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    High performance MTJ elements for STT-RAM and method for making the same
    71.
    发明授权
    High performance MTJ elements for STT-RAM and method for making the same 有权
    用于STT-RAM的高性能MTJ元件和制作相同的方法

    公开(公告)号：US08436437B2

    公开(公告)日：2013-05-07

    申请号：US12803191

    申请日：2010-06-21

    Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    IPC: H01L29/82

    CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

    Abstract: A STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and a free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness or an amorphous ferromagnetic layer of Co40Fe40B20 of approximately 15 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

    Abstract translation: 利用自旋角度动量的转移作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元包括IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧穿势垒层，其形成于 被钉扎层的Ar离子等离子体平滑表面和包含大约20埃厚度的Co60Fe20B20的非晶层的自由层或者在3和6的Fe的两个结晶层之间形成约15埃厚度的Co40Fe40B20的非晶铁磁层 埃厚度。 自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。 所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

    Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM
    72.
    发明授权
    Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM 有权
    用于制造自旋转矩（STT）-RAM的高性能MTJ装置的结构和方法

    公开(公告)号：US08138561B2

    公开(公告)日：2012-03-20

    申请号：US12284066

    申请日：2008-09-18

    Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Po-Kang Wang ,  Robert Beach ,  Witold Kula

    Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Po-Kang Wang ,  Robert Beach ,  Witold Kula

    IPC: H01L29/82

    CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

    Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.

    Abstract translation: 公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。 通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层 。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。

    High performance MTJ element for STT-RAM and method for making the same
    73.
    发明授权
    High performance MTJ element for STT-RAM and method for making the same 有权
    用于STT-RAM的高性能MTJ元件和制作相同的方法

    公开(公告)号：US08080432B2

    公开(公告)日：2011-12-20

    申请号：US12803190

    申请日：2010-06-21

    Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    IPC: H01L21/00 ,  H01L21/336 ,  H01L21/461

    CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

    Abstract: A method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

    Abstract translation: 形成利用自旋角动量转移的STT-MTJ MRAM单元的形成方法，作为改变自由层的磁矩方向的机构。 该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层 Co60Fe20B20层。 分别在3和6埃的Fe的两个结晶层之间形成约20埃的厚度。 自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。 所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

    High performance MTJ element for STT-RAM and method for making the same
    75.
    发明申请
    High performance MTJ element for STT-RAM and method for making the same 有权
    用于STT-RAM的高性能MTJ元件和制作相同的方法

    公开(公告)号：US20100261295A1

    公开(公告)日：2010-10-14

    申请号：US12803190

    申请日：2010-06-21

    Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    IPC: H01L21/8246

    CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

    Abstract: A method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20.of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

    Abstract translation: 形成利用自旋角动量转移的STT-MTJ MRAM单元的形成方法，作为改变自由层的磁矩方向的机构。 该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层 分别在3和6埃厚度的Fe的两个结晶层之间形成大约20埃厚度的Co60Fe20B20的层。 自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。 所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

    Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices
    76.
    发明申请
    Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices 有权
    双重图案化和蚀刻用于自旋转移转矩MRAM器件的磁性隧道结结构的方法

    公开(公告)号：US20100240151A1

    公开(公告)日：2010-09-23

    申请号：US12383298

    申请日：2009-03-23

    Applicant: Rodolfo Belen ,  Tom Zhong ,  Witold Kula ,  Chyu-Jiuh Torng

    Inventor： Rodolfo Belen ,  Tom Zhong ,  Witold Kula ,  Chyu-Jiuh Torng

    IPC: H01L21/04

    CPC classification number: H01L27/228 ,  H01L43/12

    Abstract: A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps each followed by two plasma etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers. The hard mask has an upper Ta layer with a thickness of 300 to 400 Angstroms and a lower NiCr layer less than 50 Angstroms thick. The upper Ta layer is etched with a fluorocarbon etch while lower NiCr layer and underlying MTJ layers are etched with a CH3OH. Preferably, a photoresist mask layer is removed by oxygen plasma between the fluorocarbon and CH3OH plasma etches. A lower hard mask layer made of NiCr or the like is inserted to prevent formation and buildup of Ta etch residues that can cause device shunting.

    Abstract translation: 公开了一种用于在STT-MRAM中形成MTJ的方法，其中容易轴CD独立于硬轴CD来确定。 一种方法涉及两个光刻步骤，每个步骤分别采用两个等离子体蚀刻步骤，以在通过MTJ堆叠层传送的硬掩模中形成柱。 硬掩模具有厚度为300至400埃的上层Ta层和小于50埃厚的较低NiCr层。 用氟碳蚀刻蚀刻上层Ta层，同时用CH3OH蚀刻下层NiCr层和下层MTJ层。 优选地，在碳氟化合物和CH 3 OH等离子蚀刻之间的氧等离子体去除光致抗蚀剂掩模层。 插入由NiCr等制成的下部硬掩模层以防止可能导致器件分流的Ta蚀刻残留物的形成和积累。

    Composite hard mask for the etching of nanometer size magnetic multilayer based device
    78.
    发明申请
    Composite hard mask for the etching of nanometer size magnetic multilayer based device 有权
    复合硬掩模用于蚀刻纳米尺寸磁性多层器件

    公开(公告)号：US20090078927A1

    公开(公告)日：2009-03-26

    申请号：US11901999

    申请日：2007-09-20

    Applicant: Rongfu Xiao ,  Chyu-Jiuh Torng ,  Tom Zhong ,  Witold Kula ,  Adam Zhong

    Inventor： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Tom Zhong ,  Witold Kula ,  Adam Zhong

    IPC: H01L29/06 ,  H01L21/02

    CPC classification number: H01L43/12 ,  Y10T428/24736

    Abstract: A composite hard mask is disclosed that enables sub-100 nm sized MTJ cells to be formed for advanced devices such as spin torque MRAMs. The hard mask has a lower non-magnetic metallic layer such as Ru to magnetically isolate an overlying middle metallic spacer such as MnPt from an underlying free layer. The middle metallic spacer provides a height margin during subsequent processing to avoid shorting between a bit line and the MTJ cell in the final device. An upper conductive layer may be made of Ta and is thin enough to allow a MTJ pattern in a thin overlying photoresist layer to be transferred through the Ta during a fluorocarbon etch without consuming all of the photoresist. The MTJ pattern is transferred through the remaining hard mask layers and underlying MTJ stack of layers with a second etch step using a C, H, and O etch gas composition.

    Abstract translation: 公开了一种复合硬掩模，其能够为高级装置（例如自旋扭矩MRAM）形成次100nm大小的MTJ电池。 硬掩模具有较低的非磁性金属层，例如Ru，以将下层的中间金属间隔物（例如MnPt）与下层的自由层磁隔离。 中间金属间隔件在后续处理期间提供高度余量以避免位线和最终装置中的MTJ单元之间的短路。 上导电层可以由Ta制成，并且足够薄以使氟薄膜蚀刻中的薄覆盖光致抗蚀剂层中的MTJ图案能够通过Ta Ta传输而不消耗所有的光致抗蚀剂。 使用C，H和O蚀刻气体组合物，通过第二蚀刻步骤将MTJ图案转移通过剩余的硬掩模层和下面的MTJ堆叠层。

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