公开(公告)号：US20100185311A1

公开(公告)日：2010-07-22

申请号：US12617380

申请日：2009-11-12

Applicant: Wen-Yao Hsieh ,  Che-Yu Chiu ,  Anwei Peng ,  Jian-Hung Chen ,  Hsuch-Chen Wu

Inventor： Wen-Yao Hsieh ,  Che-Yu Chiu ,  Anwei Peng ,  Jian-Hung Chen ,  Hsuch-Chen Wu

IPC: G06F17/50 ,  G06G7/66

CPC classification number: G05B19/02 ,  G03F7/70458 ,  G05B19/402 ,  G05B19/41885 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/26 ,  Y10S438/975

Abstract: System and method for automated semiconductor manufacturing is provided. In accordance with one aspect of the present invention, a system for automated semiconductor wafer manufacturing includes a smart overlay control (SOC) database having empirical alignment data related to overlay alignment, and a simulation module communicatively coupled to the SOC database, the simulation module determining a simulated overlay alignment of a wafer on the plurality of photolithography tools in a tool bank based on the empirical alignment data stored in the SOC database. The system also includes a dispatch module communicatively coupled to the SOC database and the simulation module, the dispatch module controlling the dispatch of a wafer to one of a plurality of photolithography tools in a tool bank based at least in part on the simulated overlay alignment.

Abstract translation: 提供了自动半导体制造的系统和方法。 根据本发明的一个方面，一种用于自动半导体晶片制造的系统包括具有与重叠对准相关的经验对准数据的智能覆盖控制（SOC）数据库，以及通信地耦合到SOC数据库的仿真模块，模拟模块确定 基于存储在SOC数据库中的经验对准数据，在工具库中的多个光刻工具上的晶片的模拟覆盖对准。 该系统还包括通信地耦合到SOC数据库和模拟模块的调度模块，调度模块至少部分地基于模拟的覆盖对齐来控制晶片分配到工具库中的多个光刻工具中的一个。

公开(公告)号：US20100104986A1

公开(公告)日：2010-04-29

申请号：US12652760

申请日：2010-01-06

Applicant: Takuya Hagiwara

Inventor： Takuya Hagiwara

IPC: G03F7/20

CPC classification number: G03F7/70466 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70458 ,  H01L21/31144 ,  H01L21/76816

Abstract: In an exposure step, a combination of a first photomask and a second mask is used. The first mask has a real pattern corresponding to the pattern actually formed on the film to be processed, and a dummy pattern added for controlling pattern pitch in the first photomask within a prescribed range; and the second photomask has a pattern isolating a real-pattern-formed region from a dummy-pattern-formed region. In forming the pattern, after forming a film to be processed on a substrate, a first mask is formed on the film to be processed, by lithography, using the first photomask, and a second mask is formed on the film to be processed, by lithography, using the second photomask. Thereafter, the film to be processed is etched and removed using the first and second masks as masks to form the pattern.

Abstract translation: 在曝光步骤中，使用第一光掩模和第二掩模的组合。 第一掩模具有对应于实际形成在待处理的膜上的图案的实际图案，以及添加用于将第一光掩模中的图案间距控制在规定范围内的虚拟图案; 并且第二光掩模具有将实图案形成区域与伪图案形成区域隔离的图案。 在形成图案时，在基板上形成待处理的膜之后，通过光刻法，使用第一光掩模，在待加工的膜上形成第一掩模，并且在被处理膜上形成第二掩模，通过 光刻，使用第二光掩模。 此后，使用第一和第二掩模作为掩模蚀刻并除去待处理的膜以形成图案。

公开(公告)号：US07666577B2

公开(公告)日：2010-02-23

申请号：US12332395

申请日：2008-12-11

Applicant: Takuya Hagiwara

Inventor： Takuya Hagiwara

IPC: G03F7/26 ,  H01L21/027 ,  G03F1/00

CPC classification number: G03F7/70466 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70458 ,  H01L21/31144 ,  H01L21/76816

Abstract: In an exposure step, a combination of a first photomask and a second mask is used. The first mask has a real pattern corresponding to the pattern actually formed on the film to be processed, and a dummy pattern added for controlling pattern pitch in the first photomask within a prescribed range; and the second photomask has a pattern isolating a real-pattern-formed region from a dummy-pattern-formed region. In forming the pattern, after forming a film to be processed on a substrate, a first mask is formed on the film to be processed, by lithography, using the first photomask, and a second mask is formed on the film to be processed, by lithography, using the second photomask. Thereafter, the film to be processed is etched off and removed using the first and second masks as masks to form the pattern.

