公开(公告)号：US08546893B2

公开(公告)日：2013-10-01

申请号：US13004054

申请日：2011-01-11

Applicant: Mohamed N. Darwish ,  Jun Zeng

Inventor： Mohamed N. Darwish ,  Jun Zeng

IPC: H01L29/66

CPC classification number: H01L29/7811 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0856 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/16 ,  H01L29/404 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/7813 ,  H01L29/7823 ,  H01L29/7827 ,  H01L29/7835 ,  H03K17/687

Abstract: N-channel power semiconductor devices in which an insulated field plate is coupled to the drift region, and immobile electrostatic charge is also present at the interface between the drift region and the insulation around the field plate. The electrostatic charge permits OFF-state voltage drop to occur near the source region, in addition to the voltage drop which occurs near the drain region (due to the presence of the field plate).

公开(公告)号：US20130208315A1

公开(公告)日：2013-08-15

申请号：US13825567

申请日：2010-10-01

Applicant: Jun Zeng ,  I-Jong Lin ,  Fabio Giannetti

Inventor： Jun Zeng ,  I-Jong Lin ,  Fabio Giannetti

IPC: G06F3/12

CPC classification number: G06F3/1296 ,  G06F3/1211 ,  G06F3/126 ,  G06F3/1275 ,  G06F3/1285

Abstract: A method separates a print job into a print product and a sequence of tasks. The method estimates a time to setup a machine before executing a task and a time for the machine to execute the task. Machines are identified that have a potential bottleneck due to multiple concurrent printing requests being made to a machine. A workflow sequence is generated to complete the print job.

Abstract translation: 一种将打印作业分离成打印产品和一系列任务的方法。 该方法估计在执行任务之前设置机器的时间和机器执行任务的时间。 由于对机器进行多次同时打印请求，识别出具有潜在瓶颈的机器。 生成工作流序列以完成打印作业。

公开(公告)号：US08378416B2

公开(公告)日：2013-02-19

申请号：US12626589

申请日：2009-11-25

Applicant: Mohamed N. Darwish ,  Jun Zeng

Inventor： Mohamed N. Darwish ,  Jun Zeng

IPC: H01L29/78

CPC classification number: H01L29/7802 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1079 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/408 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4975 ,  H01L29/7811 ,  H01L29/7813

Abstract: MOS-gated devices, related methods, and systems for vertical power and RF devices including an insulated trench and a gate electrode. A body region is positioned so that a voltage bias on the gate electrode will cause an inversion layer in the body region. Permanent electrostatic charges are included in said insulation material. A conductive shield layer is positioned above the insulated trench, to reduce parasitic capacitances.

公开(公告)号：US08348393B2

公开(公告)日：2013-01-08

申请号：US12867266

申请日：2008-03-17

Applicant: Adel Jilani ,  David Pidwerbecki ,  Jun Zeng ,  Hui Liu ,  James R. Przybyla

Inventor： Adel Jilani ,  David Pidwerbecki ,  Jun Zeng ,  Hui Liu ,  James R. Przybyla

IPC: B41J2/045

CPC classification number: B41J2/14233 ,  B41J2002/14403 ,  B41J2202/11

Abstract: A print head (20, 220) includes a diaphragm (26) opposite a fluid chamber (21) having a side opening, a first end and a second end. The print head (20, 220) further includes a support (30, 32, 300, 302, 310, 312, 320, 322) extending from a floor (52) of the fluid chamber (21) to the diaphragm (26).

Abstract translation: 打印头（20,220）包括与具有侧开口，第一端和第二端的流体室（21）相对的隔膜（26）。 打印头（20,220）还包括从流体室（21）的底板（52）延伸到隔膜（26）的支撑件（30,32,300,302,310,312,320,322）。

公开(公告)号：US08330213B2

公开(公告)日：2012-12-11

申请号：US12759696

申请日：2010-04-13

Applicant: Mohamed N. Darwish ,  Jun Zeng ,  Richard A. Blanchard

Inventor： Mohamed N. Darwish ,  Jun Zeng ,  Richard A. Blanchard

IPC: H01L29/423

CPC classification number: H01L29/7811 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0873 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/408 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/8611

Abstract: Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.

Abstract translation: 使用重新焊接的沟槽的功率器件在其侧壁处或附近具有永久电荷。 这些沟槽垂直延伸到漂移区域。

公开(公告)号：US08310001B2

公开(公告)日：2012-11-13

申请号：US12394107

申请日：2009-02-27

Applicant: Mohamed N. Darwish ,  Jun Zeng

Inventor： Mohamed N. Darwish ,  Jun Zeng

IPC: H01L29/94

CPC classification number: H01L29/7813 ,  H01L21/26586 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7827 ,  H01L29/7839

Abstract: A vertical device structure includes a volume of semiconductor material, laterally adjoining a trench having insulating material on sidewalls thereof. A gate electrode within the trench is capacitively coupled through the insulating material to a first portion of the semiconducting material. Some portions of the insulating material contain fixed electrostatic charge in a density high enough to invert a second portion of the semiconductor material when no voltage is applied. The inverted portions can be used as induced source or drain extensions, to assure that parasitic are reduced without increasing on-resistance.

