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公开(公告)号：US20240234136A9
公开(公告)日：2024-07-11
申请号：US18546063
申请日：2022-03-02
发明人： Jelena Ristic
CPC分类号： H01L21/02507 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/02422 , H01L21/02444 , H01L21/02458 , H01L21/02485 , H01L21/0254 , H01L31/1852 , H01L31/1856 , H01L33/007 , H01L33/0075 , H01L33/0087
摘要： In an embodiment a growth substrate includes a substrate and a buffer layer sequence having a plurality of semiconductor layers based on a nitride semiconductor compound material and a plurality of buffer layers, wherein the semiconductor layers and the buffer layers are arranged alternatingly, and wherein the buffer layers comprise at least one of the following two-dimensional layered materials: graphene, boron nitride, MoS2, WSe2 or fluorographene.
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公开(公告)号：US20240233619A9
公开(公告)日：2024-07-11
申请号：US18278248
申请日：2022-02-22
发明人： Igor STANKE , Julia STOLZ , Marc PHILIPPENS
IPC分类号： G09G3/32
CPC分类号： G09G3/32 , G09G2300/0852 , G09G2310/0275
摘要： A display device includes a first pixel with a first sub-pixel. The display device also includes a second pixel with a second sub-pixel. The first sub-pixel includes a first light-emitting device, a first transistor, and a first driver circuit. The first driver circuit is coupled on its output side to a control terminal of the first transistor. The first transistor is coupled to the first light-emitting device. The second sub-pixel includes a second transistor and a second driver circuit. The second driver circuit is coupled on its output side to a control terminal of the second transistor. The second transistor is coupled to the first light-emitting device.
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公开(公告)号：US20240231135A1
公开(公告)日：2024-07-11
申请号：US18570929
申请日：2021-06-18
发明人： Jens Ebbecke
CPC分类号： G02F1/125 , H01L33/62 , H03H9/02968
摘要： In an embodiment an optoelectronic arrangement includes an optoelectronic component having a layer stack including an active area arranged between a layer of a first conductive type and a layer of a second conductive type, a substrate configured to generate an alternating electrical field at a surface of the substrate, the alternating electrical field having opposing field components and at least one first excitation element arranged on or within the substrate, wherein the optoelectronic component is arranged on the substrate such that the opposing field components of the alternating electrical field are substantially perpendicular to respective layers of the layer stack.
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公开(公告)号：US12025491B2
公开(公告)日：2024-07-02
申请号：US17801533
申请日：2021-02-23
发明人： Andrey Lysov , Tim Boescke
IPC分类号： G01J1/02
CPC分类号： G01J1/0295 , G01J1/0219
摘要： An optoelectronic sensing device may include an optoelectronic detection device configured to detect light and provide an electrical signal as a function of detected light. The device may further include a signal detection device configured to store at least one signal value of the electrical signal in a memory during a time interval of repeating time intervals and to output an indication signal after the time interval has elapsed.
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85.发明公开公开(公告)号：US20240204137A1
公开(公告)日：2024-06-20
申请号：US18554701
申请日：2022-04-05
IPC分类号： H01L33/24 , H01L25/075 , H01L33/62
CPC分类号： H01L33/24 , H01L25/0753 , H01L33/62
摘要： In an embodiment a radiation-emitting semiconductor chip includes a first doped region, an active region adjacent to the first doped region and a second doped region arranged on a side of the active region facing away from the first doped region, wherein the first doped region is structured in a step-like manner and includes several planes in a direction perpendicular to a main extension plane of the semiconductor chip, and wherein the active region covers the first doped region on a side surface and a top surface.
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86.发明公开公开(公告)号：US20240186765A1
公开(公告)日：2024-06-06
申请号：US18553434
申请日：2022-04-13
发明人： Sven Gerhard , Lars Nähle
CPC分类号： H01S5/1082 , H01S5/0207 , H01S5/1057 , H01S5/106 , H01S5/2086 , H01S5/32341
摘要： In an embodiment a method for manufacturing a light-emitting semiconductor chip includes providing a substrate having a main surface with at least one recess, the main surface having a main extension plane along the longitudinal direction and along a transversal direction perpendicular to the longitudinal direction, wherein the substrate has pre-patterning trenches formed along the transversal direction between chip regions and extending along the longitudinal direction, growing the semiconductor layer sequence on the main surface with the at least one recess and forming at least one facet aligned along the transversal direction in the semiconductor layer sequence by an etching process, wherein the facet has a distance of less than or equal to 50 μm from the at least one recess in at least one direction parallel to the main extension plane of the main surface.
