公开(公告)号：US20210324517A1

公开(公告)日：2021-10-21

申请号：US17364604

申请日：2021-06-30

申请人： DENSO CORPORATION

发明人： Hiroaki FUJIBAYASHI ,  Yuichi TAKEUCHI

IPC分类号： C23C16/455 ,  C23C16/32

摘要： A semiconductor manufacturing device includes: a thin film formation portion that includes a chamber; and a supply gas unit that introduces a supply gas into the chamber. The supply gas unit includes: multiple supply pipes; a raw material flow rate controller that is installed on each of the multiple supply pipes, and controls a flow rate; a collective pipe that is connected to the multiple supply pipes, and generates a mixed gas; multiple distribution pipes connected to a downstream side of the collective pipe; a pressure controller that is installed on one distribution pipe, and adjusts a mixed gas pressure; and a distribution flow rate controller that is installed on a distribution pipe different from the distribution pipe provided with the pressure controller, and controls a flow rate of the mixed gas.

公开(公告)号：US11142821B2

公开(公告)日：2021-10-12

申请号：US16628785

申请日：2018-06-28

申请人： Seiko Epson Corporation

发明人： Yukimune Watanabe ,  Noriyasu Kawana

IPC分类号： C30B33/08 ,  C23C16/32 ,  C30B25/18 ,  C30B29/04 ,  C30B29/36 ,  H01L21/02

摘要： A single crystal substrate is provided and is characterized in that the single crystal substrate has a foundation substrate provided with a plurality of grooves, which include a first crystal face and a second crystal face opposed to the first crystal face in an inner face thereof, and the extending direction of which is a direction, and an angle formed by the first crystal face and the second crystal face is more than 70.6°. Further, it is preferred that the angle formed by the first crystal face and the second crystal face is 100° or more and 176° or less.

公开(公告)号：US11114295B2

公开(公告)日：2021-09-07

申请号：US16901435

申请日：2020-06-15

申请人： SHOWA DENKO K.K.

发明人： Takashi Aigo ,  Wataru Ito ,  Tatsuo Fujimoto

IPC分类号： H01L21/02 ,  C30B25/16 ,  C30B29/36 ,  H01L21/205 ,  C23C16/32 ,  C30B25/18 ,  C30B25/20 ,  C23C16/02 ,  C23C16/455 ,  C30B29/06

摘要： An epitaxial silicon carbide single crystal wafer having a small depth of shallow pits and having a high quality silicon carbide single crystal thin film and a method for producing the same are provided. The epitaxial silicon carbide single crystal wafer according to the present invention is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 μm or more and 10 μm or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 μm or more and 100 μm or less per hour. According to the present invention, the depth of the shallow pits observed on the surface of the drift layer can be set at 30 nm or less.

公开(公告)号：US11107695B2

公开(公告)日：2021-08-31

申请号：US16718356

申请日：2019-12-18

申请人： Beijing E-Town Semiconductor Technology, Co., LTD ,  Mattson Technology, Inc.

发明人： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  C23C16/32 ,  C23C16/56 ,  H01L29/66

摘要： Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a fluorine and oxygen plasma-based process can be used to smooth a roughened surface of a silicon and/or a silicon containing structure. The process can include generating species from a process gas using an inductive coupling element in a first chamber. The process can include introducing a fluorine containing gas and an oxygen containing gas with the species to create a mixture. The process can further include exposing the silicon and/or the silicon containing structure to the mixture such that the mixture at least partially etches a roughened portion to leave a smoother surface of the silicon and/or the silicon containing structure.

公开(公告)号：US11107683B2

公开(公告)日：2021-08-31

申请号：US16835112

申请日：2020-03-30

申请人： Lam Research Corporation

发明人： David Charles Smith ,  Jon Henri ,  Dennis M. Hausmann ,  Paul C. Lemaire

IPC分类号： H01L21/033 ,  H01L21/02 ,  H01L21/3105 ,  C23C16/04 ,  C23C16/24 ,  C23C16/32 ,  C23C16/36 ,  C23C16/52 ,  H01J37/32

摘要： Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.

