Abstract:
A soft magnetic undercoat film, a first undercoat film, a second undercoat film, a perpendicular magnetic recording film, and a protective film are provided on a non-magnetic substrate, and the first undercoat film consists of Pt, Pd, or an alloy including at least one among these, and the second undercoat film consists of Ru or an Ru alloy.
Abstract:
An oxidation catalyst is disposed upstream of a diesel particulate filter (DPF) in an exhaust passage of a diesel engine. An electronic control unit (ECU) operates temperature increasing circuit to combust and eliminate particulate matters deposited on the DPF. The ECU determines execution and stoppage of regeneration of the DPF based on a quantity of the particulate matters deposited on the DPF. The ECU increases an exhaust gas recirculation quantity (EGR quantity) during the regeneration to reduce an intake air quantity from the intake air quantity in a non-regeneration period and to achieve a flow rate of the exhaust gas passing through the DPF suitable for the temperature increase. The ECU corrects a valve opening degree of an EGR control valve based on the sensed intake air quantity to reduce a variation in the exhaust gas flow rate.
Abstract:
An inkjet printing head including: a common ink chamber having an outlet; and an individual ink flow path having a pressure chamber and leads ink from the outlet of the common ink chamber to a nozzle through the pressure chamber, wherein the common ink chamber and the individual ink flow path are formed of a plurality of thin plate members having holes formed thereon, the thin plate members being laminated and fixed onto one another by metal-metal junction, and wherein sectional area of the common ink chamber along a planar direction of the thin plate members is configured to be smaller at an end portion where the outlet is provided than at a central portion in a direction of thickness of the plurality of thin plate members.
Abstract:
A substrate-planarizing device and method of using the device comprising a substrate storage stage outside a room, and on a base inside the room, a multi-joint transfer robot, a temporary alignment platform, a movable transfer pad, a grinding process stage in which substrate holders that compose three stages of a substrate loading/unloading stage, a rough grinding stage, a finish grinding stage are arranged in a concentric pattern on the first index rotary table, and a polishing process stage that has a substrate holder table composing a substrate loading/unloading/finish polishing stage as well as a substrate holder table composing a rough polishing stage arranged in a concentric pattern on the second index rotary table.
Abstract:
A semiconductor chip mounted interposer (60) is configured by executing wire bonding between a semiconductor chip (50) and an interposer (20), in which terminals (21) that connect to terminals (51) of the chip (50) and separate terminals (22) are formed, on the upper face of the interposer (20). A semiconductor chip (30) is mounted to the top face of a package substrate (10), the interposer (60) is adhered to the upper portion of the chip (30), and wire bonding is executed between the terminals (22) and terminals (11′). When configuring a semiconductor device with a plurality of semiconductor chips combined into one package in this manner, KGD (Known-Good-Die) can easily be guaranteed for each semiconductor chip, and semiconductor devices can be fabricated with a high yield of good units. Also, the semiconductor chips can be used as-is, without restricting the position, pitch, signal arrangement, or the like, of their terminals.
Abstract:
The magnetoresistive effect element comprises a pinned magnetic layer 16 having a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layer 18 formed on the pinned magnetic layer 16, a free magnetic layer 20 formed on the nonmagnetic spacer layer 18 and formed of a single ferromagnetic layer, a nonmagnetic spacer layer 22 formed on the free magnetic layer 20, and a pinned magnetic layer 24 of a multilayered SAF structure formed on the nonmagnetic spacer layer 22, wherein a magnetization direction of the ferromagnetic layer 16c of the pinned magnetic layer 16, which is nearest the free magnetic layer 20, and a magnetization direction of the ferromagnetic layer 24a of the pinned magnetic layer 24, which is nearest the free magnetic layer 20, are opposite to each other.
Abstract:
A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.
Abstract:
The magnetoresistive effect element comprises a first ferromagnetic layer 50, a nonmagnetic layer 52 formed on the first ferromagnetic layer 50, a second ferromagnetic layer 54 formed on the nonmagnetic layer 52, and a sidewall insulating film 64 formed on the side wall of the second ferromagnetic layer 54. The end of the first ferromagnetic layer 50 is aligned with the end of the sidewall insulating film 64. Whereby the disalignment between the first ferromagnetic layer and the second ferromagnetic layer can be prevented.
Abstract:
A rust inhibitor which ensures the simplicity of application typical for a coating process and can demonstrate excellent characteristics similar to those obtained with a metal spraying method. The rust inhibitor is manufactured by admixing zinc and aluminum as fine powders of inorganic metals, which are manufactured with a stamping mill to have a flaky shape, to a modified silicone resin solution. A silane-type silicone resin is used for the modified silicone resin solution. For example, a mixed solution of an organosilane-type silicone resin and an oligomer-type silane coupling agent and the like is used.
Abstract:
The present invention combines sensor portions 22, 23 of the device for measuring either current flowing through the line from the power inlet to the power outlet or voltage, or both, and bushings 150, 160 installed at either the power inlet or the power outlet, or both, so as to reduce the size of the gas insulating apparatus. Specifically, the above-mentioned sensor portions 22, 23 are installed in the space inside the porcelain tube 15 that constitutes the bushings 150, 160. As this space, it is preferable to use the space on the outer-periphery side of the electric field relaxation member 21 provided inside the porcelain tube 15.