公开(公告)号：US20090121132A1

公开(公告)日：2009-05-14

申请号：US12232972

申请日：2008-09-26

Applicant: Hans W.P. Koops ,  Peter Hoffrogge

Inventor： Hans W.P. Koops ,  Peter Hoffrogge

IPC: G01N23/00

CPC classification number: H01J37/3056 ,  H01J2237/006 ,  H01J2237/162 ,  H01J2237/166 ,  H01J2237/31732 ,  H01J2237/31744

Abstract: A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.

Abstract translation: 提供了一种用于处理工件的材料处理系统。 材料处理通过提供反应气体和能量辐射来激活反应气体到待处理工件的位置的周围。 辐射优选由电子显微镜提供。 电子显微镜的物镜优选设置在电子显微镜的检测器和工件之间。 材料处理系统的气体供应装置包括与处理位置间隔开的阀，阀之间的气体体积和反应气体的出现位置较小。 气体供应装置还包括温度调节的特别冷却的储存器，用于容纳用于反应气体的起始材料。

公开(公告)号：US20080248636A1

公开(公告)日：2008-10-09

申请号：US12065503

申请日：2006-08-30

Applicant: W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

Inventor： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

IPC: H01L21/225 ,  C09K3/00 ,  C01B35/06 ,  C01B35/08 ,  C01B35/10 ,  C07F5/02

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

Abstract translation: 使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。 还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。 在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

公开(公告)号：US20080105833A1

公开(公告)日：2008-05-08

申请号：US11866099

申请日：2007-10-02

Applicant: Jonathan Gerald England ,  Christopher R. Hatem ,  Jay Thomas Scheuer ,  Joseph C. Olson

Inventor： Jonathan Gerald England ,  Christopher R. Hatem ,  Jay Thomas Scheuer ,  Joseph C. Olson

IPC: H01J37/317

CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/182

Abstract: An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.

Abstract translation: 公开了一种用于生产原子或分子离子束的双泵浦模式及其方法的离子注入装置。 在一个特定的示例性实施例中，提供离子注入装置，用于控制对应于正在产生的离子束种类的离子束源壳体内的压力。 离子注入装置可以包括离子束源壳体，其包括用于离子束产生的多个物质。 还可以包括泵送部分以从离子束源壳体排出气体。 可以进一步包括控制器，以根据对应于用于离子束产生的多种物质的种类的泵送参数来控制泵送部分。

公开(公告)号：US20080099674A1

公开(公告)日：2008-05-01

申请号：US11902125

申请日：2007-09-19

Applicant: Johannes Bihr ,  Friedhelm Panteleit ,  Tobias Clauss ,  Michael Budach

Inventor： Johannes Bihr ,  Friedhelm Panteleit ,  Tobias Clauss ,  Michael Budach

IPC: G21K5/00 ,  G01N23/00

CPC classification number: H01J37/301 ,  G03F1/72 ,  G03F1/86 ,  H01J37/244 ,  H01J37/28 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/18 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/2449 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/31744

Abstract: The disclosure relates to a method for manufacturing an object with miniaturized structures. The method involves processing the object by supplying reaction gas during concurrent directing an electron beam onto a location to be processed, to deposit material or ablate material; and inspecting the object by scanning the surface of the object with an electron beam and leading generated backscattered electrons and secondary electrons to an energy selector, reflecting the secondary electrons from the energy selector, detecting the backscattered electrons passing the energy selector and generating an electron microscopic image of the scanned region in dependence on the detected backscattered electrons; and examining the generated electron microscopic image and deciding whether further depositing or ablating of material should be carried out. The disclosure also relates to an electron microscope and a processing system which are adapted for performing the method.

Abstract translation: 本公开涉及一种用于制造具有小型化结构的物体的方法。 该方法涉及通过在同时将电子束引导到待处理的位置，沉积材料或烧蚀材料的同时提供反应气体来处理物体; 并通过用电子束扫描物体的表面来检查物体，并将产生的反向散射电子和二次电子引导到能量选择器，反射来自能量选择器的二次电子，检测通过能量选择器的反向散射电子并产生电子显微镜 依赖于检测到的反向散射电子的扫描区域的图像; 并检查生成的电子显微镜图像，并决定是否进行进一步的沉积或消融材料。 本公开还涉及适于执行该方法的电子显微镜和处理系统。

公开(公告)号：US07351969B2

公开(公告)日：2008-04-01

申请号：US11290688

申请日：2005-12-01

Applicant: Kenji Watanabe ,  Hirosi Sobukawa ,  Nobuharu Noji ,  Tohru Satake ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Mamoru Nakasuji ,  Masahiro Hatakeyama ,  Takeshi Murakami ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Takamitsu Nagai ,  Kazuyoshi Sugihara

Inventor： Kenji Watanabe ,  Hirosi Sobukawa ,  Nobuharu Noji ,  Tohru Satake ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Mamoru Nakasuji ,  Masahiro Hatakeyama ,  Takeshi Murakami ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Takamitsu Nagai ,  Kazuyoshi Sugihara

