公开(公告)号：US10008580B2

公开(公告)日：2018-06-26

申请号：US15346535

申请日：2016-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Borna J. Obradovic ,  Titash Rakshit ,  Mark S. Rodder

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/06 ,  H01L29/20 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/66522 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205 ,  H01L29/42392 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/66856 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7853 ,  H01L29/78681 ,  H01L29/78696

Abstract: According to an embodiment of the present invention, a method of manufacturing a FET device having a set BTBT leakage and a maximum VDD includes: determining an x value in InxGa1-xAs according to the BTBT leakage and the maximum VDD, and forming a channel utilizing InxGa1-xA, wherein x is not 0.53.

公开(公告)号：US20170077304A1

公开(公告)日：2017-03-16

申请号：US15132960

申请日：2016-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Borna Obradovic ,  Chris Bowen ,  Titash Rakshit ,  Palle Dharmendar ,  Mark Rodder

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7842 ,  H01L21/28247 ,  H01L21/823487 ,  H01L29/42392 ,  H01L29/66522 ,  H01L29/66666 ,  H01L29/66742 ,  H01L29/7827 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/78696

Abstract: A vertical field effect device includes a substrate and a vertical channel including InxGa1-xAs on the substrate. The vertical channel includes a pillar that extends from the substrate and includes opposing vertical surfaces. The device further includes a stressor layer on the opposing vertical surfaces of the vertical channel. The stressor layer includes a layer of epitaxial crystalline material that is epitaxially formed on the vertical channel and that has lattice constant in a vertical plane corresponding to one of the opposing vertical surfaces of the vertical channel that is greater than a corresponding lattice constant of the vertical channel.

Abstract translation: 垂直场效应器件包括衬底和在衬底上包括In x Ga 1-x As的垂直沟道。 垂直通道包括从基板延伸并包括相对的垂直表面的支柱。 该装置还包括在垂直通道的相对的垂直表面上的应力层。 应力层包括外延形成在垂直通道上的外延晶体材料层，并且在垂直平面中具有与垂直沟道的相对垂直表面中的一个相垂直的晶格常数的晶格常数大于垂直沟道的对应晶格常数 渠道。