Invention Grant
US07352542B2 Enhanced spin-valve sensor with engineered overlayer formed on a free layer
失效
在自由层上形成具有工程覆层的增强型自旋阀传感器
- Patent Title: Enhanced spin-valve sensor with engineered overlayer formed on a free layer
- Patent Title (中): 在自由层上形成具有工程覆层的增强型自旋阀传感器
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Application No.: US10898816Application Date: 2004-07-26
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Publication No.: US07352542B2Publication Date: 2008-04-01
- Inventor: Witold Kula , Alexander M. Zeltser
- Applicant: Witold Kula , Alexander M. Zeltser
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V
- Current Assignee Address: NL Amsterdam
- Agent Walter W. Duft
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A GMR sensor is disclosed for sensing magnetically recorded information on a data storage medium. The sensor includes a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An engineered overlayer is formed on the free layer to decrease free layer magnetic thickness without reducing physical thickness.
Public/Granted literature
- US20050002127A1 Enhanced spin-valve sensor with engineered overlayer Public/Granted day:2005-01-06
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