Drawing candidate line segments extraction system and method and solid
model synthesis system and method
    85.
    发明授权
    Drawing candidate line segments extraction system and method and solid model synthesis system and method 失效
    绘制候选线段提取系统及方法及实体模型综合系统及方法

    公开(公告)号:US6104404A

    公开(公告)日:2000-08-15

    申请号:US534219

    申请日:1995-09-26

    CPC分类号: G06T17/10

    摘要: A technique and system to enhance the synthesis of solid models from two drawings. The two-dimensional coordinates of a vertex are extracted in each of a top view and a front view and, if their x-coordinates are equal to each other, the combination of their Y-coordinate values is determined to be the two-dimensional coordinates of a candidate vertex in a side view. Then, candidate line segments for the side view are extracted from the line segments connecting two candidate vertices. The process does not extract those line segments for which no corresponding line segment exists in the top and front views and those line segments for which corresponding horizontal or vertical line segments exist in the top and front views, but which are not horizontal or vertical in the side view.

    摘要翻译: 一种从两幅图中增强实体模型合成的技术和系统。 在顶视图和前视图中的每一个中提取顶点的二维坐标,并且如果它们的x坐标彼此相等,则将它们的Y坐标值的组合确定为二维坐标 在侧视图中的候选顶点。 然后,从连接两个候选顶点的线段中提取侧视图的候选线段。 该过程不提取在顶视图和前视图中不存在相应的线段的那些线段,以及在顶视图和正视图中存在相应的水平或垂直线段的线段,但在 侧面图。

    Flexure bearing
    86.
    发明授权
    Flexure bearing 失效
    挠性轴承

    公开(公告)号:US6050556A

    公开(公告)日:2000-04-18

    申请号:US37611

    申请日:1998-03-10

    摘要: A flexure bearing unit in a linear drive compressor that supports a piston on a yoke for reciprocating movement within a housing includes a plurality of flat discs each provided with a central opening through which extends the piston and a plurality of outer openings receiving parts of the yoke. The flexure bearing is provided with a plurality of first supports each disposed between adjacent flat discs at the outer peripheral portions of the flat discs for supporting opposite sides of the flat discs at the outer peripheral portions of the flat discs. The flexure bearing is also provided with a plurality of second supports each provided between adjacent flat discs at the inner peripheral portions of the flat discs for supporting opposite sides of the flat discs at the inner peripheral portions of the flat discs. The flat discs each include a plurality of spirally extending slits which each possess oppositely located ends. One end of each slit terminates in the outer peripheral portion of the flat disc that is supported on opposite sides by the first supports and the other end of each slit terminates in the inner peripheral portion of the flat disc that is supported on opposite sides by the second supports.

    摘要翻译: 线性驱动压缩机中的挠曲轴承单元,其支撑在轭架上的活塞用于在壳体内往复运动的多个扁平盘,每个平盘具有中心开口,所述中心开口延伸穿过所述中心开口,多个外部开口容纳所述轭的部分 。 挠曲轴承设置有多个第一支撑件,每个第一支撑件设置在平盘的外周部分的相邻平板之间,用于在平盘的外周部分处支撑平盘的相对侧。 弯曲轴承还设置有多个第二支撑件,每个第二支撑件设置在平盘的内周部分的相邻平板之间,用于支撑扁平盘的内周部分的平盘的相对侧。 平板盘各自包括多个螺旋形延伸的狭缝,每个狭缝具有相对位置的端部。 每个狭缝的一端终止在平盘的外周部分中,其通过第一支撑件支撑在相对侧上,并且每个狭缝的另一端终止在平盘的内周部分中,该平盘的相对侧由 第二支持。

    Connector apparatus
    87.
    发明授权
    Connector apparatus 失效
    连接器装置

    公开(公告)号:US5836775A

    公开(公告)日:1998-11-17

    申请号:US545829

    申请日:1996-10-28

    IPC分类号: G06K7/00 H01R13/633 H01R13/62

    摘要: A connector apparatus for a card-like data processing medium comprises a frame (12) having opposing side walls (16a, 16b) that define a storage space (24a, 24b) of the connector apparatus. One end of the frame (12) defines an insertion inlet (22) for inserting a card-like data processing medium (30) in the storage space. A header containing a terminal array (32) is coupled to the end of the frame opposite the insertion inlet (22). An ejection mechanism (40a, 40b) is provided for ejecting the card-like data processing medium (30) from the storage space by manual operation of a push rod (48) that is coupled to the ejection mechanism (40). Means responsive to a control signal are provided for automatically decoupling the push rod (48) from the ejection mechanism to desable the ejection mechanism.

    摘要翻译: PCT No.PCT / US94 / 05399 Sec。 371日期1996年10月28日第 102(e)日期1996年10月28日PCT 1994年5月13日PCT PCT。 第WO94 / 27343号公报 日期1994年11月24日一种用于卡状数据处理介质的连接器装置包括具有限定连接器装置的存储空间(24a,24b)的相对侧壁(16a,16b)的框架(12)。 框架(12)的一端限定用于将卡状数据处理介质(30)插入存储空间的插入入口(22)。 包含端子阵列(32)的头部被耦合到与插入入口(22)相对的框架的端部。 提供了一种弹出机构(40a,40b),用于通过联接到弹出机构(40)的推杆(48)的手动操作来从存储空间中弹出卡状数据处理介质(30)。 提供了响应于控制信号的装置,用于将推杆(48)与喷射机构自动分离,以使排出机构成为可能。