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87.发明公开公开(公告)号：US20240162211A1
公开(公告)日：2024-05-16
申请号：US18550337
申请日：2022-02-09
发明人： Christian LAUER , Jens EBBECKE
CPC分类号： H01L25/167 , H01L33/005 , H01L33/025 , H01L33/20 , H01L33/06
摘要： The invention relates to a method for producing an optoelectronic semiconductor chip, component, including the following steps: —providing an epitaxial semiconductor layer sequence with an active zone, which is configured to generate electromagnetic radiation during operation, —structuring the epitaxial semiconductor layer sequence so that at least one lateral surface is produced in the epitaxial semiconductor layer sequence, —introducing aluminum atoms at the lateral surface into the epitaxial semiconductor layer sequence, so that a band gap of the active zone at the lateral surface is increased. The invention also relates to an optoelectronic semiconductor chip.
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公开(公告)号：US20240153928A1
公开(公告)日：2024-05-09
申请号：US18550213
申请日：2022-03-15
IPC分类号： H01L25/075 , H01L33/48 , H01L33/50 , H01L33/60 , H01L33/62
CPC分类号： H01L25/0753 , H01L33/486 , H01L33/507 , H01L33/60 , H01L33/62
摘要： In an embodiment an optoelectronic assembly includes a carrier having at least one contact region, at least one optoelectronic device arranged on the at least one contact region, a beam guiding element having a transparent material, arranged on the carrier, completely encasing the optoelectronic device and at least partially covering surface areas of the optoelectronic device, wherein the beam guiding element sheaths at least three optoelectronic devices and covers the surface areas of the optoelectronic devices, and wherein the optoelectronic devices are configured to generate light of different colors and a transparent conductive layer arranged at the beam guiding element at least in some regions on its surface, wherein the beam guiding element has a recess through which the at least one contact region is exposed on a side of the optoelectronic device facing away from the carrier, and wherein the recess is at least partially filled with a conductive material which is connected to the transparent conductive layer.
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89.发明公开公开(公告)号：US20240145659A1
公开(公告)日：2024-05-02
申请号：US18547417
申请日：2022-04-05
发明人： Matthias Goldbach , Georg Bogner , Theo Kaiser
CPC分类号： H01L33/62 , H01L33/486 , H01L2933/0066
摘要： In an embodiment, a component includes a lead frame, a semiconductor chip and a housing body, wherein the lead frame has a first subregion and a second subregion laterally spaced from the first subregion, wherein the housing body laterally encloses the first subregion and the second subregion and thereby mechanically connects the first subregion to the second subregion, wherein the semiconductor chip is arranged on a mounting surface of the first subregion and is electrically conductively connected to the subregions of the lead frame, wherein the first subregion has a first local elevation, which vertically projects beyond at least one edge region of the first subregion, and, in top view of the mounting surface, at least partially surrounds the semiconductor chip, and wherein, in the top view of the mounting surface, the housing body completely covers the first local elevation and does not cover the semiconductor chip.
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公开(公告)号：US20240135866A1
公开(公告)日：2024-04-25
申请号：US18278248
申请日：2022-02-22
发明人： Igor STANKE , Julia STOLZ , Marc PHILIPPENS
IPC分类号： G09G3/32
CPC分类号： G09G3/32 , G09G2300/0852 , G09G2310/0275
摘要： A display device includes a first pixel with a first sub-pixel. The display device also includes a second pixel with a second sub-pixel. The first sub-pixel includes a first light-emitting device, a first transistor, and a first driver circuit. The first driver circuit is coupled on its output side to a control terminal of the first transistor. The first transistor is coupled to the first light-emitting device. The second sub-pixel includes a second transistor and a second driver circuit. The second driver circuit is coupled on its output side to a control terminal of the second transistor. The second transistor is coupled to the first light-emitting device.
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