Abstract translation: 在曝光步骤中，使用第一光掩模和第二掩模的组合。 第一掩模具有对应于实际形成在待处理的膜上的图案的实际图案，以及添加用于将第一光掩模中的图案间距控制在规定范围内的虚拟图案; 并且第二光掩模具有将实图案形成区域与伪图案形成区域隔离的图案。 在形成图案时，在基板上形成待处理的膜之后，通过光刻法，使用第一光掩模，在待加工的膜上形成第一掩模，并且在被处理膜上形成第二掩模，通过 光刻，使用第二光掩模。 此后，使用第一和第二掩模作为掩模蚀刻掉被去除的膜并除去以形成图案。

公开(公告)号：US07423723B2

公开(公告)日：2008-09-09

申请号：US11249596

申请日：2005-10-13

Applicant: Naoto Hirota

Inventor： Naoto Hirota

IPC: G03F7/20

CPC classification number: G03F7/7045 ,  G02F1/134363 ,  G02F1/136204 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136236 ,  G03B27/10 ,  G03F1/144 ,  G03F1/50 ,  G03F7/70358 ,  G03F7/70458

Abstract: A process of manufacturing a liquid crystal display device of transverse electric-field type, wherein a halftone photomask which is used to form a photoresist pattern has a fully light-shielding area preventing UV irradiation of a portion of an active matrix substrate in which a thin-film transistor element is to be formed, so that the photoresist pattern includes a positive resist portion which has a first thickness and which is formed on the above-indicated portion of the substrate. The halftone mask further has a fully light-transmitting area which permits fully UV transmission therethrough to provide the photoresist pattern with a resist-free area which corresponds to a portion of the substrate in which a contact hole serving as a third connection portion connecting an external scanning-line driver circuit and a scanning-line terminal portion through a junction electrode is to be formed. The photoresist pattern also has a positive resist portion which is formed in the other portion of the substrate and which has a second thickness smaller than the first thickness. Also disclosed in a scan-exposing device used in the process is also disclosed.

Abstract translation: 一种制造横电场型液晶显示装置的方法，其中用于形成光致抗蚀剂图案的半色调光掩模具有完全遮光的区域，防止一部分有源矩阵基板的UV照射，其中薄的 要形成光致抗蚀剂图案，使得光致抗蚀剂图案包括具有第一厚度并且形成在基板的上述部分上的正光刻胶部分。 半色调掩模还具有完全透光的区域，其允许完全UV透射通过其中，以使光致抗蚀剂图案具有对应于基板的一部分的无光泽区域，其中用作连接外部的第三连接部分的接触孔 通过接合电极形成扫描线驱动电路和扫描线端子部。 光致抗蚀剂图案也具有形成在基板的另一部分中并具有小于第一厚度的第二厚度的正光刻胶部分。 还公开了在该方法中使用的扫描曝光装置中。

公开(公告)号：US07408655B2

公开(公告)日：2008-08-05

申请号：US11822633

申请日：2007-07-09

Applicant: Erik Roelof Loopstra ,  Leon Martin Levasier ,  Rene Oesterholt

Inventor： Erik Roelof Loopstra ,  Leon Martin Levasier ,  Rene Oesterholt

IPC: G01B11/14

CPC classification number: G03F7/70775 ,  G03F7/70458 ,  G03F7/70516 ,  G03F9/7011 ,  G03F9/7019

Abstract: Lithographic apparatus includes a substrate table and a motion control system for controlling a movement of the substrate table. The motion control system includes at least 3 position detectors constructed for detecting a position of the substrate table. For measuring a position and orientation of the substrate table, each position detector comprises an optical encoder of a single dimensional or multi dimensional type, the optical encoders being arranged for providing together at least 6 position values, at least one position value being provided for each of the 3 dimensions. 3 or more of the at least 3 optical encoders being connected to the substrate table at different locations in the 3 dimensional coordinate system. The motion control system is arranged to calculate the position of the substrate table in the 3 dimensional coordinate system from a subset of at least 3 of the 6 position values and to calculate an orientation of the substrate table with respect to the coordinate system from another subset of at least 3 of the 6 position values. Further, a method for calibrating the position detectors is described.

