公开(公告)号：US09576992B2

公开(公告)日：2017-02-21

申请号：US13435666

申请日：2012-03-30

Applicant: Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

Inventor： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

IPC: H01L27/00 ,  H01L27/146 ,  G06F3/042

CPC classification number: H01L27/14609 ,  G06F3/042 ,  G06F2203/04103

Abstract: Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced.

Abstract translation: 光感测装置可以包括光感测像素中的光传感器晶体管和开关晶体管，该晶体管是氧化物半导体晶体管。 在感光装置中，光感测像素中的光传感器晶体管和开关晶体管可以相邻地形成在一个衬底上，该开关晶体管包括与光传感器晶体管相比较不光敏的沟道材料，并且是 并且光传感器晶体管包括相对光敏的通道材料。 光传感器晶体管可以在通道的表面上包括透明上电极，并且可以向透明上电极施加负电压，由此可以防止或减小负电压方向上的阈值电压偏移。

公开(公告)号：US09118795B2

公开(公告)日：2015-08-25

申请号：US12805723

申请日：2010-08-17

Applicant: Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

Inventor： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

IPC: H01J27/00 ,  H04N9/04 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H04N9/045 ,  H01L27/14643 ,  H04N5/3745

Abstract: Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

Abstract translation: 图像传感器及其操作方法。 图像传感器包括包括多个像素的像素阵列。 多个像素中的每一个包括光电传感器，其电压 - 电流特性根据入射光的能量而变化，并且产生由入射光的能量确定的感测电流; 根据用于复位所述多个像素中的至少一个的复位信号，被激活以产生参考电流的复位单元; 以及转换单元，其将感测电流和参考电流分别转换为感测电压和参考电压。

公开(公告)号：US09117727B2

公开(公告)日：2015-08-25

申请号：US13099806

申请日：2011-05-03

Applicant: I-hun Song ,  Yin Huaxiang ,  Sang-hun Jeon ,  Sung-ho Park

Inventor： I-hun Song ,  Yin Huaxiang ,  Sang-hun Jeon ,  Sung-ho Park

IPC: H01L27/14 ,  H01L27/00 ,  H01L27/146

CPC classification number: H01L27/14681 ,  H01L27/14692

Abstract: Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.

Abstract translation: 示例性实施例公开了晶体管，其制造方法以及包括晶体管的电子器件。 晶体管的有源层可以包括具有不同能带隙的多个材料层（氧化物层）。 有源层可以包括沟道层和感光层。 感光层可以具有单层或多层结构。 当感光层具有多层结构时，感光层可以包括依次层叠在沟道层的表面上的第一材料层和第二材料层。 第一层和第二层可以交替堆叠一次或多次。

公开(公告)号：US09092081B2

公开(公告)日：2015-07-28

申请号：US12923243

申请日：2010-09-10

Applicant: Sung-ho Park ,  Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

Inventor： Sung-ho Park ,  Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

IPC: G06F3/042 ,  G06F3/038 ,  G06F3/041

CPC classification number: G06F3/0386 ,  G06F3/0412

Abstract: A remote touch panel includes a plurality of light sensor cells arranged in two dimensions. Each light sensor cell may include a light-sensitive semiconductor layer and first and second electrodes electrically connected to the light-sensitive semiconductor layer. The remote touch panel may be controlled at a remote distance. For example, a large display apparatus can be easily controlled by using a simple light source device, for example, a laser pointer.

Abstract translation: 远程触摸面板包括以二维布置的多个光传感器单元。 每个光传感器单元可以包括光敏半导体层和电连接到光敏半导体层的第一和第二电极。 远程触摸面板可以被控制在远处。 例如，通过使用简单的光源装置，例如激光指示器，可以容易地控制大型的显示装置。

公开(公告)号：US08917260B2

公开(公告)日：2014-12-23

申请号：US12805722

申请日：2010-08-17

Applicant: Sun-il Kim ,  Chang-jung Kim ,  Sang-hun Jeon ,  I-hun Song ,  Jae-chul Park

Inventor： Sun-il Kim ,  Chang-jung Kim ,  Sang-hun Jeon ,  I-hun Song ,  Jae-chul Park

IPC: G06F3/042 ,  G06F3/041 ,  G06F3/038

CPC classification number: G06F3/0412 ,  G06F3/0386

Abstract: An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel.

Abstract translation: 光学触摸面板可以包括多个感光区域。 多个感光区域可以与显示面板中的像素一体地形成，或者可以形成在显示面板上，以便感测来自光学触摸面板外部的入射光。 驱动光学触摸面板的方法可以包括：在两个时间点之间感测来自多个光感测区域的输出的变化，并且当输出的变化大于或等于第一时间点时，确定存在光学输入 提前定义的参考值。 光感测区域可以与显示面板中的像素一体地形成或形成在显示面板的表面上，用于感测来自光学触摸面板外部的入射光。

公开(公告)号：US08890138B2

公开(公告)日：2014-11-18

申请号：US12929301

申请日：2011-01-13

Applicant: Jae-chul Park ,  I-hun Song ,  Chang-jung Kim

Inventor： Jae-chul Park ,  I-hun Song ,  Chang-jung Kim

IPC: H01L31/0248 ,  H01L27/12 ,  G06F3/041 ,  G02F1/1333 ,  G06F3/042 ,  G02F1/1368

CPC classification number: G02F1/13338 ,  G02F1/1368 ,  G06F3/0412 ,  G06F3/042 ,  H01L27/1225

Abstract: An optical touch panel may be used remotely to control a large-sized display device. According to a method of fabricating the optical touch panel, an optical sensor transistor for sensing light and a switch transistor for drawing data can be formed together on the same substrate by using a relatively simple process. The optical touch panel may include an optical sensor transistor and a switch transistor. The optical sensor transistor may be configured to sense light and the switch transistor may be configured to draw data from the optical sensor transistor. The optical sensor transistor may include a light sensitive oxide semiconductor material as a channel layer. The switch transistor may include a non-light sensitive oxide semiconductor material as a channel layer.

