公开(公告)号：US20170167862A1

公开(公告)日：2017-06-15

申请号：US15230336

申请日：2016-08-05

Applicant: KLA-Tencor Corporation

Inventor： Thaddeus Gerard Dziura ,  Antonio Arion Gellineau ,  Andrei V. Shchegrov

IPC: G01B15/02 ,  G01N23/201 ,  G01N23/205

CPC classification number: G01B15/02 ,  G01B2210/56 ,  G01N23/201 ,  G01N23/2055

Abstract: Methods and systems for characterizing dimensions and material properties of high aspect ratio, vertically manufactured devices using transmission, small-angle x-ray scattering (T-SAXS) techniques are described herein. Exemplary structures include spin transfer torque random access memory (STT-RAM), vertical NAND memory (V-NAND), dynamic random access memory (DRAM), three dimensional FLASH memory (3D-FLASH), resistive random access memory (Re-RAM), and PC-RAM. In one aspect, T-SAXS measurements are performed at a number of different orientations that are more densely concentrated near the normal incidence angle and less densely concentrated at orientations that are further from the normal incidence angle. In a further aspect, T-SAXS measurement data is used to generate an image of a measured structure based on the measured intensities of the detected diffraction orders. In another further aspect, a metrology system is configured to generate models for combined x-ray and optical measurement analysis.

公开(公告)号：US09518916B1

公开(公告)日：2016-12-13

申请号：US14511810

申请日：2014-10-10

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Alexander Kuznetsov ,  Gregory R. Brady ,  Andrei V. Shchegrov ,  Noam Sapiens ,  John J. Hench

IPC: G01N21/25 ,  G01N21/84

CPC classification number: G06T7/0004 ,  G01B2210/56 ,  G01N21/211 ,  G01N21/255 ,  G01N21/84 ,  G01N21/8422 ,  G01N2201/06113 ,  G03F7/70625 ,  G03F7/70633 ,  G06T7/60 ,  G06T2207/10004 ,  G06T2207/30148

Abstract: Disclosed are apparatus and methods for determining a structure or process parameter value of a target of interest on a semiconductor wafer. A plurality of collection patterns are defined for a spatial light beam controller positioned at a pupil image plane of a metrology tool. For each collection pattern, a signal is collected from a sensor of the metrology tool, and each collected signal represents a combination of a plurality of signals that the spatial light beam controller samples, using each collection pattern, from a pupil image of the target of interest. The collection patterns are selected so that the pupil image is reconstructable based on the collection patterns and their corresponding collection signals. The collected signal for each of the collection patterns is analyzed to determine a structure or process parameter value for the target of interest.

Abstract translation: 公开了用于确定半导体晶片上的感兴趣的目标的结构或过程参数值的装置和方法。 为位于计量工具的光瞳像平面处的空间光束控制器定义了多个收集图案。 对于每个收集图案，从计量工具的传感器收集信号，并且每个收集的信号表示多个信号的组合，空间光束控制器使用每个收集模式从目标的瞳孔图像 利益。 选择收集图案，使得基于收集图案及其对应的收集信号可以重建瞳孔图像。 分析每个收集模式的收集信号，以确定感兴趣的目标的结构或过程参数值。

公开(公告)号：US09412673B2

公开(公告)日：2016-08-09

申请号：US14459516

申请日：2014-08-14

Applicant: KLA-Tencor Corporation

Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

IPC: G06F17/50 ,  H01L21/66 ,  G03F7/20

CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

Abstract translation: 公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。 产生具有浮动和固定关键参数和对应的模拟光谱的变化组合的多个模型。 生成每个模型以基于从这样的未知结构收集的光谱来确定未知结构的一个或多个关键参数。 基于包括多个关键参数和相应的已知光谱中的每一个的多个已知值的参考数据，确定哪一个模型与每个关键参数最佳相关。 对于使用计量工具从未知结构获得的光谱，选择不同的模型并且用于基于确定哪一个模型与每个关键参数最相关的来确定未知结构的关键参数的不同的参数 参考数据。