Abstract translation: 光刻设备包括用于控制衬底台的移动的衬底台和运动控制系统。 运动控制系统包括构造用于检测衬底台的位置的至少3个位置检测器。 为了测量衬底台的位置和取向，每个位置检测器包括一维或多维类型的光学编码器，光学编码器被布置为一起提供至少6个位置值，为每个位置值提供至少一个位置值 的三维。 所述至少3个光学编码器中的3个或更多个在所述三维坐标系中的不同位置连接到所述基板台。 运动控制系统被布置为从6个位置值中的至少3个的子集计算三维坐标系中的衬底台的位置，并且从另一个子集计算相对于坐标系的衬底台的取向 至少6个位置值中的3个。 此外，描述了用于校准位置检测器的方法。

公开(公告)号：US20070275311A1

公开(公告)日：2007-11-29

申请号：US11681325

申请日：2007-03-02

Applicant: Cheng-Chi Wang

Inventor： Cheng-Chi Wang

IPC: G03C5/00 ,  G03F1/00

CPC classification number: G03F7/2024 ,  G03F7/70458 ,  G03F7/70466 ,  G03F7/70791 ,  G03F9/7084

Abstract: A method includes exposing a photo-resist layer using a first exposure machine that has a first resolution to cause the photo-resist layer to have an exposed portion and an un-exposed portion. The photo-resist layer is exposed using a second exposure machine that has a second resolution to further expose the un-exposed portion of the photo-resist layer, the first resolution being different from the second resolution.

Abstract translation: 一种方法包括使用具有第一分辨率以使光致抗蚀剂层具有暴露部分和未曝光部分的第一曝光机曝光光刻胶层。 使用具有第二分辨率的第二曝光机曝光光致抗蚀剂层，以进一步暴露光致抗蚀剂层的未曝光部分，第一分辨率不同于第二分辨率。

公开(公告)号：US07292312B2

公开(公告)日：2007-11-06

申请号：US11179665

申请日：2005-07-13

Applicant: Erik Roelof Loopstra ,  Leon Martin Levasier ,  Rene Oesterholt

Inventor： Erik Roelof Loopstra ,  Leon Martin Levasier ,  Rene Oesterholt

IPC: G03B27/42 ,  G03B27/58 ,  G03B27/62

CPC classification number: G03F7/70775 ,  G03F7/70458 ,  G03F7/70516 ,  G03F9/7011 ,  G03F9/7019

Abstract: Lithographic apparatus includes a substrate table and a motion control system for controlling a movement of the substrate table. The motion control system includes at least 3 position detectors constructed for detecting a position of the substrate table. For measuring a position and orientation of the substrate table, each position detector comprises an optical encoder of a single dimensional or multi dimensional type, the optical encoders being arranged for providing together at least 6 position values, at least one position value being provided for each of the 3 dimensions. Some of the optical encoders may be connected to the substrate table at different locations in the 3 dimensional coordinate system. The motion control system is arranged to calculate the position of the substrate table in the 3 dimensional coordinate system from a subset of at least 3 of the 6 position values and to calculate an orientation of the substrate table with respect to the coordinate system from another subset of at least 3 of the 6 position values. Further, a method for calibrating the position detectors is presented.

