公开(公告)号：US11264485B2

公开(公告)日：2022-03-01

申请号：US16662333

申请日：2019-10-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Han Wang ,  Ding-Kang Shih ,  Chun-Hsiung Lin ,  Teng-Chun Tsai ,  Zhi-Chang Lin ,  Akira Mineji ,  Yao-Sheng Huang

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/78

摘要： The present disclosure describes an inner spacer structure for a semiconductor device and a method for forming the same. The method for forming the inner spacer structure in the semiconductor device can include forming a vertical structure over a substrate, forming a gate structure over a portion of the vertical structure, exposing sidewalls of the portion of the vertical structure, forming multiple spacers over the sidewalls of the portion of the vertical structure, and forming a void in each of the multiple spacers.

公开(公告)号：US20210391477A1

公开(公告)日：2021-12-16

申请号：US16898717

申请日：2020-06-11

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Lo-Heng Chang ,  Jung-Hung Chang ,  Zhi-Chang Lin ,  Kuo-Cheng Chiang ,  Chih-Hao Wang

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L29/66

摘要： A method of forming a semiconductor device includes forming a fin of alternating layers of semiconductor nanostructures and sacrificial layers, laterally etching sidewall portions of the sacrificial layers, and depositing additional semiconductor material over the sidewalls of the semiconductor nanostructures and sacrificial layers. Following deposition of a dielectric material over the additional semiconductor material and additional etching, the remaining portions of the semiconductor structures and additional semiconductor material collectively form a hammer shape at each opposing side of the fin. Epitaxial source/drain regions formed on the opposing sides of the fin will contact the heads of the hammer shapes.

公开(公告)号：US20210391423A1

公开(公告)日：2021-12-16

申请号：US16901919

申请日：2020-06-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Zhi-Chang Lin ,  Shih-Cheng Chen ,  Jung-Hung Chang ,  Lo-Heng Chang

IPC分类号： H01L29/08 ,  H01L29/66

摘要： Semiconductor device and the manufacturing method thereof are disclosed. An exemplary method comprises alternately forming first semiconductor layers and second semiconductor layers over a substrate, wherein the first semiconductor layers and the second semiconductor layers include different materials and are stacked up along a direction substantially perpendicular to a top surface of the substrate; forming a dummy gate structure over the first and second semiconductor layers; forming a source/drain (S/D) trench along a sidewall of the dummy gate structure; forming inner spacers between edge portions of the first semiconductor layers, wherein the inner spacers are bended towards the second semiconductor layers; and epitaxially growing a S/D feature in the S/D trench, wherein the S/D feature contacts the first semiconductor layers and includes facets forming a recession away from the inner spacers.

公开(公告)号：US20210366716A1

公开(公告)日：2021-11-25

申请号：US17391834

申请日：2021-08-02

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Pei-Yu Wang ,  Zhi-Chang Lin ,  Ching-Wei Tsai ,  Kuan-Lun Cheng

IPC分类号： H01L21/28 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/3213 ,  H01L21/3105 ,  H01L29/66 ,  H01L27/088

摘要： A semiconductor device includes a substrate, a first semiconductor fin and a second semiconductor fin protruding from the substrate, an isolation feature disposed on the substrate and on sidewalls of the first and second semiconductor fins, a gate structure disposed on the isolation feature. The semiconductor device also includes a dielectric fin disposed on the isolation feature and sandwiched between the first and second semiconductor fins. A middle portion of the dielectric fin separates the gate structure into a first gate structure segment engaging the first semiconductor fin and a second gate structure segment engaging the second semiconductor fin.

公开(公告)号：US11158512B2

公开(公告)日：2021-10-26

申请号：US16895464

申请日：2020-06-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jia-Ni Yu ,  Zhi-Chang Lin ,  Wei-Hao Wu ,  Huan-Chieh Su ,  Chung-Wei Hsu ,  Chih-Hao Wang

IPC分类号： H01L21/28 ,  H01L21/762 ,  H01L29/40 ,  H01L29/66 ,  H01L21/768 ,  H01L29/78

摘要： A FinFET device structure is provided. The FinFET device structure includes a substrate, a fin structure formed over the substrate, and an isolation structure formed over the substrate. The fin structure protrudes from the isolation structure. The FinFET device structure further includes a fin isolation structure formed over the isolation structure and a metal gate structure formed over the fin structure and the fin isolation structure.