    Manufacturing method of CMOS transistor
    88.
    发明授权
    Manufacturing method of CMOS transistor 失效
    CMOS晶体管的制造方法

    公开(公告)号:US5756382A

    公开(公告)日:1998-05-26

    申请号:US784354

    申请日:1997-01-23

    IPC分类号: H01L21/8238 H01L21/265

    CPC分类号: H01L21/823814 Y10S148/147

    摘要: Gate electrodes of an N-channel transistor and a P-channel transistor are formed on a semiconductor substrate with a gate insulator therebetween. After conducting a first thermal treatment to the gate electrodes, N-type heavily doped diffusion layers to be a source or a drain of the N-channel transistor are formed using the gate electrode of the N-channel transistor as a mask. After conducting a second thermal treatment to the N-type heavily doped diffusion layers at a lower temperature than that of the first thermal treatment, P-type heavily doped diffusion layers to be a source or a drain of the P-channel transistor are formed using the gate electrode of the P-channel transistor as a mask. Then, a third thermal treatment is conducted to the P-type heavily doped diffusion layers at a lower temperature than that of the second thermal treatment.

    摘要翻译: N沟道晶体管和P沟道晶体管的栅电极形成在半导体衬底上,栅极绝缘体在其间。 在对栅电极进行第一热处理之后,使用N沟道晶体管的栅电极作为掩模来形成作为N沟道晶体管的源极或漏极的N型重掺杂扩散层。 在比第一热处理的温度低的情况下对N型重掺杂扩散层进行第二次热处理之后,使用P型重掺杂扩散层作为P沟道晶体管的源极或漏极,形成为使用 P沟道晶体管的栅电极作为掩模。 然后,在比第二热处理的温度低的温度下对P型重掺杂扩散层进行第三次热处理。

    Receiver
    89.
    发明授权
    Receiver 失效
    接收器

    公开(公告)号:US5749048A

    公开(公告)日:1998-05-05

    申请号:US886665

    申请日:1997-07-02

    申请人: Hiroshi Masuda

    发明人: Hiroshi Masuda

    摘要: A receiver for receiving a broadcast in which data indicating a broadcast station name has been multiplexed to a main signal includes: a receiving circuit constructed in a frequency synthesizer mode; a memory in which a group of frequency data for selecting the broadcast in the receiving circuit, and data on the broadcast station name is registered; a circuit for taking out the data from a signal received by the receiving circuit; a scanner for allowing the receiving circuit to scan the broadcasting zone for the broadcast; and a detector for detecting the received broadcast at the time of the scanning, when the detector has detected the received broadcast during the scanning, the group of the frequency data which has been registered before the start of the scanning, and the data on the broadcast station name is shifted to the data area in the memory, and one group of the frequency data indicating the frequency thus detected, and the data on the broadcast station name for the received broadcast is registered in the data area in the memory which has become empty by the shift.

    摘要翻译: 一种用于接收广播的接收机,其中指示广播台名称的数据已被复用到主信号中,包括:以频率合成器模式构成的接收电路; 记录在接收电路中选择广播的一组频率数据和广播电台名称的数据的存储器; 用于从接收电路接收的信号中取出数据的电路; 用于允许接收电路扫描广播区域以用于广播的扫描仪; 以及检测器,用于在扫描时检测接收到的广播,当检测器在扫描期间检测到接收到的广播时,已经在扫描开始之前登记的频率数据组和广播上的数据 站名被移位到存储器中的数据区域,并且一组频率数据指示如此检测的频率,并且用于所接收的广播的广播站名称上的数据被登记在已经变为空的存储器中的数据区域中 通过转移。

    Manufacturing method of CMOS transistor
    90.
    发明授权
    Manufacturing method of CMOS transistor 失效
    CMOS晶体管的制造方法

    公开(公告)号:US5726071A

    公开(公告)日:1998-03-10

    申请号:US789315

    申请日:1997-01-23

    IPC分类号: H01L21/8238 H01L21/70

    CPC分类号: H01L21/823814 Y10S148/147

    摘要: Gate electrodes of an N-channel transistor and a P-channel transistor are formed on a semiconductor substrate with a gate insulator therebetween. After conducting a first thermal treatment to the gate electrodes, N-type heavily doped diffusion layers to be a source or a drain of the N-channel transistor are formed using the gate electrode of the N-channel transistor as a mask. After conducting a second thermal treatment to the N-type heavily doped diffusion layers at a lower temperature than that of the first thermal treatment. P-type heavily doped diffusion layers to be a source or a drain of the P-channel transistor are formed using the gate electrode of the P-channel transistor as a mask. Then, a third thermal treatment is conducted to the P-type heavily doped diffusion layers at a lower temperature than that of the second thermal treatment.

    摘要翻译: N沟道晶体管和P沟道晶体管的栅电极形成在半导体衬底上,栅极绝缘体在其间。 在对栅电极进行第一热处理之后,使用N沟道晶体管的栅电极作为掩模来形成作为N沟道晶体管的源极或漏极的N型重掺杂扩散层。 在比第一热处理的温度低的温度下对N型重掺杂扩散层进行第二次热处理。 使用P沟道晶体管的栅电极作为掩模来形成作为P沟道晶体管的源极或漏极的P型重掺杂扩散层。 然后,在比第二热处理的温度低的温度下对P型重掺杂扩散层进行第三次热处理。