公开(公告)号：US08982358B2

公开(公告)日：2015-03-17

申请号：US13740464

申请日：2013-01-14

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Gregory Brady ,  Kevin Peterlinz

IPC: G01B11/02 ,  G01B9/02 ,  G01B11/24

CPC classification number: G01B9/02 ,  G01B11/24 ,  G01B2210/56

Abstract: Systems and methods are presented to enhance and isolate residual signals indicative of the speckle field based on measurements taken by optically based metrology systems. Structural irregularities such as roughness and topographical errors give rise to light scattered outside of the specularly reflected component of the diffracted light. The scattered light interferes constructively or destructively with the specular component in a high numerical aperture illumination and detection system to form a speckle field. Various methods of determining residual signals indicative of the speckle field are presented. Furthermore, various methods of determining structural irregularities based on analysis of the residual signals are presented. In various embodiments, illumination with a high degree of spatial coherence is provided over any of a wide range of angles of incidence, multiple polarization channels, and multiple wavelength channels. In addition, diffracted light is collected over a wide range of angles of detection.

Abstract translation: 提出了系统和方法，以基于光学测量系统所采取的测量来增强和分离指示散斑场的残留信号。 诸如粗糙度和形貌错误的结构不规则导致散射在衍射光的镜面反射分量之外的光。 散射光在高数值孔径照明和检测系统中与镜面分量建设性或破坏性地干涉以形成斑点。 提出了确定表示斑点的残余信号的各种方法。 此外，提出了基于剩余信号分析确定结构不规则性的各种方法。 在各种实施例中，在宽范围的入射角，多个极化通道和多个波长通道中的任何一个上提供具有高度空间相干性的照明。 另外，在宽范围的检测角度收集衍射光。

公开(公告)号：US20150058813A1

公开(公告)日：2015-02-26

申请号：US14459516

申请日：2014-08-14

Applicant: KLA-Tencor Corporation

Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

IPC: G06F17/50

CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

Abstract translation: 公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。 产生具有浮动和固定关键参数和对应的模拟光谱的变化组合的多个模型。 生成每个模型以基于从这样的未知结构收集的光谱来确定未知结构的一个或多个关键参数。 基于包括多个关键参数和相应的已知光谱中的每一个的多个已知值的参考数据，确定哪一个模型与每个关键参数最佳相关。 对于使用计量工具从未知结构获得的光谱，选择不同的模型并且用于基于确定哪一个模型与每个关键参数最相关的来确定未知结构的关键参数的不同的参数 参考数据。

公开(公告)号：US20150046118A1

公开(公告)日：2015-02-12

申请号：US14453440

申请日：2014-08-06

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Andrei V. Shchegrov

IPC: G01N21/95 ,  G01B11/02 ,  G01B11/24

CPC classification number: G03F7/70641 ,  G01N21/956 ,  G03F7/70625 ,  H01L22/12 ,  H01L22/30

Abstract: Disclosed are apparatus and methods for determining process or structure parameters for semiconductor structures. A plurality of optical signals is acquired from one or more targets located in a plurality of fields on a semiconductor wafer. The fields are associated with different process parameters for fabricating the one or more targets, and the acquired optical signals contain information regarding a parameter of interest (POI) for a top structure and information regarding one or more underlayer parameters for one or more underlayers formed below such top structure. A feature extraction model is generated to extract a plurality of feature signals from such acquired optical signals so that the feature signals contain information for the POI and exclude information for the underlayer parameters. A POI value for each top structure of each field is determined based on the feature signals extracted by the feature extraction model.