公开(公告)号：US20210253485A1

公开(公告)日：2021-08-19

申请号：US17269749

申请日：2018-09-13

申请人： FERROTEC HOLDINGS CORPORATION

发明人： Fumitomo Kawahara ,  Shougo Tsunagi

IPC分类号： C04B35/628 ,  C23C16/32 ,  C04B35/565 ,  C04B41/87

摘要： Provided is a tubular body containing SiC fibers having high thermal conductivity. The tubular body containing SiC fibers includes a SiC fiber layer wound in a tubular form, an inner SiC coating layer covering an inner surface of the SiC fiber layer, and an outer SiC coating layer covering an outer surface of the SiC fiber layer. The inner and outer SiC coating layers are bound to each other in gaps provided in the SiC fiber layer.

公开(公告)号：US11094835B2

公开(公告)日：2021-08-17

申请号：US16483754

申请日：2018-02-20

申请人： Mitsubishi Electric Corporation ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

发明人： Tomoaki Furusho ,  Takanori Tanaka ,  Takeharu Kuroiwa ,  Toru Ujihara ,  Shunta Harada ,  Kenta Murayama

IPC分类号： H01L29/868 ,  C23C16/32 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02 ,  H01L21/205

摘要： It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm−3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm−3.

公开(公告)号：US11091833B2

公开(公告)日：2021-08-17

申请号：US16607463

申请日：2018-04-27

申请人： TOKAI CARBON KOREA CO., LTD

发明人： Dong Wan Jo

IPC分类号： C23C16/32 ,  C23C16/56

摘要： The present invention relates to carbon material having, on the base material, a coating layer that includes TaC, and a method for producing the carbon material. For example, the carbon material may include a base material and a coating layer on the surface of the base material. The coating layer may include TaC, which may have a maximum diffraction peak value on the (111) surface, where diffraction peak values may be generated by diffractions of X-rays in XRD analysis.

公开(公告)号：US20210230743A1

公开(公告)日：2021-07-29

申请号：US17156746

申请日：2021-01-25

申请人： FREE FORM FIBERS, LLC

发明人： Shay L. HARRISON ,  John L. SCHNEITER ,  Joseph PEGNA ,  Ram K. GODUGUCHINTA ,  Kirk L. WILLIAMS ,  Erik G. VAALER

IPC分类号： C23C16/32 ,  C23C16/48 ,  C23C16/56 ,  C01B32/963 ,  C04B35/565 ,  C04B35/626 ,  G21C3/26

摘要： A method of forming a high purity granular material, such as silicon carbide powder. Precursors are added to a reactor; at least part of a fiber is formed in the reactor from the precursors using chemical deposition interacting with said precursors; and the granular material is then formed from the fiber. In one aspect, the chemical deposition may include laser induced chemical vapor deposition. The granular material may be formed by grinding or milling the fiber into the granular material, e.g., ball milling the fiber. In one example, silicon carbide powder having greater than 90% beta crystalline phase purity and less than 0.25% oxygen contamination can be obtained.

公开(公告)号：US11053607B2

公开(公告)日：2021-07-06

申请号：US15780689

申请日：2016-10-11

申请人： Sumitomo Electric Industries, Ltd.

发明人： Keiji Wada ,  Tsutomu Hori ,  Taro Nishiguchi

IPC分类号： B32B3/00 ,  C30B29/36 ,  C30B25/20 ,  H01L21/02 ,  C23C16/32 ,  C30B25/18 ,  H01L21/04 ,  H01L21/78 ,  H01L29/04 ,  H01L29/16 ,  H01L29/34 ,  H01L29/66 ,  H01L29/78

摘要： A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. In a direction parallel to a central region, a ratio of a standard deviation of a carrier concentration of the silicon carbide layer to an average value of the carrier concentration of the silicon carbide layer is less than 5%. The average value of the carrier concentration is more than or equal to 1×1014 cm−3 and less than or equal to 5×1016 cm−3. In the direction parallel to the central region, a ratio of a standard deviation of a thickness of the silicon carbide layer to an average value of the thickness of the silicon carbide layer is less than 5%. The central region has an arithmetic mean roughness (Sa) of less than or equal to 1 nm. The central region has a haze of less than or equal to 50.