公开(公告)号：US20210280473A1

公开(公告)日：2021-09-09

申请号：US17314804

申请日：2021-05-07

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tsu-Hsiu Perng ,  Kai-Chieh Yang ,  Zhi-Chang Lin ,  Teng-Chun Tsai ,  Wei-Hao Wu

IPC分类号： H01L21/8238 ,  H01L29/49 ,  H01L29/66 ,  C23C16/04 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78

摘要： A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.

公开(公告)号：US20210167193A1

公开(公告)日：2021-06-03

申请号：US17174990

申请日：2021-02-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Huan-Chieh Su ,  Zhi-Chang Lin ,  Ting-Hung Hsu ,  Jia-Ni Yu ,  Wei-Hao Wu ,  Yu-Ming Lin ,  Chih-Hao Wang

IPC分类号： H01L29/66 ,  H01L27/092 ,  H01L29/51 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/28 ,  H01L21/308

摘要： A semiconductor device includes a first transistor and a second transistor. The first transistor includes: a first source and a first drain separated by a first distance, a first semiconductor structure disposed between the first source and first drain, a first gate electrode disposed over the first semiconductor structure, and a first dielectric structure disposed over the first gate electrode. The first dielectric structure has a lower portion and an upper portion disposed over the lower portion and wider than the lower portion. The second transistor includes: a second source and a second drain separated by a second distance greater than the first distance, a second semiconductor structure disposed between the second source and second drain, a second gate electrode disposed over the second semiconductor structure, and a second dielectric structure disposed over the second gate electrode. The second dielectric structure and the first dielectric structure have different material compositions.

公开(公告)号：US20210126106A1

公开(公告)日：2021-04-29

申请号：US16662333

申请日：2019-10-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Han WANG ,  Ding-Kang Shih ,  Chun-Hsiung Lin ,  Teng-Chun Tsai ,  Zhi-Chang Lin ,  Akira Mineji ,  Yao-Sheng Huang

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/06

摘要： The present disclosure describes an inner spacer structure for a semiconductor device and a method for forming the same. The method for forming the inner spacer structure in the semiconductor device can include forming a vertical structure over a substrate, forming a gate structure over a portion of the vertical structure, exposing sidewalls of the portion of the vertical structure, forming multiple spacers over the sidewalls of the portion of the vertical structure, and forming a void in each of the multiple spacers.

公开(公告)号：US20200381545A1

公开(公告)日：2020-12-03

申请号：US16704110

申请日：2019-12-05

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kuo-Cheng Chiang ,  Zhi-Chang Lin ,  Shih-Cheng Chen ,  Chih-Hao Wang ,  Pei-Hsun Wang ,  Lo-Heng Chang ,  Jung-Hung Chang

IPC分类号： H01L29/78 ,  H01L29/417 ,  H01L29/66

摘要： A semiconductor device and a method of forming the same are provided. A semiconductor device according to the present disclosure includes a first source/drain feature, a second source/drain feature, a first semiconductor channel member and a second semiconductor channel member extending between the first and second source/drain features, and a first dielectric feature and a second dielectric feature each including a first dielectric layer and a second dielectric layer different from the first dielectric layer. The first and second dielectric features are sandwiched between the first and second semiconductor channel members.

公开(公告)号：US20200098759A1

公开(公告)日：2020-03-26

申请号：US16370258

申请日：2019-03-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Huan-Chieh Su ,  Zhi-Chang Lin ,  Ting-Hung Hsu ,  Jia-Ni Yu ,  Wei-Hao Wu ,  Yu-Ming Lin ,  Chih-Hao Wang

IPC分类号： H01L27/092 ,  H01L29/51 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/308 ,  H01L21/28

摘要： A semiconductor device includes a first transistor and a second transistor. The first transistor includes: a first source and a first drain separated by a first distance, a first semiconductor structure disposed between the first source and first drain, a first gate electrode disposed over the first semiconductor structure, and a first dielectric structure disposed over the first gate electrode. The first dielectric structure has a lower portion and an upper portion disposed over the lower portion and wider than the lower portion. The second transistor includes: a second source and a second drain separated by a second distance greater than the first distance, a second semiconductor structure disposed between the second source and second drain, a second gate electrode disposed over the second semiconductor structure, and a second dielectric structure disposed over the second gate electrode. The second dielectric structure and the first dielectric structure have different material compositions.