公开(公告)号：US20120091590A1

公开(公告)日：2012-04-19

申请号：US13333509

申请日：2011-12-21

Applicant: Bob Kong ,  Zhi-Wen Sun ,  Igor Ivanov ,  Jihong Tong

Inventor： Bob Kong ,  Zhi-Wen Sun ,  Igor Ivanov ,  Jihong Tong

IPC: H01L23/535

CPC classification number: C23C18/44 ,  C23C18/1605 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1844 ,  H01L21/02068 ,  H01L21/0332 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/7687 ,  H01L27/1052 ,  H01L28/65 ,  Y10T428/12493 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/24917

Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.

Abstract translation: 本发明的实施方案描述了使用自引发的无电镀方法在铂膜上选择性镀铂的方法。 特别地，铂膜被镀在厚度小于300埃的非常薄的铜膜上。 还描述了化学镀溶液和所得结构。 该方法在逻辑器件，存储器件和光伏器件的半导体处理中具有应用。

公开(公告)号：US20120090987A1

公开(公告)日：2012-04-19

申请号：US13332760

申请日：2011-12-21

Applicant: Alexander Gorer ,  Zhi-Wen Sun

Inventor： Alexander Gorer ,  Zhi-Wen Sun

IPC: C25D17/00 ,  C25D17/06

CPC classification number: C25D7/123 ,  C25D17/001 ,  C25D21/10

Abstract: Combinatorial electrochemical deposition is described, including dividing a wafer into a plurality of substrates for combinatorial processing, immersing the plurality of substrates at least partially into a plurality of cells, within one integrated tool, including electrolytes, the cells also including electrodes immersed in the electrolytes, depositing layers on the substrates by applying potentials across the substrates and the electrodes, and varying characteristics of the depositing to perform the combinatorial processing.

Abstract translation: 描述了组合电化学沉积，包括将晶片分成多个用于组合处理的基板，将多个基板至少部分地浸入包括电解质的一个集成工具内的多个单元中，所述单元还包括浸入电解质中的电极 通过在基板和电极上施加电位而沉积在基板上，并且改变沉积的特性以执行组合处理。

公开(公告)号：US20110259750A1

公开(公告)日：2011-10-27

申请号：US13150850

申请日：2011-06-01

Applicant: Hooman Hafezi ,  Aron Rosenfeld ,  Zhi-Wen Sun ,  Hua Chung ,  Lei Zhu

Inventor： Hooman Hafezi ,  Aron Rosenfeld ,  Zhi-Wen Sun ,  Hua Chung ,  Lei Zhu

IPC: C25D3/38 ,  C25D5/02 ,  C25D5/34

CPC classification number: C25D5/34 ,  C25D3/38 ,  C25D5/10 ,  C25D5/18 ,  C25D5/54 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is disclosed for depositing a copper seed layer onto a substrate surface. In one embodiment, the method includes providing a substrate having a barrier layer disposed on a substrate surface, wherein the barrier layer has a barrier surface comprising a material selected from the group consisting of cobalt, ruthenium, tungsten, titanium, and a compound of two or more thereof, and exposing the substrate to a non-complexed, acid electrochemical plating solution with a plating bias applied across the substrate surface to deposit a copper-containing seed layer directly on the barrier surface without intervening layer disposed therebetween.

Abstract translation: 公开了一种将铜籽晶层沉积在基底表面上的方法。 在一个实施例中，该方法包括提供具有设置在衬底表面上的阻挡层的衬底，其中阻挡层具有包含选自钴，钌，钨，钛和两种化合物的材料的阻挡表面 或更多，并且将衬底暴露于非复合的酸性电化学电镀溶液，其中跨越衬底表面施加电镀偏压，以将含铜种子层直接沉积在阻挡表面上，而不设置介于其间的中间层。

公开(公告)号：US20110201149A1

公开(公告)日：2011-08-18

申请号：US13096719

申请日：2011-04-28

Applicant: Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

Inventor： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

IPC: H01L21/8239

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

公开(公告)号：US07972897B2

公开(公告)日：2011-07-05

申请号：US11702966

申请日：2007-02-05

Applicant: Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

Inventor： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

IPC: H01L21/00

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

公开(公告)号：US20110151105A1

公开(公告)日：2011-06-23

申请号：US12970638

申请日：2010-12-16

Applicant: Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun ,  Kenneth A. Williams

Inventor： Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun ,  Kenneth A. Williams

IPC: C23C16/52 ,  B05C11/00

CPC classification number: C23C18/1254 ,  B01J19/0046 ,  B01J2219/0036 ,  B01J2219/00443 ,  B01J2219/00691 ,  B01J2219/00702 ,  B01J2219/00756 ,  C40B30/00 ,  C40B60/12 ,  Y10T428/2991

Abstract: Embodiments of the current invention describe a high performance combinatorial method and apparatus for the combinatorial development of coatings by a dip-coating process. The dip-coating process may be used for multiple applications, including forming coatings from varied sol-gel formulations, coating substrates uniformly with particles to combinatorially test particle removal formulations, and the dipping of substrates into texturing formulations to combinatorially develop the texturing formulations.

