- 专利标题: METHOD FOR MANUFACTURING A LIGHT EMITTING SEMICONDUCTOR CHIP AND LIGHT EMITTING SEMICONDUCTOR CHIP
-
申请号: US18553434申请日: 2022-04-13
-
公开(公告)号: US20240186765A1公开(公告)日: 2024-06-06
- 发明人: Sven Gerhard , Lars Nähle
- 申请人: ams-OSRAM International GmbH
- 申请人地址: DE Regensburg
- 专利权人: ams-OSRAM International GmbH
- 当前专利权人: ams-OSRAM International GmbH
- 当前专利权人地址: DE Regensburg
- 优先权: DE 2021109986.2 2021.04.20
- 国际申请: PCT/EP2022/059893 2022.04.13
- 进入国家日期: 2023-09-29
- 主分类号: H01S5/10
- IPC分类号: H01S5/10 ; H01S5/02 ; H01S5/20 ; H01S5/323
摘要:
In an embodiment a method for manufacturing a light-emitting semiconductor chip includes providing a substrate having a main surface with at least one recess, the main surface having a main extension plane along the longitudinal direction and along a transversal direction perpendicular to the longitudinal direction, wherein the substrate has pre-patterning trenches formed along the transversal direction between chip regions and extending along the longitudinal direction, growing the semiconductor layer sequence on the main surface with the at least one recess and forming at least one facet aligned along the transversal direction in the semiconductor layer sequence by an etching process, wherein the facet has a distance of less than or equal to 50 μm from the at least one recess in at least one direction parallel to the main extension plane of the main surface.
信息查询