IPC: G21K7/00

CPC classification number: H01J37/28 ,  H01J37/224 ,  H01J37/244 ,  H01J2237/006 ,  H01J2237/20221 ,  H01J2237/2445 ,  H01J2237/2817

Abstract: An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

Abstract translation: 图像投影型的电子束检查系统包括用于将从电子枪发射的电子束成形为矩形构造的一次电子光学系统，并将成形的电子束施加到要检查的样品表面。 二次电子光学系统收敛从样品发射的二次电子。 检测器通过荧光屏将会聚的二次电子转换成光学图像，并将图像聚焦到线传感器。 一个控制器控制线传感器的电荷转移时间，该线传感器在行传感器中设置的每对相邻像素行之间与用于移动样本的平台的移动速度相关联地传送拾取线图像。

公开(公告)号：US20080073532A1

公开(公告)日：2008-03-27

申请号：US11637769

申请日：2006-12-13

Applicant: Chih-Yu Chao ,  Wen-Jiunn Hsieh

Inventor： Chih-Yu Chao ,  Wen-Jiunn Hsieh

IPC: G21K7/00

CPC classification number: H01J37/26 ,  H01J37/18 ,  H01J2237/006 ,  H01J2237/1405 ,  H01J2237/188 ,  H01J2237/2608

Abstract: An observational liquid/gas environment combined with a specimen chamber and two pole pieces of an electron microscope includes at least two buffer chambers, a plurality of spacers, and a gas source. The buffer chambers are formed by the spacers and the two pole pieces, located at an upper side and a lower side of the specimen chamber respectively. The spacers have inner and outer apertures abutting the buffer chambers. All of the inner and outer apertures are coaxially aligned with one another, crossing a path that the electron beam of the electron microscope passes. The buffer chambers are connected with a gas-pumping source. The gas source is connected with the specimen chamber. The distance between the at least two inner apertures is smaller than that of the two pole pieces. The spacers having the inner apertures are located in the specimen chamber or the electron beam through tunnels.

Abstract translation: 与样品室结合的观察性液体/气体环境和电子显微镜的两个极片包括至少两个缓冲室，多个间隔物和气体源。 缓冲室由分隔件和两个极片分别形成，分别位于试样室的上侧和下侧。 间隔物具有邻接缓冲室的内孔和外孔。 所有内孔和外孔彼此同轴对准，与电子显微镜的电子束通过的路径相交。 缓冲室与气体泵送源连接。 气源与样品室连接。 至少两个内孔之间的距离小于两个极片的距离。 具有内孔的间隔物位于试样室中或电子束通过隧道。

公开(公告)号：US20070278417A1

公开(公告)日：2007-12-06

申请号：US11778272

申请日：2007-07-16

Applicant: Thomas Horsky ,  John Williams

Inventor： Thomas Horsky ,  John Williams

IPC: H01J27/00

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/082 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

公开(公告)号：US20060238133A1

公开(公告)日：2006-10-26

申请号：US11365719

申请日：2006-03-01

Applicant: Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

Inventor： Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

IPC: H01J7/24

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

Abstract: An ion source is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm−3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target sure and the ions of the transported ion beam are implanted into the target.

Abstract translation: 公开了一种离子源，其包括具有受限制的出口孔的离子化室，并被构造成使得离子化室中的气体或蒸气的压力显着高于离子将被提取外部的萃取区域内的压力 电离室。 蒸汽通过电子源直接电离而电离，该电子源位于邻近离子化室的出口孔的区域，以产生从气体或蒸汽的分子到至少10×10 6的密度的离子， SUP> cm -3，同时保持将离子的横向动能限制在小于约0.7eV的条件。 将光束传输到目标物，并将被输送的离子束的离子注入目标物中。

公开(公告)号：US07064491B2

公开(公告)日：2006-06-20

申请号：US10433493

申请日：2001-06-12

Applicant: Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

Inventor： Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

IPC: H01J7/24 ,  H01J27/00

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

Abstract: Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

Abstract translation: 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。

公开(公告)号：US06992290B2

公开(公告)日：2006-01-31

申请号：US09985317

申请日：2001-11-02

Applicant: Kenji Watanabe ,  Hirosi Sobukawa ,  Nobuharu Noji ,  Tohru Satake ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Mamoru Nakasuji ,  Masahiro Hatakeyama ,  Takeshi Murakami ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Takamitsu Nagai ,  Kazuyoshi Sugihara

Inventor： Kenji Watanabe ,  Hirosi Sobukawa ,  Nobuharu Noji ,  Tohru Satake ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Mamoru Nakasuji ,  Masahiro Hatakeyama ,  Takeshi Murakami ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Takamitsu Nagai ,  Kazuyoshi Sugihara

IPC: H01J37/26

CPC classification number: H01J37/28 ,  H01J37/224 ,  H01J37/244 ,  H01J2237/006 ,  H01J2237/20221 ,  H01J2237/2445 ,  H01J2237/2817

Abstract: An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.