公开(公告)号：US20190292651A1

公开(公告)日：2019-09-26

申请号：US16358465

申请日：2019-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： RONGJUN WANG ,  XIAODONG WANG ,  CHAO DU

IPC: C23C14/14 ,  C23C14/34

Abstract: Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.

公开(公告)号：US20180291500A1

公开(公告)日：2018-10-11

申请号：US15482242

申请日：2017-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAODONG WANG ,  RONGJUN WANG ,  HANBING WU

IPC: C23C14/54 ,  H01J37/34 ,  C23C14/34 ,  C23C14/08 ,  C23C14/18 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

Abstract: Methods and apparatus for reducing defects in a workpiece are provided herein. In some embodiments, a sputter deposition target is provided for reducing defects in a workpiece, the target comprising a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm. In other embodiments, a process chamber is provided, the process chamber comprising a chamber body defining an interior volume, a substrate support to support a substrate within the interior volume, a plurality of targets to be sputtered onto the substrate including at least one dielectric target, wherein the dielectric target comprises a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered.

公开(公告)号：US20180240655A1

公开(公告)日：2018-08-23

申请号：US15890694

申请日：2018-02-07

Applicant: APPLIED MATERIALS, INC.

Inventor： HANBING WU ,  ANANTHA K. SUBRAMANI ,  ASHISH GOEL ,  XIAODONG WANG ,  WEI W. WANG ,  RONGJUN WANG ,  CHI HONG CHING

IPC: H01J37/34 ,  H01L43/12

CPC classification number: H01J37/3441 ,  H01J37/3429 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.

公开(公告)号：US20180223421A1

公开(公告)日：2018-08-09

申请号：US15426102

申请日：2017-02-07

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAODONG WANG ,  RONGJUN WANG ,  HANBING WU

IPC: C23C14/34 ,  C23C14/08 ,  C23C14/18 ,  C23C14/58 ,  H01J37/34

Abstract: Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation.