装表面的外周并用作磁性部件。 该结构减少了通过护罩和固定部分之间的空间的磁场线。