Magnetic element and method of manufacturing the same
    72.
    发明授权
    Magnetic element and method of manufacturing the same 有权
    磁性元件及其制造方法

    公开(公告)号:US06392525B1

    公开(公告)日:2002-05-21

    申请号:US09472252

    申请日:1999-12-27

    CPC classification number: H01F27/022 H01F3/08 H01F27/34 H01F2017/048

    Abstract: A magnetic element including: a composite magnetic member A containing a metallic magnetic powder in an amount of 50-70 vol. % and a thermosetting resin in an amount of 50-30 vol. %; a magnetic member B that is at least one selected from a ferrite sintered body and a pressed-powder magnetic body of a metallic magnetic powder; and a coil. The magnetic element is characterized in that a magnetic path determined by an arrangement of the coil passes the magnetic member A and the magnetic member B in series and the coil is embedded in the magnetic member A. The present invention also provides a method for manufacturing the magnetic element.

    Abstract translation: 一种磁性元件,包括:含有50-70体积%的金属磁性粉末的复合磁性体A。 %和热固性树脂,其量为50-30vol。 %; 磁性体B,其是选自铁氧体烧结体和金属磁性粉末的压粉体磁体中的至少一种; 和线圈。 磁性元件的特征在于,由线圈的布置确定的磁路通过磁性构件A和磁性构件B串联,并且线圈被嵌入在磁性构件A中。本发明还提供了一种用于制造 磁性元件。

    Signal output circuit with reduced noise in output signal
    73.
    发明授权
    Signal output circuit with reduced noise in output signal 失效
    信号输出电路,输出信号噪声降低

    公开(公告)号:US5838186A

    公开(公告)日:1998-11-17

    申请号:US880071

    申请日:1997-06-20

    CPC classification number: H03K17/164 H03K19/00361

    Abstract: An additional MOS transistor receiving at its control electrode a signal complementary to that applied to control electrodes of MOS transistors is provided between a power supply node and a control electrode line formed by resistors having a significant resistance and interconnecting respective control electrodes of MOS transistors which are connected in parallel and each of which is connected between output signal line and power supply node. When MOS transistors are rendered non-conductive, the additional MOS transistor is rendered conductive. As a result, internal nodes are driven by an inverter and the additional MOS transistor to a power supply voltage, thereby turning off MOS transistors at the same timing. Consequently, through current in a semiconductor output circuit can be suppressed and an output signal has no ringing.

    Abstract translation: 在其控制电极处接收与施加到MOS晶体管的控制电极的信号互补的信号的附加MOS晶体管设置在电源节点和由具有显着电阻的电阻器形成的控制电极线和互连MOS晶体管的各个控制电极 并联连接,每个连接在输出信号线和电源节点之间。 当MOS晶体管变为非导通时,附加MOS晶体管导通。 结果,内部节点由逆变器和附加MOS晶体管驱动到电源电压,从而在相同的定时关断MOS晶体管。 因此,可以抑制半导体输出电路中的电流,并且输出信号没有振​​铃。

    Magnetic recording medium
    74.
    发明授权
    Magnetic recording medium 失效
    磁记录介质

    公开(公告)号:US5783296A

    公开(公告)日:1998-07-21

    申请号:US835022

    申请日:1997-03-27

    Abstract: This invention concerns a magnetic recording medium which comprises a nonmagnetic support, a magnetic layer provided on one surface of the nonmagnetic support and a backcoat layer provided on the other surface of the nonmagnetic support, wherein the nonmagnetic support is provided with such physical properties as Young's moduluses in the longitudinal direction and the lateral direction thereof in the range of 1300-1600 kg/cm.sup.2, respectively, and a breaking elongation in the range of 3-10% and said magnetic recording medium is provided on the magnetic layer side thereof with a convex cupping the magnitude of which is in the range of 0.02-0.20 mm at a width of 3.8 mm. The magnetic recording medium, therefore, realizes perfect head touch even when the thickness of the nonmagnetic support and the thickness of the whole medium are small. Even when the magnetic recording medium is exposed to the mechanical influences and physical influences of aging, it suffers extremely small change in the form (such as, for example, the cupping value) and therefore conserves the head touch and other factors in highly satisfactory state. It suffers occurrence of dropout or head stain only sparingly.

    Abstract translation: 本发明涉及一种磁记录介质,其包括非磁性载体,设置在非磁性载体的一个表面上的磁性层和设置在非磁性载体的另一个表面上的背涂层,其中非磁性载体具有诸如杨氏 在纵向方向和横向方向分别在1300-1600kg / cm2范围内,在3-10%的范围内的断裂伸长率和所述磁记录介质在其磁性层侧上设置有 凸起拔罐,其幅度在宽度为3.8mm的0.02-0.20mm的范围内。 因此,即使当非磁性载体的厚度和整个介质的厚度小时,磁记录介质也实现了完美的头部触摸。 即使当磁记录介质暴露于老化的机械影响和物理影响时,其形状(例如,拔罐值)也发生非常小的变化,因此在令人满意的状态下节省了头部接触等因素 。 只有少量出现辍学或头部染色。

    Planar light source and image reading device
    75.
    发明授权
    Planar light source and image reading device 失效
    平面光源和图像读取装置

    公开(公告)号:US5781311A

    公开(公告)日:1998-07-14

    申请号:US600894

    申请日:1996-02-13

    Abstract: An image reading device includes a planar light source having sufficiently even illumination to allow accurate shading correction to be performed regardless of the position in the auxiliary scanning direction. The image reading device includes a light source, a photoelectric conversion device, a movement device and a computer. The planar light source includes a rod-shaped light-emitting device and a light-guiding plate that receives light from the rod-shaped light-emitting device and emits light from a single surface. The rod-shaped light-emitting device is at least along one lengthwise side of the light-guiding plate. The photoelectric conversion device converts the image into an electrical image signal which is processed by the computer. The movement device moves the photoelectric conversion device in the auxiliary scanning direction, which is substantially perpendicular to the longer lengthwise side of the photoelectric conversion device and substantially perpendicular to the longer lengthwise side of the rod-shaped light-emitting device.

    Abstract translation: 图像读取装置包括具有足够均匀照明的平面光源,以允许执行与辅助扫描方向上的位置无关的精确的阴影校正。 图像读取装置包括光源,光电转换装置,移动装置和计算机。 平面光源包括棒状发光器件和从杆状发光器件接收光并从单个表面发光的导光板。 杆状发光装置至少沿着导光板的一个纵向侧。 光电转换装置将图像转换成由计算机处理的电图像信号。 移动装置使辅助扫描方向移动光电转换装置,该辅助扫描方向基本上垂直于光电转换装置的较长的纵向侧并且基本上垂直于棒状发光装置的较长的纵向侧。

    Semiconductor memory having redundant cells
    77.
    发明授权
    Semiconductor memory having redundant cells 失效
    具有冗余单元的半导体存储器

    公开(公告)号:US5555522A

    公开(公告)日:1996-09-10

    申请号:US434442

    申请日:1995-05-03

    CPC classification number: G11C29/835 G11C29/24

    Abstract: A semiconductor memory comprising a flip-flop circuit, a redundant memory cell row and column, a specific address detecting gate, a transistor, a sense amplifier and a data output buffer. The receipt of a supply potential causes the flip-flop circuit to generate previously stored output status representing the use or the nonuse of the redundant memory cell row and column. Upon detection of a specific address by the specific address detecting gate, the transistor effects a switching operation causing the output status generated by the flip-flop circuit to be output to the outside via the transistor, sense amplifier and data output buffer. This allows the use or the nonuse of the redundant bits to be verified efficiently.

    Abstract translation: 一种半导体存储器,包括触发器电路,冗余存储单元行和列,特定地址检测门,晶体管,读出放大器和数据输出缓冲器。 接收到电源电位使得触发器电路产生表示冗余存储器单元行和列的使用或不使用的先前存储的输出状态。 在通过特定地址检测门检测到特定地址时,晶体管进行切换操作,使得由触发器电路产生的输出状态经由晶体管,读出放大器和数据输出缓冲器输出到外部。 这允许有效地验证冗余位的使用或不使用。

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