Abstract translation: 垂直装置结构包括一半体积的半导体材料，横向邻接在其侧壁上具有绝缘材料的沟槽。 沟槽内的栅电极通过绝缘材料电容耦合到半导体材料的第一部分。 绝缘材料的一些部分含有固定的静电电荷，其密度足够高以在没有施加电压时反转半导体材料的第二部分。 反向部分可用作感应源极或漏极延伸部分，以确保寄生电流在不增加导通电阻的情况下降低。

公开(公告)号：US08304329B2

公开(公告)日：2012-11-06

申请号：US12626523

申请日：2009-11-25

Applicant: Jun Zeng ,  Mohamed N. Darwish

Inventor： Jun Zeng ,  Mohamed N. Darwish

IPC: H01L29/78

CPC classification number: H01L29/7802 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1079 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/408 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4975 ,  H01L29/7811 ,  H01L29/7813

Abstract: Vertical power devices which include an insulated trench containing insulating material and a gate electrode, and related methods. A body region is positioned so that a voltage bias on the gate electrode will cause an inversion layer in the body region. A layer of permanent charge, at or near the sidewall of the trench, provides charge balancing for the space charge in the depleted semiconductor material during the OFF state. A conductive shield layer is positioned below the gate electrode in the insulating material, and reduces capacitive coupling between the gate and the lower part of the trench. This reduces switching losses. In other embodiments, a planar gate electrode controls horizontal carrier injection into the vertical conduction pathway along the trench, while a shield plate lies over the trench itself to reduce capacitive coupling.

Abstract translation: 垂直功率器件，包括绝缘沟槽，包含绝缘材料和栅电极，以及相关方法。 定位体区域，使得栅电极上的电压偏置将在体区域中引起反转层。 在沟槽的侧壁处或其附近的永久电荷层在关闭状态期间为耗尽的半导体材料中的空间电荷提供电荷平衡。 导电屏蔽层位于绝缘材料中的栅电极下方，并且减小栅极与沟槽下部之间的电容耦合。 这减少了开关损耗。 在其他实施例中，平面栅极电极控制沿着沟槽的垂直传导路径的水平载流子注入，而屏蔽板位于沟槽本身上以减小电容耦合。

公开(公告)号：US20120107238A1

公开(公告)日：2012-05-03

申请号：US13244511

申请日：2011-09-25

Applicant: Jun Zeng ,  Qiyin Sun

Inventor： Jun Zeng ,  Qiyin Sun

IPC: A61K51/00 ,  C07H15/24

CPC classification number: C07H15/24 ,  A61K51/04 ,  A61K51/0421 ,  A61K51/0451 ,  A61K51/0453

Abstract: The present disclosure relates to a compound comprising at least one of a carbon or an oxygen isotope and a process for preparing the compound. The process comprises irradiating a compound comprising at least one of a carbon or an oxygen atom using photons or particles having an energy in the range of 20 MeV-430 MeV. The carbon and/or the oxygen atom is then allowed to be converted into a carbon and/or an oxygen positron nuclide through a photonuclear reaction. Provided that the molecular structure of the compound is not disrupted, the compound comprising the carbon and/or the oxygen isotope is prepared. The compound may be used in positron and/or other nuclide imaging to obtain a distribution and/or metabolic image of the compound in a human and/or animal body.

Abstract translation: 本公开涉及包含碳或氧同位素中的至少一种的化合物和制备该化合物的方法。 该方法包括使用具有20MeV-430MeV的能量的光子或颗粒来照射包含至少一个碳原子或氧原子的化合物。 然后通过光子核反应将碳和/或氧原子转化成碳和/或氧正电子核素。 假设化合物的分子结构不被破坏，则制备包含碳和/或氧同位素的化合物。 该化合物可用于正电子和/或其他核素成像中以获得化合物在人和/或动物体内的分布和/或代谢图像。

公开(公告)号：US20120062933A1

公开(公告)日：2012-03-15

申请号：US12879085

申请日：2010-09-10

Applicant: Jun Zeng ,  Eric Hoarau ,  I-Jong Lin

Inventor： Jun Zeng ,  Eric Hoarau ,  I-Jong Lin

IPC: G06F3/12

CPC classification number: G06F3/1217 ,  G06F3/1263 ,  G06F3/1267 ,  G06F3/1282

Abstract: Controlled job release in print manufacturing is disclosed. An exemplary method includes stochastically receiving a plurality of print jobs in a job buffer. The method also includes analyzing factory management parameters. The method also includes generating automated control parameters based on the print jobs in the job buffer and the analyzed factory management parameters. The method also includes releasing the print jobs from the job buffer in a controlled manner using the automated control parameters.

Abstract translation: 披露了印刷制造业的受控作业。 一种示例性方法包括在作业缓冲器中随机接收多个打印作业。 该方法还包括分析工厂管理参数。 该方法还包括基于作业缓冲器中的打印作业和分析的工厂管理参数生成自动化控制参数。 该方法还包括使用自动控制参数以受控的方式从作业缓冲器释放打印作业。

公开(公告)号：US08076719B2

公开(公告)日：2011-12-13

申请号：US12368399

申请日：2009-02-10

Applicant: Jun Zeng ,  Mohamed N. Darwish

Inventor： Jun Zeng ,  Mohamed N. Darwish

IPC: H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/26586 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

Abstract: Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer through a region of vertical doped region. This local dopant zone decreases the minority carrier injection efficiency of the body diode of the device and alters the electric field distribution during the body diode reverse recovery.

Abstract translation: 改进了高可靠性的功率RFP结构和制造和操作过程。 该结构包括在RFP沟槽下面的多个局部掺杂浓缩区域，浮动或延伸并与MOSFET的体层合并或者通过垂直掺杂区域的区域与源层连接。 该局部掺杂剂区域降低器件体二极管的少数载流子注入效率，并改变体二极管反向恢复期间的电场分布。