Invention Application
- Patent Title: Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device
- Patent Title (中): 铁磁隧道结，使用磁头的磁头，磁记录装置和磁记忆装置
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Application No.: US11257397Application Date: 2005-10-25
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Publication No.: US20060256484A1Publication Date: 2006-11-16
- Inventor: Masashige Sato , Shinjiro Umehara , Hiroshi Ashida , Kazuo Kobayashi
- Applicant: Masashige Sato , Shinjiro Umehara , Hiroshi Ashida , Kazuo Kobayashi
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Priority: JP2005-142748 20050516
- Main IPC: G11B5/33
- IPC: G11B5/33 ; G11B5/127
Abstract:
A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.
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