Abstract translation: 公开了用于确定半导体结构的工艺或结构参数的装置和方法。 从位于半导体晶片上的多个场中的一个或多个靶获取多个光信号。 这些场与用于制造一个或多个目标的不同过程参数相关联，并且所获取的光学信号包含关于顶部结构的关注参数（POI）的信息以及关于下面形成的一个或多个底层的一个或多个底层参数的信息 这样的顶级结构。 生成特征提取模型以从所获取的光信号中提取多个特征信号，使得特征信号包含POI的信息，并且排除下层参数的信息。 基于由特征提取模型提取的特征信号来确定每个场的每个顶部结构的POI值。

公开(公告)号：US08879073B2

公开(公告)日：2014-11-04

申请号：US13770202

申请日：2013-02-19

Applicant: KLA-Tencor Corporation

Inventor： Jonathan M. Madsen ,  Andrei V. Shchegrov ,  Michael Bakeman ,  Thaddeus Gerard Dziura ,  Alexander Kuznetsov ,  Bin-Ming (Benjamin) Tsai

IPC: G01B11/14 ,  G01B11/06 ,  G01N21/956

CPC classification number: G01N21/956 ,  G01B11/0625 ,  G01B11/0641 ,  G01B2210/56 ,  G03F7/70683 ,  H01L22/30

Abstract: Methods and systems for enhancing metrology sensitivity to particular parameters of interest are presented. Field enhancement elements (FEEs) are constructed as part of a specimen to enhance the measurement sensitivity of structures of interest present on the specimen. The design of the FEEs takes into account measurement goals and manufacturing design rules to make target fabrication compatible with the overall device fabrication process. Measurement of opaque materials, high-aspect ratio structures, structures with low-sensitivity, or mutually correlated parameters is enhanced by the addition of FEEs. Exemplary measurements include critical dimension, film thickness, film composition, and optical scatterometry overlay. In some examples, a target element includes different FEEs to improve the measurement of different structures of interest. In other examples, different target elements include different FEEs. In some other examples, field enhancement elements are shaped to concentrate an electric field in a thin film deposited over the FEE.

Abstract translation: 提出了用于增强对感兴趣的特定参数的度量敏感性的方法和系统。 场增强元件（FEE）被构造为样本的一部分，以增强样品上存在的感兴趣结构的测量灵敏度。 FEE的设计考虑了测量目标和制造设计规则，使目标制造与整个设备制造过程相兼容。 通过添加FEE，增强不透明材料，高纵横比结构，低灵敏度结构或相互关联的参数的测量。 示例性测量包括临界尺寸，膜厚度，膜组成和光学散射测量覆盖。 在一些示例中，目标元素包括不同的FEE以改善感兴趣的不同结构的测量。 在其他示例中，不同的目标元素包括不同的FEE。 在一些其他示例中，场增强元件被成形为将电场集中在沉积在FEE上的薄膜中。

公开(公告)号：US20140316730A1

公开(公告)日：2014-10-23

申请号：US14252323

申请日：2014-04-14

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Jonathan M. Madsen ,  Stilian Ivanov Pandev ,  Ady Levy ,  Daniel Kandel ,  Michael E. Adel ,  Ori Tadmor

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.

Abstract translation: 提出了直接在器件结构上执行半导体测量的方法和系统。 基于从至少一个设备结构收集的测量训练数据创建测量模型。 训练后的测量模型用于直接从其他晶圆的器件结构收集的测量数据中计算过程参数值，结构参数值或两者。 在一些示例中，收集来自多个目标的测量数据用于模型构建，训练和测量。 在一些示例中，使用与多个目标相关联的测量数据消除或显着降低测量结果中下层的影响，并且能够进行更精确的测量。 用于模型建立，训练和测量收集的测量数据可以通过多种不同测量技术的组合进行的测量得出。

