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125 条记录 (耗时 0.016 秒)

    Clean transfer method and system therefor
    81.
    发明授权
    Clean transfer method and system therefor 失效
    清洁方法及其系统

    公开(公告)号：US5139459A

    公开(公告)日：1992-08-18

    申请号：US662556

    申请日：1991-02-28

    申请人： Tetsuo Takahashi ,  Eisaku Miyauchi ,  Toshihiko Miyajima

    发明人： Tetsuo Takahashi ,  Eisaku Miyauchi ,  Toshihiko Miyajima

    IPC分类号： B65D6/40 ,  B65G49/00 ,  B65G49/07 ,  C23C14/56 ,  H01L21/00 ,  H01L21/677

    CPC分类号： H01L21/67748 ,  H01L21/67126 ,  H01L21/67772 ,  H01L21/67775 ,  Y10S414/139

    摘要： A clean transfer method capable of safely transferring a semiconductor or the like to various apparatus for treating the semiconductor while keeping the environment clean. In the method, the semiconductor is transferred between a vacuum clean box arranged in a clean room and kept at the degree of vacuum of 1 Torr or less and a vacuum chamber arranged in a maintenance room while transfer ports of the vacuum clean box and vacuum chamber are kept air-tightly connected to each other. The vacuum clean box is movably arranged.

    摘要翻译： 一种清洁的转印方法，其能够将半导体等安全地转印到各种用于处理半导体的设备，同时保持环境清洁。 在该方法中，半导体在布置在洁净室中的真空清洁箱之间转移并保持在1Torr以下的真空度，在真空室和真空室的输送口配置在维护室内的真空室 保持彼此气密连接。 真空清洁箱可移动地布置。

    Push-rotation type key switch device
    85.
    发明授权
    Push-rotation type key switch device 失效
    推旋式钥匙开关装置

    公开(公告)号：US4580019A

    公开(公告)日：1986-04-01

    申请号：US604839

    申请日：1984-04-27

    申请人： Tetsuo Takahashi

    发明人： Tetsuo Takahashi

    IPC分类号： H01H27/06

    CPC分类号： H01H27/06

    摘要： Disclosed herein is a push-rotation type key switch device which consists essentially of a lock main body having a rotor which is not capable of sliding in an axial direction, a switch fitted to the rear of the lock main body and a switch operating cam caused to slide backward in the axial direction of the rotor when a key is inserted into the rotor. When the cam is rotated integrally with the rotor in either normal or reverse direction, the switch is turned on and off.

    摘要翻译： 这里公开了一种推旋型钥匙开关装置，其主要由具有不能沿轴向滑动的转子的锁主体，安装在锁主体后部的开关和开关操作凸轮组成 当钥匙插入转子时，沿转子的轴向向后滑动。 当凸轮在正反方向与转子一体旋转时，开关打开和关闭。

    Laminated electronic parts and process for making the same
    86.
    发明授权
    Laminated electronic parts and process for making the same 失效
    层压电子零件和制造相同的工艺

    公开(公告)号：US4322698A

    公开(公告)日：1982-03-30

    申请号：US107742

    申请日：1979-12-27

    申请人： Tetsuo Takahashi ,  Minoru Takaya

    发明人： Tetsuo Takahashi ,  Minoru Takaya

    IPC分类号： H01F17/00 ,  H01F41/04 ,  H03H3/00 ,  H01F17/04 ,  H01F27/40 ,  H03H7/01

    CPC分类号： H01F41/046 ,  H01F17/0013 ,  H01F17/0033 ,  H01F2017/0026 ,  H01F2017/004 ,  Y10T29/4902

    摘要： A chip-shaped laminated electronic part including at least one inductor, which comprises a plurality of sheets of an insulating material, and electrically conductive patterns each formed on the surface of each said sheets, said patterns being so connected to form one or more coils to provide at least one inductor. The electronic part is monolythic and is produced by using printing technique whereby wire-winding operation is eliminated.