Abstract translation: 本发明的实施例描述了通过浸涂工艺组合开发涂层的高性能组合方法和装置。 浸涂方法可用于多种应用，包括由不同溶胶 - 凝胶制剂形成涂层，用颗粒均匀地涂覆底物以组合测试颗粒去除配方，以及将基材浸渍到变形配方中以组合开发变形配方。

公开(公告)号：US20100055422A1

公开(公告)日：2010-03-04

申请号：US12200841

申请日：2008-08-28

Applicant: Bob Kong ,  Zhi-Wen Sun ,  Igor Ivanov ,  Jinhong Tong

Inventor： Bob Kong ,  Zhi-Wen Sun ,  Igor Ivanov ,  Jinhong Tong

IPC: B32B3/10 ,  C23C18/44 ,  H01L21/44

CPC classification number: C23C18/44 ,  C23C18/1605 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1844 ,  H01L21/02068 ,  H01L21/0332 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/7687 ,  H01L27/1052 ,  H01L28/65 ,  Y10T428/12493 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/24917

Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.

Abstract translation: 本发明的实施方案描述了使用自引发的无电镀方法在铂膜上选择性镀铂的方法。 特别地，铂膜被镀在厚度小于300埃的非常薄的铜膜上。 还描述了化学镀溶液和所得结构。 该方法在逻辑器件，存储器件和光伏器件的半导体处理中具有应用。

公开(公告)号：US20050274622A1

公开(公告)日：2005-12-15

申请号：US11012965

申请日：2004-12-15

Applicant: Zhi-Wen Sun ,  Renren He ,  Nicolay Kovarsky ,  You Wang

Inventor： Zhi-Wen Sun ,  Renren He ,  Nicolay Kovarsky ,  You Wang

IPC: C25D3/00 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC classification number: H01L21/76873 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76864

Abstract: Embodiments of a method of copper plating a substrate surface with a group VIII metal layer have been described. In one embodiment, a method of plating copper on a substrate surface with a group VIII metal layer comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating the substrate in a copper plating solution comprising about 50 g/l to about 300 g/l of sulfuric acid at an initial plating current higher than the critical current density to deposit a continuous copper layer on the substrate surface. The Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.

Abstract translation: 已经描述了用VIII族金属层对基板表面进行镀铜的方法的实施例。 在一个实施例中，在基板表面上用第VIII族金属层电镀铜的方法包括通过去除第VIII族金属表面氧化物层和/或表面污染物并将该基板镀在包括 约50g / l至约300g / l的硫酸，其初始电镀电流高于临界电流密度，以在衬底表面上沉积连续的铜层。 通过在含酸浴中进行阴极处理，或通过在含酸浴中进行阴极处理，可以通过在具有含氢气体环境和/或非反应性气体的Ru的环境中对基底进行退火来实现基底的预处理 将基板浸入含酸浴中。

公开(公告)号：US06852242B2

公开(公告)日：2005-02-08

申请号：US09792444

申请日：2001-02-23

Applicant: Zhi-Wen Sun ,  Anbei Jiang ,  Tuo-Chuan Huang

Inventor： Zhi-Wen Sun ,  Anbei Jiang ,  Tuo-Chuan Huang

IPC: B08B7/00 ,  C03C15/00 ,  C23C16/44 ,  C23F1/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

CPC classification number: H01L21/02046 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32935

Abstract: A substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas. A controller operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2 to CF4 of from about 1:1 to about 1:40.

Abstract translation: 基板处理装置具有具有基板输送的基板输送基板到室内的基板支撑体上的气室，在该室内提供气体的气体供给器，对该气体进行通电的气体增压器以及排出气体的排气 。 控制器操作衬底支撑件，气体供应器，气体激发器和气体排出中的一个或多个，以在腔室中设置蚀刻工艺条件以蚀刻多个衬底，由此在腔室中的表面上沉积蚀刻剂残留物。 控制器还操作一个或多个衬底支撑件，气体供应器，气体激励器和气体排出器，以设置腔室中的清洁工艺条件以清洁蚀刻剂残留物。 清洗过程条件包括O2至CF4的体积流量比为约1:1至约1:40。

公开(公告)号：US06808611B2

公开(公告)日：2004-10-26

申请号：US10187734

申请日：2002-06-27

Applicant: Zhi-wen Sun ,  Chunman Yu ,  Brian Metzger ,  David W. Nguyen ,  Girish Dixit

Inventor： Zhi-wen Sun ,  Chunman Yu ,  Brian Metzger ,  David W. Nguyen ,  Girish Dixit

IPC: C25D2100

CPC classification number: C25D21/12 ,  G01N27/42 ,  G01N27/49 ,  G01N31/164

Abstract: Embodiments of the invention provide an electro-analytical method for determining the concentration of an organic additive in an acidic or basic metal plating bath using an organic chemical analyzer. The method includes preparing a supporting-electrolyte solution, preparing a testing solution including the supporting-electrolyte solution and a standard solution, measuring an electrochemical response of the supporting-electrolyte solution using the organic chemical analyzer, and implementing an electro-analytical technique to determine the concentration of the organic additive in the plating bath from the electrochemical response measurements. The method is performed for independently analyzing one organic additive component in a plating bath containing multi-component organic additives, regardless of knowledge of the concentration of other organic additives and with minimal interference among organic additives.