Abstract translation: 光刻设备包括用于控制衬底台的移动的衬底台和运动控制系统。 运动控制系统包括构造用于检测衬底台的位置的至少3个位置检测器。 为了测量衬底台的位置和取向，每个位置检测器包括一维或多维类型的光学编码器，光学编码器被布置为一起提供至少6个位置值，为每个位置值提供至少一个位置值 的三维。 一些光学编码器可以在三维坐标系中的不同位置处连接到基板台。 运动控制系统被布置为从6个位置值中的至少3个的子集计算三维坐标系中的衬底台的位置，并且从另一个子集计算相对于坐标系的衬底台的取向 至少6个位置值中的3个。 此外，提出了一种用于校准位置检测器的方法。

公开(公告)号：US07256871B2

公开(公告)日：2007-08-14

申请号：US10899295

申请日：2004-07-27

Applicant: Erik Roelof Loopstra ,  Leon Martin Levasier ,  Rene Oesterholt

Inventor： Erik Roelof Loopstra ,  Leon Martin Levasier ,  Rene Oesterholt

IPC: G03B27/58 ,  G03B27/42 ,  G03B27/52 ,  G03B27/32

CPC classification number: G03F7/70775 ,  G03F7/70458 ,  G03F7/70516 ,  G03F9/7011 ,  G03F9/7019

Abstract: Lithographic apparatus includes a substrate table and a motion control system for controlling a movement of the substrate table. The motion control system includes at least 3 position detectors constructed for detecting a position of the substrate table. For measuring a position and orientation of the substrate table, each position detector comprises an optical encoder of a single dimensional or multi dimensional type, the optical encoders being arranged for providing together at least 6 position values, at least one position value being provided for each of the 3 dimensions. 3 or more of the at least 3 optical encoders being connected to the substrate table at different locations in the 3 dimensional coordinate system. The motion control system is arranged to calculate the position of the substrate table in the 3 dimensional coordinate system from a subset of at least 3 of the 6 position values and to calculate an orientation of the substrate table with respect to the coordinate system from another subset of at least 3 of the 6 position values. Further, a method for calibrating the position detectors is described.

公开(公告)号：US20070072091A1

公开(公告)日：2007-03-29

申请号：US11371514

申请日：2006-03-08

Applicant: Adlai Smith ,  Robert Hunter

Inventor： Adlai Smith ,  Robert Hunter

IPC: G03F1/00 ,  G03F9/00 ,  G03C5/00

CPC classification number: G03F7/70458 ,  G03F1/44 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7076 ,  Y10S430/143 ,  Y10S430/168

Abstract: An apparatus and method for manufacturing and using a calibrated registration reference wafer in a semiconductor manufacturing facility where an archive media includes etched alignment attributes. Exposing a pattern of complementary alignment attributes onto the archive media such that the pattern of complementary alignment attributes overlay and interlock with the etched alignment attributes thereby forming completed alignment attributes. Then, measuring offsets in the completed alignment attributes and constructing a calibration file for the archive media based upon the offset measurements and other characteristic data of the exposure tool.

公开(公告)号：US07116411B2

公开(公告)日：2006-10-03

申请号：US10926400

申请日：2004-08-26

Applicant: Sangbong Park ,  Jang Fung Chen ,  Armin Liebchen

Inventor： Sangbong Park ,  Jang Fung Chen ,  Armin Liebchen

IPC: G01B9/00 ,  G03B27/32 ,  G03C5/00

CPC classification number: G03F7/70458 ,  G03F7/70108 ,  G03F7/705 ,  G03F7/70525

Abstract: A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target pattern.

Abstract translation: 一种优化用于多个光刻系统的工艺的方法。 该方法包括以下步骤：（a）使用第一光刻系统确定用于给定过程的校准抗蚀剂模型和目标图案; （b）选择待利用的第二光刻系统，以利用所述给定的处理对所述目标图案进行成像，所述第二光刻系统能够被配置为具有多个衍射光学元件中的一个衍射光学元件，所述多个衍射光学元件中的每一个具有对应的变量 用于优化给定衍射光学元件的性能的参数; （c）选择多个衍射光学元件中的一个并利用所选择的多个衍射光学元件中的所选择的一个衍射光学元件，校准的抗蚀剂模型和目标图案来模拟第二光刻系统的成像性能; 以及（d）通过执行遗传算法来优化所述多个衍射光学元件中所选择的一个衍射光学元件的成像性能，所述遗传算法识别所述多​​个衍射光学元件中所选择的一个的参数的值，其优化所述目标图案的成像 。