Abstract translation: 可以远程地使用光学触摸面板来控制大型显示装置。 根据制造光学触摸面板的方法，可以通过使用相对简单的工艺在相同的基板上一起形成用于感测光的光学传感器晶体管和用于绘制数据的开关晶体管。 光学触摸面板可以包括光学传感器晶体管和开关晶体管。 光学传感器晶体管可以被配置为感测光，并且开关晶体管可以被配置为从光学传感器晶体管绘制数据。 光传感器晶体管可以包括作为沟道层的光敏氧化物半导体材料。 开关晶体管可以包括作为沟道层的非光敏氧化物半导体材料。

公开(公告)号：US08842095B2

公开(公告)日：2014-09-23

申请号：US12926922

申请日：2010-12-17

Applicant: Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

Inventor： Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

IPC: G06F19/00 ,  G06F3/0354 ,  G06F3/041 ,  G01J1/44 ,  G06F3/038 ,  H01L31/113 ,  H01L27/12 ,  H01L27/146

Abstract: Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified.

公开(公告)号：US20130063400A1

公开(公告)日：2013-03-14

申请号：US13553245

申请日：2012-07-19

Applicant: Seung-eon Ahn ,  I-Hun Song ,  Sang-hun Jeon ,  Young Kim ,  Yong-woo Jeon ,  Chang-jung Kim

Inventor： Seung-eon Ahn ,  I-Hun Song ,  Sang-hun Jeon ,  Young Kim ,  Yong-woo Jeon ,  Chang-jung Kim

IPC: G06F3/042 ,  H01L27/144 ,  H01L31/112

CPC classification number: H01L27/14609 ,  G06F3/0412 ,  G06F3/0421 ,  G06F2203/04103

Abstract: In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and a gate driver configured to provide the light-sensing pixels with a gate voltage and a reset signal that have inverted phases. Each of the light-sensing pixels includes a light sensor transistor configured to sense light and a switch transistor configured to output a light-sensing signal from the light-sensor transistor. The gate driver includes a plurality of gate lines connected to gates of the switch transistors, a plurality of reset lines connected to gates of the light sensor transistors, and a plurality of phase inverters each connected between a corresponding reset line and a gate line. Thus, when a gate voltage is applied to one of the plurality of gate lines, a reset signal with an inversed phase to the gate voltage may be applied to a corresponding reset line.

Abstract translation: 在一个实施例中，光感测装置包括具有排列成行和列的多个感光像素的感光像素阵列; 以及栅极驱动器，被配置为向所述感光像素提供具有反相的栅极电压和复位信号。 每个感光像素包括被配置为感测光的光传感器晶体管和被配置为输出来自光传感器晶体管的光感测信号的开关晶体管。 栅极驱动器包括连接到开关晶体管的栅极的多个栅极线，连接到光传感器晶体管的栅极的多个复位线，以及各自连接在相应的复位线和栅极线之间的多个相位逆变器。 因此，当栅极电压施加到多条栅极线中的一条栅极线时，具有与栅极电压相反的相位的复位信号可被施加到相应的复位线。

公开(公告)号：US20120267513A1

公开(公告)日：2012-10-25

申请号：US13358862

申请日：2012-01-26

Applicant: Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

Inventor： Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

IPC: H01L27/144 ,  H01L31/00

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/14623

Abstract: According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels, a first gate driver, and a signal output unit. Each of the light-sensing pixels may include a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.

Abstract translation: 根据示例实施例，光感测装置可以包括光感测像素阵列，第一栅极驱动器和信号输出单元。 每个感光像素可以包括被配置为感测光的光传感器晶体管，被配置为从光传感器晶体管输出光感测信号的开关晶体管，以及在所述光传感器晶体管的光入射表面上的导电屏蔽膜 开关晶体管。 光传感器晶体管和开关晶体管可以具有相同的氧化物半导体晶体管结构。 第一栅极驱动器可以被配置为向每个感光像素提供栅极电压和负的偏置电压。 信号输出单元可以被配置为从每个感光像素接收光感测信号并输出​​数据信号。

公开(公告)号：US08253134B2

公开(公告)日：2012-08-28

申请号：US12076486

申请日：2008-03-19

Applicant: Sun-il Kim ,  Jae-cheol Lee ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Jae-chul Park

Inventor： Sun-il Kim ,  Jae-cheol Lee ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Jae-chul Park

IPC: H01L29/12 ,  H01L29/04 ,  H01L31/036

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L29/78696

Abstract: An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.

Abstract translation: 提供氧化物薄膜晶体管和制造氧化物TFT的方法。 所述氧化物薄膜晶体管（TFT）包括：栅极; 形成为对应于所述栅极的沟道，以及具有比所述沟道更高功函数的覆盖层; 设置在栅极和沟道之间的栅极绝缘体; 以及源极和漏极，分别接触封盖层的两侧和通道之间，部分地接合覆盖层的顶表面。