Abstract:
A laser system and method having an output laser beam uses an gain medium with one or more output beam transverse profile tailoring (OBTPT) longitudinal strips to tailor the transverse profile of the output laser beam to a desirable shape such as having a symmetrical profile transverse to the direction of propagation of the output laser beam. The laser system has two reflector systems on opposite ends in the long z-axis dimension of the gain medium to form a resonator that outputs the output laser beam following the same long z-axis dimension. In some embodiments the gain medium has a narrow y-axis dimension and a wide x-axis dimension. In these embodiments the OBTPT longitudinal strips have lengths running the long z-axis dimension, widths running the wide x-axis dimension and thicknesses running the narrow y-axis dimension of the gain medium. The widths of the OBTPT longitudinal strips are generally chosen with respect to coupling width of the output laser beam. The OBTPT longitudinal strips are contoured to change their y-axis thicknesses with respect to position along the z-axis so that the output laser beam is formed with a desired transverse profile upon exiting the laser system. Location, number, contouring, and other aspects of the OBTPT longitudinal strips can be varied depending upon the particular output beam tailoring that is desired.
Abstract:
A DF or HF chemical laser gain generator fabricated by a platelet technique in which internal passages are more easily formed because the generator is made as a stack of thin platelets that are separately etched and then stacked together. The gain generator is water cooled through passages formed in it during the platelet fabrication process. Water cooling results in lower and more uniform operating temperatures and gas pressures, allowing the use of stronger metals which facilitate the elimination of supporting structures that can degrade laser beam quality. The fabrication method allows for the elimination of gas dynamic and thermally induced density gradients which further degrade laser beam quality.
Abstract:
A narrow band F2 laser system having two laser subsystems. The first laser subsystem is configured to provide a very narrow band pulsed beam at a first narrow wavelength range corresponding to a first natural emission line of the F2 laser system. This beam is injected into the gain medium of the second laser subsystem in a first direction where the beam is amplified to produce a narrow band pulsed output beam. The seed laser subsystem also produces a second pulsed beam at a second wavelength range corresponding to a second natural emission line of the F2 laser. This line is injected into the gain medium of the second laser subsystem in a second direction opposite said first direction. The second beam is amplified in the gain medium of the second laser subsystem depleting the gain medium of gain potential at the second wavelength range. (This amplified second beam is preferably wasted.) With the gain potential at the second undesired wavelength the range thus reduced the portion of light at the second wavelength range in the output beam is greatly reduced.
Abstract:
The present invention provides a control system for a modular high repetition rate two discharge chamber ultraviolet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. Feedback timing control techniques are provided for controlling the relative timing of the discharges in the two chambers with an accuracy in the range of about 2 to 5 billionths of a second even in burst mode operation. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality.
Abstract:
The present invention provides a wavemeter for an ultraviolet laser capable of long life beam quality monitoring in a pulsed ultraviolet laser system at pulse rates greater than 2000 Hz at pulse energies at 5 mJ or greater. In a preferred embodiment an enhanced illumination configuration reduces per pulse illumination of an etalon by a factor of 28 compared to a popular prior art configuration. Optics are provided in this embodiment which reduce light entering the etalon to only that amount needed to illuminate a linear photo diode array positioned to measure interference patterns produced by the etalon. In this preferred embodiment two sample beams produced by reflections from two surfaces of a beam splitter are diffused by a defractive diffuser and the output of the defractive diffuser is focused on two separate secondary diffusers effectively combining both beams in two separate spectrally equivalent diffuse beams. One beam is used for wavelength and bandwidth measurement and the other beam is used for calibration. In preferred embodiments an etalon chamber contains nitrogen with an oxygen concentration of between 1.6 and 2.4 percent.
Abstract:
A laser component purge system for discharge lasers. The LNP, the output coupler and the wavemeter are contained in sealed chambers each having a purge inlet port and a purge outlet port. Purge gas such as N2 is directed to each of the inlet ports. A purge monitoring system is provided which monitors the purge flow and provides one or more signals to a processor which is programmed to minimize laser timeouts attributable to purge conditions without endangering the purged optical components. In a preferred embodiment, gas exiting the outlet ports are directed to flow monitors which provide the one or more signals to the processor. Purge gas may be exhausted or recirculated.
Abstract:
The present invention provides a gas discharge ultraviolet laser capable of producing a high quality pulsed ultraviolet laser beam at pulse rates greater than 2000 Hz at pulse energies at 5 mJ or greater and having an enclosed beam path at least a portion of which comprises an oxidation agent. In a preferred embodiment a portion of the beam path comprises a sealed chamber containing a gas comprising a small concentration of oxygen. In one preferred embodiment the sealed chamber is an etalon chamber and the contained gas is nitrogen with an oxygen concentration of between 1.6 and 2.4 percent. In another preferred embodiments a small concentration of oxygen is added to the purge gas of a special purge compartment containing optical components exposed to high intensity output laser beam.
Abstract:
A gas discharge modular laser with beam train isolation between laser chamber module and front and rear optics which define the laser resonant cavity. Beam train isolation units isolates the beam train from atmospheric air while permitting quick and easy removal of the laser chamber without disturbing the optics of the resonant cavity. In preferred embodiments, metal bellows units are bolted at only side so that the chamber module can be removed and replaced without unbolting the bellows unit.
Abstract:
A gas discharge laser having a laser chamber with two elongated erodable electrode elements, each having an erodable section and an electrode with support configured to minimize discharge region laser gas turbulence and with the electrode elements being configured to permit gradual erosion over more than 8 billion pulses without causing substantial changes in the shape of electrical discharges between the electrode elements. A pulse power system provides electrical pulses of at least 2J at rates of at least 2 KHz. A blower circulates laser gas between the electrodes at speeds of at least 2 m/s and a heat exchanger is provided to remove heat produced by the blower and the discharges.
Abstract:
A laser with microwave excitation includes a source of microwave radiation coupled to a microwave resonator. The resonator is configured such that the microwave radiation generates an oscillating electric-field perpendicular to the longitudinal axis of the resonator corresponding to the first longitudinal resonator mode standing wave pattern. An excitation cavity, housing at least one gas discharge conduit, is coupled to the microwave resonator along a major portion of the cavity's length. The excitation cavity is configured to be below cutoff.