公开(公告)号：US20140240951A1

公开(公告)日：2014-08-28

申请号：US13774025

申请日：2013-02-22

Applicant: KLA-Tencor Corporation

Inventor： Gregory R. Brady ,  Andrei V. Shchegrov ,  Lawrence D. Rotter ,  Derrick Shaughnessy ,  Anatoly Shchemelinin ,  Ilya Bezel ,  Muzammil A. Arain ,  Anatoly A. Vasiliev ,  James Andrew Allen ,  Oleg Shulepov ,  Andrew V. Hill ,  Ohad Bachar ,  Moshe Markowitz ,  Yaron Ish-Shalom ,  Ilan Sela ,  Amnon Manassen ,  Alexander Svizher ,  Maxim Khokhlov ,  Avi Abramov ,  Oleg Tsibulevsky ,  Daniel Kandel ,  Mark Ghinovker

IPC: F21V13/08 ,  F21V13/00 ,  F21V8/00 ,  F21V13/12

CPC classification number: G01J3/10 ,  F21V13/00 ,  F21V13/08 ,  F21V13/12 ,  G01J3/0218 ,  G01J3/12 ,  G02B6/29332 ,  G02B6/29362 ,  G02B6/29388 ,  G02B6/29395 ,  G02B6/3508 ,  G02B6/353 ,  H01J65/04

Abstract: The disclosure is directed to systems for providing illumination to a measurement head for optical metrology. In some embodiments of the disclosure, illumination beams from a plurality of illumination sources are combined to deliver illumination at one or more selected wavelengths to the measurement head. In some embodiments of the disclosure, intensity and/or spatial coherence of illumination delivered to the measurement head is controlled. In some embodiments of the disclosure, illumination at one or more selected wavelengths is delivered from a broadband illumination source configured for providing illumination at a continuous range of wavelengths.

Abstract translation: 本公开涉及用于向用于光学测量的测量头提供照明的系统。 在本公开的一些实施例中，来自多个照明源的照明光束被组合以将一个或多个所选波长的照明传送到测量头。 在本公开的一些实施例中，控制传送到测量头的照明的强度和/或空间相干性。 在本公开的一些实施例中，一个或多个所选波长的照明从配置成在连续波长范围内提供照明的宽带照明源传送。

公开(公告)号：US20130304424A1

公开(公告)日：2013-11-14

申请号：US13887343

申请日：2013-05-05

Applicant: KLA-TENCOR CORPORATION

Inventor： Michael S. Bakeman ,  Andrei V. Shchegrov

IPC: G01N23/201 ,  G01N21/84

Abstract: Methods and systems for performing simultaneous optical scattering and small angle x-ray scattering (SAXS) measurements over a desired inspection area of a specimen are presented. SAXS measurements combined with optical scatterometry measurements enables a high throughput metrology tool with increased measurement capabilities. The high energy nature of x-ray radiation penetrates optically opaque thin films, buried structures, high aspect ratio structures, and devices including many thin film layers. SAXS and optical scatterometry measurements of a particular location of a planar specimen are performed at a number of different out of plane orientations. This increases measurement sensitivity, reduces correlations among parameters, and improves measurement accuracy. In addition, specimen parameter values are resolved with greater accuracy by fitting data sets derived from both SAXS and optical scatterometry measurements based on models that share at least one geometric parameter. The fitting can be performed sequentially or in parallel.

Abstract translation: 提出了在样本的期望检查区域上执行同时光散射和小角X射线散射（SAXS）测量的方法和系统。 SAXS测量结合光学散射测量可以实现高吞吐量测量工具，增加测量能力。 x射线辐射的高能量性质穿透光学不透明的薄膜，掩埋结构，高纵横比结构以及包括许多薄膜层的器件。 平面样本的特定位置的SAXS和光学散射测量测量在多个不同的平面外取向进行。 这增加了测量灵敏度，降低了参数之间的相关性，并提高了测量精度。 此外，通过根据共享至少一个几何参数的模型拟合从SAXS和光学散射测量结果导出的数据集，可以更准确地解决样本参数值。 可以顺序地或并行地执行装配。