    摘要翻译： 一种片状层叠电子部件，包括至少一个电感器，其包括多个绝缘材料片，以及每个形成在每个所述片材的表面上的导电图案，所述图案被连接以形成一个或多个线圈， 提供至少一个电感器。 电子部件是单分子的，并且通过使用消除绕线操作的打印技术来生产。

    Free-cutting structural steel for machines
    87.
    发明授权
    Free-cutting structural steel for machines 失效
    机械自由切割结构钢

    公开(公告)号：US4115111A

    公开(公告)日：1978-09-19

    申请号：US761954

    申请日：1977-01-24

    申请人： Tetsuro Itoh ,  Tetsuo Takahashi ,  Atsuyoshi Kimura ,  Seiichi Yamano

    发明人： Tetsuro Itoh ,  Tetsuo Takahashi ,  Atsuyoshi Kimura ,  Seiichi Yamano

    IPC分类号： C22C38/60

    CPC分类号： C22C38/60

    摘要： The present invention relates to a free-cutting structural steel for machines characterized by containing a range of 30-100 g/steel ton of oxide inclusions mainly composed of SiO.sub.2 40-60%, CaO 13-30% and Al.sub.2 O.sub.3 25-40%, the balance being less than 20% of other oxides and calcium 0.0002-0.0010%, and at least one of the following elements; lead 0.03-0.30% and sulfur 0.035-0.10%.

    摘要翻译： 本发明涉及一种用于机器的自由切割结构钢，其特征在于包含主要由SiO 2 40-60％，CaO 13-30％和Al 2 O 3 25-40％组成的30-100g /钢吨氧化物夹杂物的范围， 余量小于其他氧化物和钙0.0002-0.0010％的钙的20％，以及至少一种以下元素; 铅0.03-0.30％，硫0.035-0.10％。

    Free cutting steel
    88.
    发明授权
    Free cutting steel 失效
    自由切割钢

    公开(公告)号：US3948649A

    公开(公告)日：1976-04-06

    申请号：US447324

    申请日：1974-03-01

    申请人： Tetsuo Takahashi ,  Minoru Yanagida

    发明人： Tetsuo Takahashi ,  Minoru Yanagida

    IPC分类号： C22C38/60

    CPC分类号： C22C38/60

    摘要： A free cutting steel for construction of machines, characterized in that the deoxidation product remaining in the steel has a composition of 40-60% of SiO.sub.2, 10-30% of MnO and 5-25% of Al.sub.2 O.sub.3, the balance being other oxides such as CaO and the sum of contents of SiO.sub.2, MnO and Al.sub.2 O.sub.3 being so adjusted as to be at least 85% of the whole oxides in the deoxidation products, the steel being further incorporated with 0.02 - 0.10% of Pb, and that the non-metallic composite inclusions comprising sulfides and finely divided Pb particles are uniformly dispersed.

    摘要翻译： 一种用于机器结构的自由切割钢，其特征在于，钢中残留的脱氧产物具有40-60％的SiO 2，10-30％的MnO和5-25％的Al 2 O 3的组成，其余的是其它氧化物 作为CaO，将SiO 2，MnO和Al 2 O 3的含量之和调整为脱氧产物中的全部氧化物的85％以上，进一步含有0.02〜0.10％的Pb， 包含硫化物和细碎Pb颗粒的金属复合夹杂物均匀分散。

    Semiconductor device and method for fabricating the same
    90.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08994141B2

    公开(公告)日：2015-03-31

    申请号：US12685180

    申请日：2010-01-11

    申请人： Tetsuo Takahashi ,  Takami Otsuki

    发明人： Tetsuo Takahashi ,  Takami Otsuki

    IPC分类号： H01L29/66 ,  H01L29/40 ,  H01L29/739 ,  H01L29/78 ,  H01L29/06

    CPC分类号： H01L29/063 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/404 ,  H01L29/407 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/7811

    摘要： A semiconductor includes an N-type impurity region provided in a substrate. A P-type RESURF layer is provided at a top face of the substrate in the N-type impurity region. A P-well has an impurity concentration higher than that of the P-type RESURF layer, and makes contact with the P-type RESURF layer at the top face of the substrate in the N-type impurity region. A first high-voltage-side plate is electrically connected to the N-type impurity region, and a low-voltage-side plate is electrically connected to a P-type impurity region. A lower field plate is capable of generating a lower capacitive coupling with the substrate. An upper field plate is located at a position farther from the substrate than the lower field plate, and is capable of generating an upper capacitive coupling with the lower field plate whose capacitance is greater than the capacitance of the lower capacitive coupling.

    摘要翻译： 半导体包括设置在基板中的N型杂质区。 P型RESURF层设置在N型杂质区的衬底顶面。 P阱的杂质浓度比P型RESURF层高，与N型杂质区的衬底顶面的P型RESURF层接触。 第一高电压侧板与N型杂质区电连接，低压侧板与P型杂质区电连接。 下场板能够产生与衬底的较低的电容耦合。 上场板位于比下场板更远离衬底的位置处，并且能够产生与电容大于低容性耦合的电容的下场板的上电容耦合。