-
公开(公告)号：US10429729B2
公开(公告)日：2019-10-01
申请号：US15883234
申请日：2018-01-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis Chang , Jen-Hao Yeh , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
IPC: G03F1/24 , G03F7/20 , H01L21/027 , H05G2/00
Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.
-
公开(公告)号：US20190101838A1
公开(公告)日：2019-04-04
申请号：US15898813
申请日：2018-02-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Zi-Wen Chen , Po-Chung Cheng , Chih-Tsung Shih , Li-Jui Chen , Shih-Chang Shih
CPC classification number: G03F7/70925 , G01B11/272 , G01M11/0271 , G03F7/70666 , G03F7/7085 , G03F7/70975 , G03F9/7046 , G03F9/7096
Abstract: Embodiments described herein provide a method for cleaning contamination from sensors in a lithography tool without requiring recalibrating the lithography tool. More particularly, embodiments described herein teach cleaning the sensors using hydrogen radicals for a short period while the performance drifting is still above the drift tolerance. After a cleaning process described herein, the lithography tool can resume production without recalibration.
-
公开(公告)号：US20190004220A1
公开(公告)日：2019-01-03
申请号：US15637910
申请日：2017-06-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai Wu , Yen-Liang Chen , Kai-Hsiung Chen , Po-Chung Cheng , Chih-Ming Ke
CPC classification number: G02B5/1866 , G02B5/18 , G02B5/1861 , G02F1/31 , G03F1/44 , G03F7/2024 , G03F7/70616 , G03F7/70633 , G03H1/26
Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.
-
公开(公告)号：US20240377720A1
公开(公告)日：2024-11-14
申请号：US18779544
申请日：2024-07-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Tsung Shih , Shih-Chang Shih , Li-Jui Chen , Po-Chung Cheng
Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
-
公开(公告)号：US11973302B2
公开(公告)日：2024-04-30
申请号：US18171609
申请日：2023-02-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis Chang , Henry Tong Yee Shian , Alan Tu , Han-Lung Chang , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
IPC: H01S3/104 , H01S3/04 , H01S3/041 , H01S3/10 , H01S3/1123 , H01S3/223 , H01S3/23 , H05G2/00 , H01S3/00
CPC classification number: H01S3/104 , H01S3/1001 , H01S3/2316 , H05G2/008 , H01S3/005 , H01S3/0407 , H01S3/041 , H01S3/10038 , H01S3/10069 , H01S3/1123 , H01S3/2232
Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
-
Patent Agency Ranking
公开(公告)号：US11723141B2
公开(公告)日：2023-08-08
申请号：US17818210
申请日：2022-08-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis Chang , Jen-Hao Yeh , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
CPC classification number: H05G2/008 , G03F7/70033
Abstract: A method for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.
-
公开(公告)号：US11617255B2
公开(公告)日：2023-03-28
申请号：US16178157
申请日：2018-11-01
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Wei-Chih Lai , Han-Lung Chang , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
Abstract: A droplet generator for an extreme ultraviolet imaging tool includes a reservoir for a molten metal, and a nozzle having a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. A gas inlet is connected to the nozzle, and an isolation valve is at the second end of the nozzle configured to seal the nozzle droplet generator from the ambient.
-
公开(公告)号：US11470710B2
公开(公告)日：2022-10-11
申请号：US17135768
申请日：2020-12-28
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Wei-Shin Cheng , Han-Lung Chang , Li-Jui Chen , Po-Chung Cheng , Hsiao-Lun Chang
Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.
-
公开(公告)号：US11294293B2
公开(公告)日：2022-04-05
申请号：US16295510
申请日：2019-03-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai-Hsiung Chen , Po-Chung Cheng
IPC: H01L23/544 , G03F9/00 , G03F7/20
Abstract: Methods of fabricating and using an overlay mark are provided. In some embodiments, the overlay mark includes an upper layer and a lower layer disposed below the upper layer. The lower layer includes a first plurality of compound gratings extending in a first direction and disposed in a first region of the overlay mark, each of the first plurality of compound gratings including one first element and at least two second elements disposed on one side of the first element, and a second plurality of compound gratings extending the first direction and disposed in a second region of the overlay mark, each of the second plurality of compound gratings including one third element and at least two fourth elements on one side of the third element. The first plurality of compound gratings is a mirror image of the second plurality of compound gratings.
-
公开(公告)号：US11272606B2
公开(公告)日：2022-03-08
申请号：US15801225
申请日：2017-11-01
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Shang-Chieh Chien , Po-Chung Cheng , Chia-Chen Chen , Jen-Yang Chung , Li-Jui Chen , Tzung-Chi Fu , Shang-Ying Wu
Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.
-
-
-
-
-
-
-
-
-
Search Results
117
records
(took 0.023 seconds)
